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NCV47710PDAJR2G

NCV47710PDAJR2G

  • 厂商:

    MURATA-PS(村田)

  • 封装:

    SOIC8_EP

  • 描述:

  • 数据手册
  • 价格&库存
NCV47710PDAJR2G 数据手册
NCV47710 LDO Regulator - Adjustable Current Limit, 3.3 V Logic 5 V to 20 V The NCV47710 is a 350 mA output current integrated low dropout regulator designed for use in harsh automotive environments. It includes wide operating temperature and input voltage ranges. The device is offered with adjustable voltage versions available in 6% output voltage accuracy. It has a high peak input voltage tolerance and reverse input voltage protection. It also provides overcurrent protection, overtemperature protection and enable for control of the state of the output voltage. The integrated current sense feature provides diagnosis and system protection functionality. The current limit of the device is adjustable by resistor connected to CSO pin. Voltage on CSO pin is proportional to output current. Features • Adjustable Voltage Version (from 5 V to 20 V) ± 6% Output Voltage • • • • for ±3% Output Voltage Accuracy see NCV47711 Specification Enable Input (3.3 V Logic Compatible Thresholds) for 5 V Logic Compatible Thresholds see NCV47700 or NCV47701 Specification Adjustable Current Limit (from 10 mA to 350 mA) with 10% accuracy Protection Features: ♦ Current Limitation ♦ Thermal Shutdown ♦ Reverse Input Voltage This is a Pb−Free Device Typical Applications • • • • Audio and Infotainment System Instrument Cluster Navigation Satellite Radio www.onsemi.com MARKING DIAGRAMS 8 SOIC−8 Exposed Pad PD SUFFIX CASE 751AC 8 1 47710 ALYW G 1 8 SOIC−8 D SUFFIX CASE 751 8 1 1 A L Y W G 47710 ALYW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN CONNECTIONS ADJ 1 8 Vout GND EN NC NC CSO Vin SOIC−8 EP, SOIC−8 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. C in V out V in Cb* 1 mF NCV47710 EN GND R1 ADJ CSO C CSO 1 mF C out R2 22 mF R CSO *Required if usage of low ESR output capacitor Cout is demand, see Regulator Stability Considerations section. Figure 1. Application Schematic © Semiconductor Components Industries, LLC, 2012 September, 2019 − Rev. 2 1 Publication Order Number: NCV47710/D NCV47710 Vin Vout VOLTAGE REFERENCE VREF1 VREF2 ENABLE EN SATURATION PROTECTION THERMAL SHUTDOWN PASS DEVICE AND CURRENT MIRROR ICSO = Iout / 100 SP TSD + - SP GND + VREF2 2.55 V VREF1 1.275 V ADJ - TSD Figure 2. Simplified Block Diagram PIN FUNCTION DESCRIPTION Pin No. SOIC−8 EP Pin No. SOIC−8 Pin Name 1 1 ADJ Adjustable Voltage Setting Input. See Application Section for more details. 2 2 GND Power Supply Ground. 3 3 EN 4 4 CSO 5 5 Vin Positive Power Supply Input. 6 6 NC Not Connected 7 7 NC Not Connected 8 8 Vout Regulated Output Voltage. EPAD − EPAD Description Enable Input; low level disables the IC. Current Sense Output, Current Limit setting and Output Current value information. See Application Section for more details. Connect to ground potential or leave unconnected. www.onsemi.com 2 CSO NCV47710 ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Rating Min Max Unit Input Voltage Vin −42 45 V Enable Input Voltage VEN −0.3 7.0 V Adjustable Input Voltage VADJ −0.3 10 V CSO Voltage VCSO −0.3 7.0 V