LM385BZ-2.5G

LM285, LM385B Micropower Voltage Reference Diodes The LM285/LM385 series are micropower two−terminal bandgap voltage regulator diodes. Designed to operate over a wide current range of 10 mA to 20 mA, these devices feature exceptionally low dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are achieved by on−chip trimming. The large dynamic operating range enables these devices to be used in applications with widely varying supplies with excellent regulation. Extremely low operating current make these devices ideal for micropower circuitry like portable instrumentation, regulators and other analog circuitry where extended battery life is required. The LM285/LM385 series are packaged in a low cost TO−226 plastic case and are available in two voltage versions of 1.235 V and 2.500 V as denoted by the device suffix (see Ordering Information table). The LM285 is specified over a −40°C to +85°C temperature range while the LM385 is rated from 0°C to +70°C. The LM385 is also available in a surface mount plastic package in voltages of 1.235 V and 2.500 V. Features • • • • • • Operating Current from 10 mA to 20 mA 1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades Low Temperature Coefficient 1.0 W Dynamic Impedance Surface Mount Package Available These Devices are Pb−Free and are RoHS Compliant www.onsemi.com MARKING DIAGRAMS 8 1 1 LMy85 Z−xxx ALYWG G TO−92 (TO−226) Z SUFFIX CASE 29 N.C. Cathode Anode xxx = 1.2 or 2.5 y = 2 or 3 z = 1 or 2 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Cathode 10 k 360 k Open for 1.235 V 600 k y85−z ALYW G SOIC−8 D SUFFIX CASE 751 8 (Bottom View) 1 2 3 N.C. 1 8 Cathode N.C. 2 7 N.C. N.C. 3 6 N.C. Anode 4 5 N.C. 8.45 k Standard Application 74.3 k Open for 2.5 V 600 k 1.5 V Battery 425 k 500 W 600 k 100 k + - 3.3 k 1.235 V LM385−1.2 Anode ORDERING INFORMATION Figure 1. Representative Schematic Diagram © Semiconductor Components Industries, LLC, 2016 October, 2016 − Rev. 9 1 See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: LM285/D LM285, LM385B MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Rating Symbol Value Unit Reverse Current IR 30 mA Forward Current IF 10 mA Operating Ambient Temperature Range °C TA LM285 LM385 −40 to +85 0 to +70 Operating Junction Temperature TJ +150 °C Storage Temperature Range Tstg −65 to + 150 °C Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) ESD V 4000 400 2000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) LM285−1.2 Characteristic Symbol Reverse Breakdown Voltage (IRmin v IR v 20 mA) LM285−1.2/LM385B−1.2 TA = Tlow to Thigh (Note 1) LM385−1.2 TA = Tlow to Thigh (Note 1) V(BR)R Minimum Operating Current TA = 25°C TA = Tlow to Thigh (Note 1) Reverse Breakdown Voltage Change with Current IRmin v IR v 1.0 mA, TA = +25°C TA = Tlow to Thigh (Note 1) 1.0 mA v IR v 20 mA, TA = +25°C TA = Tlow to Thigh (Note 1) Reverse Dynamic Impedance IR = 100 mA, TA = +25°C Average Temperature Coefficient 10 mA v IR v 20 mA, TA = Tlow to Thigh (Note 1) Max Min Typ Max 1.223 1.200 − − 1.235 − − − 1.247 1.270 − − 1.223 1.210 1.205 1.192 1.235 − 1.235 − 1.247 1.260 1.260 1.273 − − 8.0 − 10 20 − 8.0 − 15 20 − − − − − − − − 1.0 1.5 10 20 − − − − − − − − 1.0 1.5 20 25 − 0.6 − − 0.6 − − 80 − − 80 − − 60 − − 60 − − 20 − − 20 − 2.462 2.415 − − 2.5 − − − 2.538 2.585 − − 2.462 2.436 2.425 2.400 2.5 − 2.5 − 2.538 2.564 