HUF76629D3ST

N-Channel Logic Level UltraFET® Power MOSFET 100V, 20A, 52mΩ D Features „ Typ rDS(on) = 41mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 39nC at VGS = 10V, ID = 20A G „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 S Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 100 Units V ±16 V Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 20 Pulsed Drain Current TC = 25°C See Figure4 Single Pulse Avalanche Energy (Note 2) 231 A mJ Power Dissipation 150 W Derate above 25oC 1 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient -55 to + 175 oC 1 oC/W 52 oC/W (Note 3) Package Marking and Ordering Information Device Marking HUF76629D3ST Device HUF76629D3ST-F085 Package D-PAK(TO-252) Reel Size 13” Tape Width 12mm Quantity 2500 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 1.8mH, IAS = 16A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2013 Semiconductor Components Industries, LLC August-2017, Rev. 3 Publication Order number: HUF76629D3ST-F085/D HUF76629D3ST-F085 N-Channel Logic Level UltraFET ® Power MOSFET HUF76629D3ST-F085 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 100V, VGS = 0V 100 - - V - - 1 μA TJ = 25oC TJ = 175oC(Note 4) - - 1 mA - - ±100 nA 1.0 1.6 3.0 V - 41 52 mΩ - 102 128 mΩ 47 55 mΩ 115 135 mΩ VGS = ±16V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 20A, VGS= 10V TJ = 25oC ID = 20A, VGS= 4.5V TJ = 25oC TJ = 175oC(Note 4) TJ = 175oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge - VDS = 25V, VGS = 0V, f = 1MHz VDD = 50V ID = 20A - 1280 - pF - 214 - pF - 33 - pF - 2.5 - Ω - 39 43 nC - 2.3 3 nC - 3.5 - nC 11 - nC Switching Characteristics ton Turn-On Time - - 27 ns td(on) Turn-On Delay Time - 7 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff - 12 - ns - 38 - ns Fall Time - 5 - ns Turn-Off Time - - 47 ns V VDD = 50V, ID = 20A, VGS = 10V, RGEN = 8.2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage Trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 20A, VGS = 0V - - 1.25 ISD = 10A, VGS = 0V - - 1.0 V IF = 20A, dISD/dt = 100A/μs, VDD=80V - 77 99 ns - 221 305 nC Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 HUF76629D3ST-F085 N-Channel Logic Level UltraFET ® Power MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 25 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) NORMALIZED THERMAL IMPEDANCE, ZθJC VGS = 10V 15 VGS = 4.5V 10 5 0 25 175 Figure 1. Normalized Power Dissipation vs Case Temperature 20 50 75 100 125 TC, CASE TEMPERATURE(oC) 150 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 IDM, PEAK CURRENT (A) VGS = 10V TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 175 - TC I = I2 150 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 HUF76629D3ST-F085 N-Channel Logic Level UltraFET ® Power MOSFET Typical Characteristics 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 100us 10 1ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 10ms 100ms 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.001 300 Figure 5. Forward Bias Safe Operating Area If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to On Semiconductor Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 100 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 40 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 VDD = 5V 30 TJ = 175oC 20 TJ = 25oC TJ = -55oC 10 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 10 TJ = 175 oC TJ = 25 oC 1 0.1 0.2 5 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 80 50 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 0 V 60 VGS 10V Top 8V 6V 5V 4.5V 4V Bottom 40 20 80μs PULSE WIDTH Tj=25oC 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics 5 40 30 VGS 10V Top 8V 6V 5V 4.5V 4V Bottom 20 10 0 0 80μs PULSE WIDTH Tj=175oC 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 5 HUF76629D3ST-F085 N-Channel Logic Level UltraFET ® Power MOSFET Typical Characteristics ID = 20A 3.0 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 200 2.4 150 TJ = 175oC 1.8 100 1.2 50 0.6 TJ = 25oC 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. Rdson vs Gate Voltage 80 120 160 -40 0 40 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized Rdson vs Junction Temperature 1.2 1.2 ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250μA 1.1 1.0 1.0 0.8 0.9 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) Figure 13. Normalized Gate Threshold Voltage vs Temperature 10000 Ciss 1000 Coss 100 f = 1MHz VGS = 0V 10 0.1 0.8 -80 200 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 10 100 Figure 15. Capacitance vs Drain to Source Voltage -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) NORMALIZED GATE THRESHOLD VOLTAGE ID = 20A VGS = 10V 0.0 -80 1.4 CAPACITANCE (pF) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX ID = 20A 8 VDD = 40V 6 VDD = 50V VDD = 60V 4 2 0 0 10 20 30 Qg, GATE CHARGE(nC) 40 Figure 16. Gate Charge vs Gate to Source Voltage www.onsemi.com 5 HUF76629D3ST-F085 N-Channel Logic Level UltraFET ® Power MOSFET Typical Characteristics HUF76629D3ST-F085 N-Channel Logic Level UltraFET ® Power MOSFET ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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