KSC1008CYTA

NPN Epitaxial Silicon Transistor KSC1008 Features • • • • • • • Low−Frequency Amplifier Medium Speed Switching High Collector−Base Voltage: VCBO = 80 V Collector Current: IC = 700 mA Suffix “−C” means Center Collector (1. Emitter 2. Collector 3. Base) Non Suffix “−C” means Side Collector (1. Emitter 2. Base 3. Collector) Complement to KSA708 These are Pb−Free Devices www.onsemi.com TO−92−3 CASE 135AN 12 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Symbol Value Unit VCBO Collector−Base Voltage Parameter 80 V VCEO Collector−Emitter Voltage 60 V VEBO Emitter−Base Voltage 8 V IC Collector Current 700 mA TJ Junction Temperature 150 _C TSTG Storage Temperature −55 to 150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TO−92−3 LF CASE 135AR 1 2 3 KSC1008: KSC1008C: MARKING DIAGRAM AC1 008X YWW THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) (Note 1) Value Unit Power Dissipation Parameter 800 mW Derate Above 25_C 6.4 mW/_C Thermal Resistance, Junction−to−Ambient 156 _C/W Symbol PD RθJA 1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. 1. Emitter 2. Base 3. Collector 1. Emitter 2. Collector 3. Base A C1008 X YWW = Assembly Code = Device Code = O/Y/YC/G = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2001 August, 2021 − Rev. 2 1 Publication Order Number: KSC1008/D KSC1008 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Conditions Min Typ Max Unit BVCBO Collector−Base Breakdown Voltage IC = 100 mA, IE = 0 80 − − V BVCEO Collector−Emitter Breakdown Voltage IC = 10 mA, IB = 0 60 − − V BVEBO Emitter−Base Breakdown Voltage IE = 10 mA, IC = 0 8 − − V ICBO Collector Cut−Off Current VCB = 60 V, IE = 0 − − 0.1 mA IEBO Emitter Cut−Off Current VEB = 5 V, IC = 0 − − 0.1 mA hFE DC Current Gain VCE = 2 V, IC = 50 mA 40 − 400 VCE(sat) Collector−Emitter Saturation Voltage IC = 500 mA, IB = 50 mA − 0.2 0.4 V VBE(sat) Base−Emitter Saturation Voltage IC = 500 mA, IB = 50 mA − 0.86 1.10 V fT Current Gain Bandwidth Product VCE = 10 V, IC = 50 mA 30 50 − MHz Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz − 8 − pF Cob Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. hFE Classification Classification O Y G hFE 70 ~ 140 120 ~ 240 200 ~ 400 ORDERING INFORMATION (Note 2) Top Mark Package Shipping KSC1008OBU Part Number C1008 O− 10000 / Bulk Bag KSC1008YBU C1008 Y− TO−92−3 (Pb−Free) KSC1008YTA C1008 Y− 2000 / Fan−Fold KSC1008CYTA C1008 YC TO−92−3 LR (Pb−Free) KSC1008GTA C1008 G− 10000 / Bulk Bag 2000 / Fan−Fold 2000 / Fan−Fold 2. Affix “−C−” means center collector pin. Affix “−O−, −Y−, −G−” means hFE classification. Suffix “−BU” means bulk packing, straight lead form. Suffix “−TA” means tape and ammo packing, 0.200 in−line spacing lead form. www.onsemi.com 2 KSC1008 TYPICAL PERFORMANCE CHARACTERISTICS IB = 1.8 mA IB = 1.6 mA 180 160 IB = 1.4 mA 140 IB = 1.2 mA 120 IB = 1.0 mA 100 IB = 0.8 mA 80 60 IB = 0.6 mA 40 IB = 0.4 mA 20 IB = 0.2 mA 0 hFE, DC Current Gain IC, Collector Current (mA) 200 0 5 10 15 20 25 30 35 40 45 50 240 220 200 180 160 140 120 100 80 60 40 20 0 VCE = 2 V 1 Figure 1. Static Characteristic Figure 2. DC Current Gain VCE = 2 V IC, Collector Current (mA) VBE(sat), VCE(sat), Saturation Voltage (V) VBE(sat) 1 0.1 VCE(sat) 1 10 100 100 10 1 0.0 1000 IC, Collector Current (mA) 0.4 0.6 0.8 1.0 Figure 4. Base−Emitter On Voltage 100 f = 1 MHz IE = 0 10 1 0.2 VBE, Base−Emitter Voltage (V) Figure 3. Base−Emitter Saturation Voltage and Collector−Emitter Saturation Voltage Cob, Capacitance (pF) 1000 1000 IC = 10 IB 1 100 IC, Collector Current (mA) 10 0.01 10 VCE, Collector−Emitter Voltage (V) 10 100 VCB, Collector−Base Voltage (V) Figure 5. Collector Output Capacitance www.onsemi.com 3 1.2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.825x4.76 CASE 135AN ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13880G TO−92 3 4.825X4.76 DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13879G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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