KSA1381ESTU

DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor KSA1381 1. Emitter 2.Collector 3.Base Features • • • • • • • High Voltage: VCEO = −300 V Low Reverse Transfer Capacitance: Cre = 2.3 pF at VCB = −30 V Excellent Gain Linearity for Low THD High Frequency: 150 MHz Full Thermal and Electrical Spice Models are Available Complement to KSC3503 This is a Pb−Free Device TO−126−3LD CASE 340AS MARKING DIAGRAM Applications • Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier $Y&3 A1381E ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Parameter Symbol Ratings Units BVCBO Collector−Base Voltage −300 V BVCEO Collector−Emitter Voltage −300 V BVEBO Emitter−Base Voltage −5 V IC Collector Current (DC) −100 mA ICP Collector Current (Pulse) −200 mA PC Total Device Dissipation, TC=25°C TC = 125°C 7 1.2 W W −55~+150 °C TJ, TSTG Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) ORDERING INFORMATION (Ta = 25°C unless otherwise noted) Parameter Symbol RqJC Thermal Resistance, Junction to Case $Y = Logo &3 = 3−Digit Date Code A1381E = Specific Device Code Max. Units 17.8 °C/W See detailed ordering and shipping information on page 2 of this data sheet. 1. Device mounted on minimum pad size. © Semiconductor Components Industries, LLC, 2008 August, 2022 − Rev. 1 1 Publication Order Number: KSA1381/D KSA1381 ELECTRICAL CHARACTERISTICS (Note 2) (Ta = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit BVCBO Collector−Base Breakdown Voltage IC = −10 mA, IE = 0 −300 − − V BVCEO Collector−Emitter Breakdown Voltage IC = −1 mA, IB = 0 −300 − − V BVEBO Emitter−Base Breakdown Voltage IE = −10 mA, IC = 0 −5 − − V ICBO Collector Cut−off Current VCB = −200 V, IE = 0 − − −0.1 mA IEBO Emitter Cut−off Current VEB = −4 V, IC = 0 − − −0.1 mA hFE DC Current Gain VCE = −10 V, IC = −10 mA 100 − 200 VCE(sat) Collector−Emitter Saturation Voltage IC = −20 mA, IB = −2 mA − − −0.6 V VBE(sat) Base−Emitter Saturation Voltage IC = −20 mA, IB = −2 mA − − −1 V fT Current Gain Bandwidth Product VCE = −30 V, IC = −10 mA − 150 − MHz Cob Output Capacitance VCB = −30 V, f = 1 MHz − 3.1 − pF Cre Reverse Transfer Capacitance VCB = −30 V, f = 1 MHz − 2.3 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2% ORDERING INFORMATION Part Number (Note 3, 4) Marking Package Shipping Remarks KSA1381ESTU A1381E TO−126−3LD (Pb−Free) 1920 Units / Tube HFE1 E Grade 3. Affix “−S−” means the standard TO126 Package.(see package dimensions). If the affix is “−STS−” instead of “−S−”, that mean the short−lead TO126 package. 4. Suffix “−TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method. www.onsemi.com 2 KSA1381 TYPICAL CHARACTERISTICS −10 IB = −140 mA I = −120 mA B −16 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) −20 IB = −100 mA IB = −80 mA −12 IB = −60 mA −8 IB = −40 mA IB = −20 mA −4 −0 −0 IB = 0 mA −2 −4 −6 −8 IB = −60 mA −8 IB = −40 mA −6 IB = −20 mA IB = −10 mA −2 −0 −0 −10 −60 −80 −100 −10 100 −1 −1 VBE(sat) −0.1 VCE(sat) −0.01 −0.1 −100 −10 IC = 10 IB VBE(sat), VCE(sat), SATURATION VOLTAGE (V) VCE = −10 V IC, COLLECTOR CURRENT (mA) −1 −10 −100 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain Figure 4. Base−Emitter Saturation Voltage Collector−Emitter Saturation Voltage 1000 −160 IC, COLLECTOR CURRENT (mA) fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) −40 Figure 2. Static Characteristic 1000 VCE = −30 V 100 10 1 −0.1 IB = 0 mA −20 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Static Characteristic hFE, DC CURRENT GAIN IB = −30 mA −4 VCE, COLLECTOR−EMITTER VOLTAGE (V) 10 −0.1 IB = −50 mA −1 −10 −100 −120 −100 −80 −60 −40 −20 −0 −0.0 −1000 IC, COLLECTOR CURRENT (mA) VCE = −10 V −140 −0.2 −0.4 −0.6 −0.8 −1.0 VBE, BASE−EMITTER VOLTAGE (V) Figure 5. Current Gain Bandwidth Product Figure 6. Base−Emitter On Voltage www.onsemi.com 3 −1.2 KSA1381 TYPICAL CHARACTERISTICS (Continued) 100 IE = 0 f = 1 MHz Cre, CAPACITANCE (pF) Cob, CAPACITANCE (pF) 100 10 1 0.1 −0.1 −1 −10 −100 f = 1 MHz 10 1 0.1 −0.1 −1000 VCB, COLLECTOR−BASE VOLTAGE (V) −1000 −100 Figure 8. Reverse Transfer Capacitance 1000 8 PC, POWER DISSIPATION (W) IC, COLLECTOR CURRENT (mA) −10 VCB, COLLECTOR−BASE VOLTAGE (V) Figure 7. Collector Output Capacitance IC MAX. (Pulse) IC MAX. 100 500 ms 1 ms 10 ms DC (TC = 125°C) 10 1 −1 DC (Ta = 25°C) 1 10 100 7 6 5 3 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) TC = 125°C 1 0 1000 TC = 25°C 4 0 25 50 75 100 125 T, TEMPERATURE (°C) Figure 9. Safe Operating Area Figure 10. Power Derating www.onsemi.com 4 150 175 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−126−3LD CASE 340AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13817G TO−126−3LD DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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