2.575 2.600 − − 13 − 20 30 − − 13 − 20 30 mA mV W DV(BR)/DT S Unit V Z Long Term Stability IR = 100 mA, TA = +25°C ± 0.1°C 1. Tlow Thigh Tlow Thigh Typ DV(BR)R n Minimum Operating Current TA = 25°C TA = Tlow to Thigh (Note 1) Min IRmin Wideband Noise (RMS) IR = 100 mA, 10 Hz v f v 10 kHz Reverse Breakdown Voltage (IRmin v IR v 20 mA) LM285−2.5/LM385B−2.5 TA = Tlow to Thigh (Note 1) LM385−2.5 TA = Tlow to Thigh (Note 1) LM385−1.2/LM385B−1.2 ppm/°C mV ppm/kHR V(BR)R V IRmin = −40°C for LM285−1.2, LM285−2.5 = +85°C for LM285−1.2, LM285−2.5 = 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 = +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 www.onsemi.com 2 mA LM285, LM385B ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) LM285−1.2 Characteristic Symbol Reverse Breakdown Voltage Change with Current IRmin v IR v 1.0 mA, TA = +25°C TA = Tlow to Thigh (Note 2) 1.0 mA v IR v 20 mA, TA = +25°C TA = Tlow to Thigh (Note 2) DV(BR)R Reverse Dynamic Impedance IR = 100 mA, TA = +25°C Average Temperature Coefficient 20 mA v IR v 20 mA, TA = Tlow to Thigh (Note 2) Typ Max Min Typ Max − − − − − − − − 1.0 1.5 10 20 − − − − − − − − 2.0 2.5 20 25 − 0.6 − − 0.6 − − 80 − − 80 − − 120 − − 120 − − 20 − − 20 − W DV(BR)/DT n Long Term Stability IR = 100 mA, TA = +25°C ± 0.1°C S Unit mV Z Wideband Noise (RMS) IR = 100 mA, 10 Hz v f v 10 kHz 2. Tlow Thigh Tlow Thigh LM385−1.2/LM385B−1.2 Min ppm/°C mV ppm/kHR = −40°C for LM285−1.2, LM285−2.5 = +85°C for LM285−1.2, LM285−2.5 = 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 = +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 www.onsemi.com 3 LM285, LM385B ΔV(BR)R, REVERSE VOLTAGE CHANGE (mV) TYPICAL PERFORMANCE CURVES FOR LM285−1.2/385−1.2/385B−1.2 IR, REVERSE CURRENT (A) μ 100 10 TA = +85°C 1.0 +25°C 0.1 0 0.2 -40°C 0.4 0.6 0.8 1.0 V(BR), REVERSE VOLTAGE (V) 1.2 1.4 10 8.0 TA = +85°C 6.0 +25°C 4.0 -40°C 2.0 0 -2.0 0.01 0.1 Figure 2. Reverse Characteristics 1.0 10 IR, REVERSE CURRENT (mA) 100 Figure 3. Reverse Characteristics 1.2 V(BR)R, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 1.250 1.0 TA = -40°C 0.8 0.6 +25°C +85°C 0.4 0.2 0 0.01 1.230 1.220 1.210 0.1 1.0 10 IF, FORWARD CURRENT (mA) IR = 100 mA 1.240 100 -50 Figure 4. Forward Characteristics 1.50 1.25 OUTPUT (V) 750 625 500 125 Input 100 k 1.00 0.75 Output 0.50 DUT 0.25 375 0 250 INPUT (V) √Hz) 100 Figure 5. Temperature Drift 875 e n , NOISE (nV/ -25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 125 0 10 100 1.0K f, FREQUENCY (Hz) 10K 10 5.0 0 100k Figure 6. Noise Voltage 0 0.1 0.2 0.3 0.6 0.7 t, TIME (ms) 0.8 0.9 Figure 7. Response Time www.onsemi.com 4 1.0 1.1 LM285, LM385B ΔV(BR)R, REVERSE VOLTAGE CHANGE (mV) TYPICAL PERFORMANCE CURVES FOR LM285−2.5/385−2.5/385B−2.5 IR, REVERSE CURRENT (A) μ 100 10 TA = +85°C +25°C 1.0 -40°C 0.1 0 0.5 1.0 1.5 2.0 2.5 V(BR), REVERSE VOLTAGE (V) 3.0 3.5 10 TA = +85°C 8.0 6.0 +25°C 2.0 0 -2.0 0.01 0.1 Figure 8. Reverse Characteristics V(BR)R, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 1.0 TA = -40°C 0.8 0.6 +85°C +25°C 0.2 0 0.01 2.520 1.0 10 IF, FORWARD CURRENT (mA) 2.500 2.490 2.480 2.470 2.460 100 -50 Figure 10. Forward Characteristics -25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 100 125 Figure 11. Temperature Drift 3.00 2.50 √Hz) OUTPUT (V) 1500 1250 1000 Input 100 k 2.00 1.50 Output 1.00 DUT 0.50 750 0 500 INPUT (V) e