KSA1281YTA

KSA1281 PNP Epitaxial Silicon Transistor Features • Audio Power Amplifier • 3 W Output Application www.onsemi.com ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Value Unit Collector−Base Voltage VCBO −50 V Collector−Emitter Voltage VCEO −50 V Emitter−Base Voltage VEBO −5 V Collector Current IC −2 A Junction Temperature TJ 150 °C Storage Temperature TSTG −55 to +150 °C Parameter Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. T 1 2 3 TO−92L CASE 135AM PIN CONNECTIONS 1. Emitter 2. Collector 3. Base ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2001 October, 2018 − Rev. 4 1 Publication Order Number: KSA1281/D KSA1281 THERMAL CHARACTERISTICS (Note 1) Symbol PD Parameter Value Power Dissipation TC = 25°C RqJA Unit 1000 mW Derate Above TA = 25°C 8.0 mW/°C Thermal Resistance, Junction−to−Ambient 125 °C/W 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. ELECTRICAL CHARACTERISTICS (Note 2) Values are at TA = 25°C unless otherwise noted. Symbol Conditions Min BVCBO Collector−Base Breakdown Voltage Parameter IC = −1 mA, IE = 0 −50 Typ V BVCEO Collector−Emitter Breakdown Voltage IC = −10 mA, IB = 0 −50 V BVEBO Emitter−Base Breakdown Voltage IE = −1 mA, IC = 0 −5 V ICBO Collector Cut−Off Current VCB = −50 V, IE = 0 IEBO Emitter Cut−Off Current hFE1 DC Current Gain VEB = −5 V, IC = 0 hFE2 VCE = −2 V, IC = −500 mA 120 VCE = −2 V, IC = −1.5 A 40 Max Unit −100 nA −100 nA 240 VBE(sat) Base−Emitter Saturation Voltage IC = −1 A, IB = −0.05 A −1.2 V VCE(sat) Collector−Emitter Saturation Voltage IC = −1 A, IB = −0.05 A −0.5 V Cob fT Output Capacitance Current Gain Bandwidth Product VCB = −10 V, IE = 0, f = 1 MHz 40 pF VCE = −2 V, IC = −500 mA 100 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2.0%. ORDERING INFORMATION Part Number Top Mark Package Packing Method KSA1281YTA A1281 Y− TO−92 3L Ammo www.onsemi.com 2 KSA1281 VBE(sat), V CE(sat)[V], SATURATION VOLTAGE Typical Performance Characteristics −1400 IC [mA], COLLECTOR CURRENT IB = −7mA −1200 IB = −6mA −1000 IB = −5mA −800 IB = −4mA −600 IB = −3mA −400 IB = −2mA −200 IB = −1mA 0 0 −2 −4 −6 −8 −10 −12 −14 −16 1 IC = 50IB o Ta = 25 C 0.1 0.01 0.001 VCE[V], COLLECTOR−EMITTER VOLTAGE Figure 2. Base−Emitter Saturation Voltage 1 −1400 VCE = −2V −1200 IC [mA], COLLECTOR CURRENT VCE (sat)[V], SATURATION VOLTAGE 10 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic IC = 50IB o Ta = 25 C 0.1 0.01 0.001 1 0.1 0.01 −1000 −800 −600 −400 −200 0 10 0 −0.2 IC[mA], COLLECTOR CURRENT −0.6 −0.8 −1.0 −1.2 −1.4 Figure 4. Base−Emitter On Voltage −10 1.4 IC(MAX)PLUS 1.2 PC [W], POWER DISSIPATION IC(MAX) 1ms −1 1s o Ta=25 C D.C. OPERATION −0.1 VCEOMAX −0.01 −0.4 VBE[V], BASE−EMITTER VOLTAGE Figure 3. Collector−Emitter Saturation Voltage I C [A], COLLECTOR CURRENT 1 0.1 0.01 −0.1 −1 −10 1.0 0.8 0.6 0.4 0.2 0 −100 VCE[V], COLLECTOR−EMITTER VOLTAGE 0 25 50 75 100 125 o 150 Ta[ C], AMBIENT TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating www.onsemi.com 3 175 KSA1281 PACKAGE DIMENSIONS TO−92 3 8.0x4.9 (LEADFORMED) CASE 135AM ISSUE A www.onsemi.com 4 KSA1281 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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