KSC2383YTA

KSC2383 — NPN Epitaxial Silicon Transistor KSC2383 NPN Epitaxial Silicon Transistor 1 TO-92L 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383 Y- TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1 A IB Base Current 0.5 A TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C © 2002 Semiconductor Components Industries, LLC. October-2017,Rev.2 Publication Order Number: KSC2383/D Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 900 mW Derate Above 25°C 7.2 mW/°C Thermal Resistance, Junction-to-Ambient 138 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit ICBO Collector Cut-Off Current VCB = 150 V, IE = 0 1 μA IEBO Emitter Cut-Off Current VEB = 6 V, IC = 0 1 μA Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 160 DC Current Gain VCE = 5 V, IC = 200 mA 60 320 VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 1.5 V VBE(on) Base-Emitter On Voltage VCE = 5 V, IC = 5 mA 0.45 0.75 V Current Gain Bandwidth Product VCE = 5 V, IC = 200 mA Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz BVCEO hFE fT Cob 20 V 100 MHz 20 hFE Classification Classification R O Y hFE 60 ~ 120 100 ~ 200 160 ~ 320 www.onsemi.com 2 pF KSC2383 — NPN Epitaxial Silicon Transistor Thermal Characteristics(1) 1000 EMITTER COMMON o Ta=25 C 1.2 IB = 15mA EMITTER COMMON IB = 10mA 1.0 hFE, DC CURRENT GAIN Ic[mA], COLLECTOR CURRENT 1.4 IB = 6mA 0.8 IB = 4mA IB = 3mA 0.6 IB = 2.5mA 0.4 IB = 2mA IB = 1.5mA IB = 1mA 0.2 VCE=10V 100 VCE=5V 10 IB = 0.5mA 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 1.4 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. DC Current Gain 1000 EMITTER COMMON o hFE, DC CURRENT GAIN Ta = 25 C VCE=10V 100 VCE=5V VCE=1V 10 1 EMITTER COMMON o Ta = 25 C 0.1 IC/IB=10 IC/IB=5 0.01 1E-3 1 1000 IC[mA], COLLECTOR CURRENT 10 1000 Figure 4. Collector-Emitter Saturation Voltage 1.0 1000 EMITTER COMMON f = 1MHz EMITTER COMMON IC/IB=10 o 0.8 Ta = 25 C Cob[pF], CAPACITANCE IC[A], COLLECTOR CURRENT 100 IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain 0.6 0.4 0.2 0.0 0.0 1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic 100 100 100 10 1 0.2 0.4 0.6 0.8 1.0 1 10 100 1000 VCB[V], COLLECTOR BASE VOLTAGE VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance www.onsemi.com 3 KSC2383 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics EMITTER COMMON IC MAX. (Pulse) o s MA X. =1 A 0.1 DC Ta =2 5 o C VCEO MAX. 10 IC s 100 10 0m s 1 1m IC[A], COLLECTOR CURRENT Ta = 25 C m 10 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 10 1000 0.01 1E-3 1 1 10 100 1 1000 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area www.onsemi.com 4 1000 KSC2383 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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