n , NOISE (nV/ 100 IR = 100 mA 2.510 2.450 0.1 1.0 10 IR, REVERSE CURRENT (mA) Figure 9. Reverse Characteristics 1.2 0.4 -40°C 4.0 250 0 10 100 1.0K f, FREQUENCY (Hz) 10K 10 5.0 0 100k Figure 12. Noise Voltage 0 0.1 0.2 0.3 0.6 0.7 t, TIME (ms) 0.8 Figure 13. Response Time www.onsemi.com 5 0.9 1.0 1.1 LM285, LM385B ORDERING INFORMATION Device Operating Temperature Range Reverse Break−Down Voltage LM285D−1.2 LM285D−1.2G 1.235 V LM285D−1.2R2 LM285D−1.2R2G LM285D−2.5 LM285D−2.5G 2.500 V LM285D−2.5R2 LM285D−2.5R2G LM285Z−1.2 LM285Z−1.2G TA = −40°C to +85°C 1.235 V LM285Z−2.5 2.500 V LM285Z−2.5G LM285Z−1.2RA 1.235 V LM285Z−1.2RAG LM285Z−2.5RA LM285Z−2.5RAG 2.500 V LM285Z−2.5RP LM285Z−2.5RPG LM385BD−1.2 LM385BD−1.2G 1.235 V LM385BD−1.2R2 LM385BD−1.2R2G LM385BD−2.5 LM385BD−2.5G LM385BD−2.5R2 TA = 0°C to +70°C 2.500 V LM385BD−2.5R2G LM385BZ−1.2 LM385BZ−1.2G LM385BZ−1.2RA 1.235 V LM385BZ−1.2RAG Package Shipping† SOIC−8 98 Units / Rail SOIC−8 (Pb−Free) 98 Units / Rail SOIC−8 2500 / Tape & Reel SOIC−8 (Pb−Free) 2500 / Tape & Reel SOIC−8 98 Units / Rail SOIC−8 (Pb−Free) 98 Units / Rail SOIC−8 2500 / Tape & Reel SOIC−8 (Pb−Free) 2500 / Tape & Reel TO−92 2000 Units / Bag TO−92 (Pb−Free) 2000 Units / Bag TO−92 2000 Units / Bag TO−92 (Pb−Free) 2000 Units / Bag TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 Units / Fan−Fold TO−92 (Pb−Free) 2000 Units / Fan−Fold SOIC−8 98 Units / Rail SOIC−8 (Pb−Free) 98 Units / Rail SOIC−8 2500 / Tape & Reel SOIC−8 (Pb−Free) 2500 / Tape & Reel SOIC−8 98 Units / Rail SOIC−8 (Pb−Free) 98 Units / Rail SOIC−8 2500 / Tape & Reel SOIC−8 (Pb−Free) 2500 / Tape & Reel TO−92 2000 Units / Bag TO−92 (Pb−Free) 2000 Units / Bag TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 LM285, LM385B ORDERING INFORMATION Device Operating Temperature Range Reverse Break−Down Voltage LM385BZ−2.5 LM385BZ−2.5G 2.500 V LM385BZ−2.5RA LM385BZ−2.5RAG LM385D−1.2 LM385D−1.2G 1.235 V LM385D−1.2R2 LM385D−1.2R2G LM385D−2.5 LM385D−2.5G 2.500 V LM385D−2.5R2 LM385D−2.5R2G TA = 0°C to +70°C LM385Z−1.2 LM385Z−1.2G LM385Z−1.2RA LM385Z−1.2RAG 1.235 V LM385Z−1.2RP LM385Z−1.2RPG LM385Z−2.5 LM385Z−2.5G LM385Z−2.5RP 2.500 V LM385Z−2.5RPG Package Shipping† TO−92 2000 Units / Bag TO−92 (Pb−Free) 2000 Units / Bag TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel SOIC−8 98 Units / Rail SOIC−8 (Pb−Free) 98 Units / Rail SOIC−8 2500 / Tape & Reel SOIC−8 (Pb−Free) 2500 / Tape & Reel SOIC−8 98 Units / Rail SOIC−8 (Pb−Free) 98 Units / Rail SOIC−8 2500 / Tape & Reel SOIC−8 (Pb−Free) 2500 / Tape & Reel TO−92 2000 Units / Bag TO−92 (Pb−Free) 2000 Units / Bag TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Ammo Box TO−92 (Pb−Free) 2000 / Ammo Box TO−92 2000 Units / Bag TO−92 (Pb−Free) 2000 Units / Bag TO−92 2000 / Ammo Box TO−92 (Pb−Free) 2000 / Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 7 LM285, LM385B PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K D X X G J H V C SECTION X−X 1 N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X N www.onsemi.com 8 DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- LM285, LM385B PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 S B 0.25 (0.010) M Y M 1 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S SOLDERING FOOTPRINT* MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 9 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative LM285/D