Vout −1 40 V Junction Temperature TJ −40 150 °C Storage Temperature TSTG −55 150 °C Output Voltage Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. ESD CAPABILITY (Note 2) Symbol Min Max Unit ESD Capability, Human Body Model ESDHBM −2 2 kV ESD Capability, Machine Model ESDMM −200 200 V Rating 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (JS−001−2010) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes < 50mm2 due to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform characteristic defined in JEDEC JS−002−2014. LEAD SOLDERING TEMPERATURE AND MSL (Note 3) Symbol Rating Moisture Sensitivity Level SOIC−8 EP SOIC−8 Min MSL Max 2 1 Unit − 3. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D THERMAL CHARACTERISTICS Rating Symbol Value Thermal Characteristics, SOIC−8 EP (single layer PCB) Thermal Resistance, Junction−to−Air (Note 4) Thermal Reference, Junction−to−Lead (Note 4) RθJA RψJL 70 19 Thermal Characteristics, SOIC−8 EP (4 layers PCB) Thermal Resistance, Junction−to−Air (Note 4) Thermal Reference, Junction−to−Lead (Note 4) RθJA RψJL 29 12 Thermal Characteristics, SOIC−8 (single layer PCB) Thermal Resistance, Junction−to−Air (Note 4) Thermal Reference, Junction−to−Lead (Note 4) RθJA RψJL 121 42 Thermal Characteristics, SOIC−8 (4 layers PCB) Thermal Resistance, Junction−to−Air (Note 4) Thermal Reference, Junction−to−Lead (Note 4) RθJA RψJL 77 52 Unit °C/W °C/W °C/W °C/W 4. Values based on copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. Single layer − according to JEDEC51.3, 4 layers − according to JEDEC51.7. RECOMMENDED OPERATING RANGES Symbol Min Max Unit Input Voltage (Note 5) Rating Vin 5.5 40 V Output Current Limit (Note 6) ILIM 10 350 mA TJ −40 150 °C Vout_nom 5.0 20 V CCSO 1.0 4.7 mF Junction Temperature Nominal Output Voltage Current Sense Output (CSO) Capacitor Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 5. Minimum Vin = 5.5 V or (Vout_nom + 0.5 V), whichever is higher. 6. Corresponding RCSO is in range from 25 kW down to 728 W. www.onsemi.com 3 NCV47710 ELECTRICAL CHARACTERISTICS Vin = 13.5 V, VEN = 3.3 V, RCSO = 0 W, CCSO = 1 mF, Cin = 1 mF, Cout = 22 mF, ESR = 1.5 W, Min and Max values are valid for temperature range −40°C ≤ TJ ≤ 150°C unless otherwise noted and are guaranteed by test design or statistical correlation. Typical values are referenced to TJ = 25°C. Test Conditions Symbol Min Typ Max Unit Output Voltage (Accuracy %) Vin = (Vout_nom + 1 V) to 40 V, Iout = 5 mA to 350 mA Vout −6 − 6 % Line Regulation Vin = (Vout_nom + 1 V) to (Vout_nom + 20V), Iout = 5mA Regline − 0.1 2.0 % Load Regulation Iout = 5 mA to 350 mA Regload − 0.14 2.8 % Dropout Voltage (Note 7) Iout = 150 mA, VDO = Vin − Vout VDO − 250 500 mV IDIS − − − 85 10 − mA nA Parameter REGULATOR OUTPUT DISABLE AND QUIESCENT CURRENTS Disable Current VEN = 0 V VEN = 0 V, TJ = 25°C Quiescent Current, Iq = Iin − Iout Iout = 1 mA, Vin = (Vout_nom + 8.5 V) Iq − 150 230 mA Quiescent Current, Iq = Iin − Iout Iout = 350 mA, Vin = (Vout_nom + 8.5 V) Iq − 23 50 mA Vout = 0.9 x Vout_nom, Vin = (Vout_nom + 8.5 V) ILIM 400 − − mA Power Supply Ripple Rejection f = 100 Hz, 0.5 Vp−p, Iout = 5 mA, Cin = none PSRR − 70 − dB Output Noise Voltage f = 10 Hz to 100 