HGTP12N60C3D

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns • 24A, 600V at TC = 25oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. E C G COLLECTOR (FLANGE) Formerly Developmental Type TA49182. Ordering Information PART NUMBER PACKAGE BRAND HGTP12N60C3D TO-220AB 12N60C3D HGT1S12N60C3DS TO-263AB 12N60C3D JEDEC TO-263AB COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263 variant in Tape and Reel, i.e., HGT1S12N60C3DS9A. G E Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTP12N60C3D, HGT1S12N60C3DS Rev. B HGTP12N60C3D, HGT1S12N60C3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 24 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) 12 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 96 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 24A at 600V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 104 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 4 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 13 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL Collector to Emitter Breakdown Voltage BVCES Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage MIN TYP MAX UNITS 600 - - V - - 250 µA - - 2.0 mA - 1.65 2.0 V - 1.85 2.2 V - 1.80 2.2 V - 2.0 2.4 V 3.0 5.0 6.0 V - - ±100 nA VCE(PK) = 480V 80 - - A VCE(PK) = 600V 24 - - A IC = IC110, VCE = 0.5 BVCES - 7.6 - V Qg(ON) IC = IC110, VCE = 0.5 BVCES VGE = 15V - 48 55 nC VGE = 20V - 62 71 nC td(ON)I TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25Ω, - 28 - ns - 20 - ns - 270 400 ns - 210 275 ns ICES VCE(SAT) TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES IC = IC110, VGE = 15V IC = 15A, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time VGEP tri td(OFF)I Current Fall Time tfi Turn-On Energy EON - 380 - µJ Turn-Off Energy (Note 3) EOFF - 900 - µJ Diode Forward Voltage VEC - 1.7 2.1 V ©2001 Fairchild Semiconductor Corporation L = 100µH IEC = 12A HGTP12N60C3D, HGT1S12N60C3DS Rev. B HGTP12N60C3D, HGT1S12N60C3DS Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Diode Reverse Recovery Time TEST CONDITIONS trr Thermal Resistance RθJC MIN TYP MAX UNITS IEC = 12A, dIEC/dt = 200A/µs - 32 40 ns IEC = 1.0A, dIEC/dt = 200A/µs - 23 30 ns IGBT - - 1.2 oC/W Diode - - 1.9 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending at the point where the collector current equals zero (I CE = 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. 80 DUTY CYCLE