J176-D74Z

Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. G TO-92 12 1 3 Straight Lead Bulk Packing 2 1. Drain 2. Gate 3. Source 3 S SOT-23 D Mark: 6W / 6X / 6Y Note: Source & drain are interchangeable. Bent Lead Tape & Reel Ammo Packing Figure 1. J175 / J176 Device Package Figure 2. MMBFJ175 / 176 / 177 Device Package Ordering Information Part Number Marking Package Packing Method J175-D26Z J175 TO-92 3L Tape and Reel J176-D74Z J176 TO-92 3L Ammo MMBFJ175 6W SOT-23 3L Tape and Reel MMBFJ176 6X SOT-23 3L Tape and Reel MMBFJ177 6Y SOT-23 3L Tape and Reel ©1997 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: J175/D J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Parameter Symbol Value Unit VDG Drain-Gate Voltage -30 V VGS Gate-Source Voltage 30 V IGF Forward Gate Current 50 mA -55 to + 150 °C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Max. Symbol PD Parameter Total Device Dissipation J175 / J176 (3) MMBFJ175 / MMBFJ176 / MMBFJ177 (3) Unit 350 225 mW 1.8 mW/°C Derate Above 25°C 2.8 RθJC Thermal Resistance, Junction to Case 125 RθJA Thermal Resistance, Junction to Ambient 357 °C/W 556 °C/W Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2 J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Absolute Maximum Ratings(1),(2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0 Gate Reverse Current VGS = 20 V, VDS = 0 Gate-Source Cut-Off Voltage 30 V 1.0 J175 / MMBFJ175 3.0 6.0 VDS = -15 V, ID = -10 nA J176 / MMBFJ176 1.0 4.0 MMBFJ177 0.8 2.5 J175 / MMBFJ175 -7.0 -60.0 J176 / MMBFJ176 -2.0 -25.0 MMBFJ177 -1.5 -20.0 nA V On Characteristics IDSS rDS(on) Zero-Gate Voltage Drain Current(4) VDS = -15 V, IGS = 0 Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0 Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 3 J175 / MMBFJ175 125 J176 / MMBFJ176 250 MMBFJ177 300 mA Ω J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Electrical Characteristics - TRANSCONDUCTANCE (mmhos) V GS = 0 V -12 1.0 V 1.5 V -8 -4 2.5 V 3.0 V 3.5 V 0 0 -1 -2 -3 -4 VDS - DRAIN-SOURCE VOLTAGE (V) -5 100 50 I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ -100 mV, VGS = 0 V GS(off) @ V DS = - 15V, I D = - 1.0 μA 1 1 V GS (OFF) 16 - DRAIN CURRENT (mA) V GS(off) = - 4.5 V -24 - 55°C 25°C 125°C VGS(off) = 2.5 V -16 - 55°C 25°C 125°C VGS(off) = - 4.5 V - 55°C 25°C 125°C VGS(off) = 2.5 V 12 8 - 55°C 25°C 125°C 4 D -8 V DS = - 15 V I I D - DRAIN CURRENT (mA) 10 2 5 10 - GATE CUTOFF VOLTAGE (V) Figure 4. Parameter Interactions V DS = - 15 V 0 0 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) 0 4 0 10 g os - OUTPUT CONDUCTANCE ( μ mhos) 20 4 1000 100 50 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) Figure 6. Transfer Characteristics Figure 5. Transfer Characteristics - NORMALIZED RESISTANCE ( Ω ) fs 5 -32 V GS(off) @ 5.0V, 10 μA r DS r DS = V GS 1 -________ V GS(off) 5 2 DS g 10 Figure 3. Common Drain-Source r 500 I DSS r DS fs I D 2.0 V 50 g - DRAIN CURRENT (mA) 0.5 V 1,000 - DRAIN "ON" RESISTANCE (Ω Ω) -16 100 DS T A = 25°C TYP V GS(off) = 4.5 V r -20 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) Figure 7. Normalized Drain Resistance vs. Bias Voltage f = 1.0 kHz -5.0V 100 -5.0V -10V V GS(off) = - 4.5V -20V -20V -10V 10 V GS(off) = - 2.5V _ 1 0.01 _ _ 0.1 1 I D - DRAIN CURRENT (mA) _ 10 Figure 8. Output Conductance vs. Drain Current www.onsemi.com 4 J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Typical Performance Characteristics C is (C rs ) - CAPACITANCE (pF) g fs - TRANSCONDUCTANCE (mmhos) 100 10 V GS(off) = 2.5V 5 25°C V GS(off) = 6.0V - 55°C 25°C 125°C 1 0.5 V DG = -15V f = 1.0 kHz 0.1 _ 0.1 _ _ 1 10 I D - DRAIN CURRENT (mA) _ f = 0.1 - 1.0 MHz C is (V DS = -15V) 10 5 100 1 C rs (V DS = -15V) 0 r DS - DRAIN "ON" RESISTANCE (Ω) e n - NOISE VOLTAGE (nV / √ Hz) 50 I D = - 0.2 mA 10 I D = 5.0 mA 5 V DG = - 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f ≥ 1.0 kHz 1 0.01 0.1 1 10 f - FREQUENCY (kHz) PD - POWER DISSIPATION (mW) 1000 100 350 300 TO-92 200 150 SOT-23 100 50 0 0 25 50 75 100 o TEMPERATURE ( C) 125 500 V DS = -100 mV V GS(off) = 2.5V V GS = 0 V GS(off) = 4.5V V GS(off) = 8.0V 100 50 10 -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( o C) Figure 12. Channel Resistance vs. Temperature Figure 11. Noise Voltage vs. Frequency 250 20 Figure 10. Capacitance vs. Voltage Figure 9. Transconductance vs. Drain Current 100 4 8 12 16 V GS - GATE-SOURCE VOLTAGE (V) 150 Figure 13. Power Dissipation vs. Ambient Temperature www.onsemi.com 5 J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Typical Performance Characteristics (Continued) J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Physical Dimensions Figure 14. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form www.onsemi.com 6 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 SCALE: 2X Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE www.onsemi.com 7 J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Physical Dimensions (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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