kHz, Cb = 10 nF, Iout = 5 mA Vn − 100 − mVrms 0.99 − 1.85 1.9 − 2.31 CURRENT LIMIT PROTECTION Current Limit PSRR & NOISE ENABLE Vth(EN) V Enable Input Threshold Voltage Logic Low (OFF) Logic High (ON) Vout v 0.1 V Vout w 0.9 x Vout_nom Enable Input Current VEN = 3.3 V IEN 2.0 9.0 20 mA Turn On Time from Enable ON to 90% of Vout_nom Iout = 100 mA, Cb = 10 nF, R1 = 82 kW, R2 = 27 kW ton − 1.6 − ms CSO Voltage Level at Current Limit Vout = 0.9 x Vout_nom, (Vout_nom = 5 V) RCSO = 1 kW VCSO_Ilim 2.346 (−8 %) 2.55 2.754 (+8 %) V CSO Transient Voltage Level CCSO = 4.7 mF, RCSO = 1 kW, Iout pulse from 10 mA to 350 mA, tr = 1 ms VCSO − − 3.0 V CSO Current to Output Current Ratio (Note 8) VCSO = 2 V, Iout = 10 mA to 350 mA, (Vout_nom = 5V) ICSO/Iout − (−10%) (1/100) − (+10%) − CSO Current at No Load Current VCSO = 0 V, Iout = 0 mA, (Vout_nom = 5 V) ICSO_off − − 10 mA Vin = 12 V, Vout = 14 V Iout_rev −40 −25 − mA TSD 150 − 195 °C OUTPUT CURRENT SENSE REVERSE CURRENT Reverse Current (Note 9) THERMAL SHUTDOWN Thermal Shutdown Temperature Iout = 5 mA 7. Measured when the output voltage Vout has dropped −2% from the nominal value obtained at Vin = Vout_nom + 8.5 V. 8. Not guaranteed in dropout. 9. Values based on design and/or characterization. www.onsemi.com 4 NCV47710 TYPICAL CHARACTERISTICS 0.40 Vin = 13.5 V Iout = 5 mA 1.31 1.30 1.29 1.28 1.27 1.26 1.25 1.24 −40 −20 0.35 Iq, QUIESCENT CURRENT (mA) VREF1, REFERENCE VOLTAGE (V) 1.32 0.30 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Reference Voltage vs. Temperature 0 5 10 15 20 25 30 Vin, INPUT VOLTAGE (V) 35 40 Figure 4. Quiescent Current vs. Input Voltage 6 2 TJ = 25°C Iout = 5 mA Vout_nom = 5 V 5 TJ = 25°C Rout = 4.7 kW Vout_nom = 5 V 1 Iin, INPUT CURRENT (mA) Vout, OUTPUT VOLTAGE (V) TJ = 25°C Iout = 5 mA Vout_nom = 5 V 4 3 2 1 0 −1 −2 −3 −4 −5 −6 −7 0 0 1 2 3 5 7 4 6 Vin, INPUT VOLTAGE (V) 9 8 −8 −45 −40 −35 −30 −25 −20 −15 −10 −5 Vin, INPUT VOLTAGE (V) 10 ILIM, OUTPUT CURRENT LIMIT (mA) VDO, DROPOUT VOLTAGE (mV) 800 Vin = 13.5 V Vout_nom = 5 V 600 TJ = 150°C 500 400 TJ = 25°C 300 200 TJ = −40°C 100 0 0 50 100 150 200 250 Iout, OUTPUT CURRENT (mA) 300 5 10 40 45 Figure 6. Input Current vs. Input Voltage (Reverse Input Voltage) Figure 5. Output Voltage vs. Input Voltage 700 0 350 Figure 7. Dropout vs. Output Current 1400 Vout = 4.5 V Vout_nom = 5 V 1300 TJ = −40°C 1200 1100 TJ = 25°C 1000 900 TJ = 150°C 800 700 600 0 5 10 15 20 25 30 35 Vin, INPUT VOLTAGE (V) Figure 8. Output Current Limit vs. Input Voltage www.onsemi.com 5 NCV47710 TYPICAL CHARACTERISTICS 3.0 Vout = 5 V to 20 V TJ = 25°C 350 Vout = 5 V to 20 V TJ = 25°C ILIM = 10 mA to 350 mA 2.5 300 2.0 250 VCSO, (V) ILIM, OUTPUT CURRENT LIMIT (mA) 400 200 150 1.5 1.0 100 0.5 50 0 2 0 4 6 0 8 10 12 14 16 18 20 22 24 26 28 RCSO, (kW) 0 Figure 9. Output Current Limit vs. RCSO 104 103 Iout/ICSO, OUTPUT CURRENT TO CSO CURRENT RATIO Iout/ICSO, OUTPUT CURRENT TO CSO CURRENT RATIO 105 TJ = 25°C Vin = 13.5 V 102 101 100 99 98 97 96 95 1 10 100 Iout, OUTPUT CURRENT (mA) 100 95 90 85 80 75 70 65 TJ = 25°C Vin = 4.5 V Vout_nom = 5 V 60 55 50 1 1000 Figure 11. Output Current to CSO Current Ratio vs. Output Current 1000 10 100 Iout, OUTPUT CURRENT (mA) Figure 12. Output