KSP42BU

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KSP42 / KSP43 NPN Epitaxial Silicon Transistor Features • Collector-Emitter Voltage: VCEO = KSP42: 300 V KSP43: 200 V • Collector Dissipation: PC (max.) = 625 mW TO-92 12 3 Straight Lead Bulk Packing 1 2 1. Emitter 2. Base 3. Collector 3 Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method KSP42BU KSP42 TO-92 3L Bulk KSP42TA KSP42 TO-92 3L Ammo KSP43BU KSP43 TO-92 3L Bulk KSP43TA KSP43 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Value KSP42 300 KSP43 200 KSP42 300 KSP43 200 Unit V V 6 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C © 2002 Fairchild Semiconductor Corporation KSP42 / KSP43 Rev. 1.4 www.fairchildsemi.com KSP42 / KSP43 — NPN Epitaxial Silicon Transistor September 2015 Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions KSP42 BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage(1) BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain(1) KSP43 KSP42 KSP43 300 V 200 6 V KSP43 VCB = 160 V, IE = 0 100 KSP42 VEB = 6 V, IC = 0 100 KSP43 VEB = 4 V, IC = 0 100 Collector-Emitter Saturation Voltage (1) KSP42 KSP43 Current Gain Bandwidth Product VCE = 10 V, IC = 1 mA 25 VCE = 10 V, IC = 10 mA 40 VCE = 10 V, IC = 30 mA 40 Unit V 100 Base-Emitter Saturation Voltage(1) fT IE = 100 μA, IC = 0 300 200 VCB = 200 V, IE = 0 VBE(sat) Output Capacitance IC = 1 mA, IB = 0 Max. KSP42 VCE(sat) Cob IC = 100 μA, IE = 0 Min. nA nA IC = 20 mA, IB = 2 mA 0.5 V IC = 20 mA, IB = 2 mA 0.9 V 3 VCB = 20 V, IE = 0, f = 1 MHz VCE = 20 V, IC = 10 mA, f = 100 MHz 4 50 pF MHz Note: 1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 2002 Fairchild Semiconductor Corporation KSP42 / KSP43 Rev. 1.4 www.fairchildsemi.com 2 KSP42 / KSP43 — NPN Epitaxial Silicon Transistor Electrical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN 1000 VCE = 10V 100 10 1 10 10 IC = 10 IB VBE(sat) 1 VCE(sat) 0.1 0.01 1 100 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage and Base-Emitter Saturation Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 100 Ccb [pF], CAPACITANCE IE = 0 f = 1MHz 10 1 0.1 1 10 100 VCE = 20V 80 60 40 20 0 1 100 10 100 IC[mA], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Base Capacitance © 2002 Fairchild Semiconductor Corporation KSP42 / KSP43 Rev. 1.4 120 Figure 4. Current Gain Bandwidth Product www.fairchildsemi.com 3 KSP42 / KSP43 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics KSP42 / KSP43 — NPN Epitaxial Silicon Transistor Physical Dimensions Figure 5. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type © 2002 Fairchild Semiconductor Corporation KSP42 / KSP43 Rev. 1.4 www.fairchildsemi.com 4 KSP42 / KSP43 — NPN Epitaxial Silicon Transistor Physical Dimensions (Continued) Figure 6. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type © 2002 Fairchild Semiconductor Corporation KSP42 / KSP43 Rev. 1.4 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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