MGSF1N03LT1G

MGSF1N03L, MVGSF1N03L MOSFET – Single, N-Channel, SOT-23 30 V, 2.1 A These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. www.onsemi.com V(BR)DSS RDS(on) TYP 80 mW @ 10 V 30 V Features N−Channel D Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 2.1 A Continuous Drain Current RqJL Steady State TA = 25°C Power Dissipation RqJL Steady State TA = 25°C PD 0.69 W Continuous Drain Current (Note 1) Steady State TA = 25°C ID 1.6 A Power Dissipation (Note 1) TA = 85°C S MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain 1.5 TA = 85°C TA = 25°C 2.1 A 125 mW @ 4.5 V • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • MV Prefix for Automotive and Other Applications Requiring • ID MAX 1 SOT−23 CASE 318 STYLE 21 1.2 N3 M G G 1 Gate 2 Source PD 0.42 W tp = 10 ms IDM 6.0 A C = 100 pF, RS = 1500 W ESD 125 V TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 2.1 A (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Lead Temperature for Soldering Purposes (1/8” from case for 10 sec) TL 260 °C ORDERING INFORMATION Pulsed Drain Current ESD Capability (Note 3) Operating Junction and Storage Temperature Symbol Max Unit Junction−to−Foot − Steady State RqJL 180 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 300 Junction−to−Ambient − t < 10 s (Note 1) RqJA 250 Junction−to−Ambient − Steady State (Note 2) RqJA 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 650 mm2, 1 oz. Cu pad size. 2. Surface−mounted on FR4 board using 50 mm2, 1 oz. Cu pad size. 3. ESD Rating Information: HBM Class 0. © Semiconductor Components Industries, LLC, 1996 May, 2019 − Rev. 11 = Specific Device Code = Date Code* = Pb−Free Package Package Shipping† MGSF1N03LT1G SOT−23 Pb−Free 3000 / Tape & Reel MGSF1N03LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel MVGSF1N03LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel Device THERMAL RESISTANCE RATINGS Parameter N3 M G 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MGSF1N03LT1/D MGSF1N03L, MVGSF1N03L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 30 − − Vdc − − − − 1.0 10 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mAdc) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) rDS(on) − − 0.08 0.125 0.10 0.145 mAdc ON CHARACTERISTICS (Note 4) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) Ciss − 140 − pF Output Capacitance (VDS = 5.0 Vdc) Coss − 100 − Transfer Capacitance (VDG = 5.0 Vdc) Crss − 40 − td(on) − 2.5 − tr − 1.0 − td(off) − 16 − tf − 8.0 − QT − 6000 − pC IS − − 0.6 A Pulsed Current ISM − − 0.75 Forward Voltage (Note 5) VSD − 0.8 − SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 W) Fall Time Gate Charge (See Figure 6) ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2 MGSF1N03L, MVGSF1N03L TYPICAL ELECTRICAL CHARACTERISTICS 2.5 2.5 VGS = 3.75 V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) VDS = 10 V 2 1.5 - 55°C 1 TJ = 150°C 0.5 3.5 V 2 1.5 3.25 V 1 3.0 V 0.5 2.75 V 25°C 0 1 2.5 V 0 3.5 1.5 2 2.5 3 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0 2 6 4 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On−Region Characteristics RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 0.24 150°C 0.19 VGS = 4.5 V 25°C 0.14 -55°C 0.09 0.04 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.16 150°C 0.14 VGS = 10 V 0.12 0.1 25°C 0.08 -55°C 0.06 0.04 0 ID, DRAIN CURRENT (AMPS) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance versus Drain Current Figure 3. On−Resistance versus Drain Current www.onsemi.com 3 2 MGSF1N03L, MVGSF1N03L 1.8 1.6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS VGS = 10 V ID = 2 A 1.4 1.2 VGS = 4.5 V ID = 1 A 1 0.8 0.6 0.4 0.2 0 -55 10 VDS = 24 V TJ = 25°C 8 6 4 ID = 2.0 A 2 0 -25 25 0 75 50 100 125 150 0 1000 TJ, JUNCTION TEMPERATURE (°C) 3000 4000 5000 6000 QT, TOTAL GATE CHARGE (pC) Figure 6. Gate Charge Figure 5. On−Resistance Variation with Temperature 1 350 VGS = 0 V f = 1 MHz TJ = 25°C 300 TJ = 150°C 0.1 25°C -55°C C, CAPACITANCE (pF) I D , DIODE CURRENT (AMPS) 2000 0.01 250 200 150 Ciss 100 Coss 50 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 Crss 0 4 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (Volts) VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage Figure 8. Capacitance www.onsemi.com 4 20 MGSF1N03L, MVGSF1N03L TYPICAL ELECTRICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 10 10 ms 100 ms 1 ms 1 10 ms 0.1 0 V < VGS < 10 V Single Pulse TJ = 150°C, TC = 25°C 0.01 0.1 1 ms RDS(on) Limit Thermal Limit Package Limit dc 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Maximum Rated Forward Biased Safe Operating Area TRANSIENT THERMAL RESPONSE − RqJA (°C/W) 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 0.1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 10. Thermal Response www.onsemi.com 5 1 10 100 1000 MGSF1N03L, MVGSF1N03L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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