KSC1815YTA

NPN Epitaxial Silicon Transistor KSC1815 Features • • • • Audio Frequency Amplifier and High−Frequency OSC Complement to KSA1015 Collector−Base Voltage: VCBO = 50 V This is a Pb−Free Device www.onsemi.com MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage 60 V VCEO Collector−Emitter Voltage 50 V VEBO Emitter−Base Voltage 5 V 150 mA IC Collector Current IB Base Current 50 mA TJ Junction Temperature 150 °C −55 to 150 °C TSTG Storage Temperature Range 1 1. Emitter 2. Collector 3. Base 2 3 TO−92 3 4.83x4.76 LEADFORMED CASE 135AR MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AC1 815X YWW THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) (Note 1) Symbol PD RqJA Parameter Max. Unit Total Device Dissipation 400 mW Derate Above 25°C 3.2 mW/°C Thermal Resistance, Junction to Ambient 312 °C/W 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. A C1815 X YWW = Assembly Code = Device Code = O / Y / GR / L = Date Code ORDERING INFORMATION © Semiconductor Components Industries, LLC, 1999 June, 2021 − Rev. 2 1 Device Package Shipping KSC1815YTA TO−92 3L (Pb−Free) 2000 / Fan−Fold Publication Order Number: KSC1815/D KSC1815 ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter BVCBO Collector−Base Voltage IC = 1 mA, IE = 0 60 V BVCEO Collector−Emitter Voltage IC = 10 mA, IB = 0 50 V BVEBO Emitter−Base Voltage IE = 10 mA, IC = 0 5 V ICBO Collector Cut−Off Current VCB = 60 V, IE = 0 0.1 mA IEBO Emitter Cut−Off Current VEB = 5 V, IC = 0 0.1 mA VCE(sat) Collector−Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.25 V VBE(sat) Base−Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 1.0 V DC Current Gain VCE = 6 V, IC = 2 mA 70 VCE = 6 V, IC = 150 mA 25 Current Gain Bandwidth Product VCE = 10 V, IC = 1 mA 80 Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 2.0 3.0 pF NF Noise Figure VCE = 6 V, IC = 0.1 mA, RS = 10 kW, f = 1 kHz 1.0 10.0 dB hFE1 Conditions hFE2 fT Min Typ 0.10 Max Unit 700 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. hFE CLASSIFICATION Classification O Y GR L HFE1 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 www.onsemi.com 2 KSC1815 TYPICAL PERFORMANCE CHARACTERISTICS 100 IB = 400 mA IB = 350 mA 80 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 100 IB = 300 mA IB = 250 mA 60 IB = 200 mA IB = 150 mA 40 IB = 100 mA 20 IB = 50 mA 0 0 4 8 12 16 VCE = 6 V 10 1 0.1 0.0 20 Figure 1. Static Characteristic 100 VCE (sat) 100 1 1 100 1000 fT, CURRENT GAIN−BANDWIDTH PRODUCT (MHz) Cob, CAPACITANCE (pF) 100 1000 Figure 4. Base−Emitter Saturation Voltage and Collector−Emitter Saturation Voltage 10 10 10 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 1 1.2 VBE (sat) 1000 10 1000 Figure 3. DC Current Gain 0.1 1.0 IC = 10 IB IC, COLLECTOR CURRENT (mA) 100 0.8 10000 VBE(sat), VCE(sat), SATURATION VOLTAGE (mV) hFE, DC CURRENT GAIN 1000 10 0.6 Figure 2. Static Characteristic VCE = 6 V 1 0.4 VBE, BASE−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) 10 0.2 VCE = 6 V 100 10 1 1000 0 VCB, COLLECTOR−BASE VOLTAGE (V) 1 10 IC, COLLECTOR CURRENT (mA) Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product www.onsemi.com 3 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13879G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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