Current to CSO Current Ratio vs. Output Current in Dropout 25 5.0 TJ = 25°C Vin = 13.5 V 20 Iq, QUIESCENT CURRENT (mA) Iq, QUIESCENT CURRENT (mA) 125 Figure 10. Output Current (% of ILIM) vs. CSO Voltage 105 15 10 5 0 25 50 75 100 Iout, OUTPUT CURRENT (% of ILIM) 0 50 100 150 200 250 Iout, OUTPUT CURRENT (mA) 300 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 350 Figure 13. Quiescent Current vs. Output Current (High Load) TJ = 25°C Vin = 13.5 V 4.5 0 10 20 30 40 50 60 70 80 Iout, OUTPUT CURRENT (mA) 90 100 Figure 14. Quiescent Current vs. Output Current (Low Load) www.onsemi.com 6 NCV47710 TYPICAL CHARACTERISTICS TJ = 25°C Vin = 13.5 V Vout_nom = 5 V Iout = 5 mA 2500 80 75 PSRR (dB) 2000 90 85 Noise 10 Hz − 100 kHz Vn = 100.6 mV 1500 1000 70 65 60 55 40 35 0 10 100 1000 FREQUENCY (Hz) 10000 100000 Iout = 5 mA 50 45 500 30 10 100 Unstable Region 10 100 1000 10000 FREQUENCY (Hz) TJ = 25°C Vin = Vout_nom + 8.5 V Cout = 10−100 mF, Cb = none Vout = 20 V 0.1 0.01 Unstable Region 0 50 100000 1000000 Figure 16. PSRR vs. Frequency Vout = 5 V 1 Iout = 150 mA TJ = 25°C Vin = 13.5 V Vout_nom = 5 V Figure 15. Output Noise Density vs. Frequency Cout, ESR STABILITY REGION (W) OUTPUT NOISE DENSITY (nV/√Hz) 3000 100 150 200 250 Iout, OUTPUT CURRENT (mA) 300 350 Figure 17. Cout ESR Stability Region vs. Output Current www.onsemi.com 7 NCV47710 DEFINITIONS General reduces its internal bias and shuts off the output, this term is called the disable current (IDIS). All measurements are performed using short pulse low duty cycle techniques to maintain junction temperature as close as possible to ambient temperature. Current Limit Current Limit is value of output current by which output voltage drops below 90% of its nominal value. Output Voltage The output voltage parameter is defined for specific temperature, input voltage and output current values or specified over Line, Load and Temperature ranges. PSRR Power Supply Rejection Ratio is defined as ratio of output voltage and input voltage ripple. It is measured in decibels (dB). Line Regulation The change in output voltage for a change in input voltage measured for specific output current over operating ambient temperature range. Line Transient Response Typical output voltage overshoot and undershoot response when the input voltage is excited with a given slope. Load Regulation Load Transient Response The change in output voltage for a change in output current measured for specific input voltage over operating ambient temperature range. Typical output voltage overshoot and undershoot response when the output current is excited with a given slope between low−load and high−load conditions. Dropout Voltage Thermal Protection The input to output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. It is measured when the output voltage Vout has dropped −2% from the nominal value obtained at Vin = Vout_nom + 8.5 V. The junction temperature, load current, and minimum input supply requirements affect the dropout level. Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When activated at typically 175°C, the regulator turns off. This feature is provided to prevent failures from accidental overheating. Maximum Package Power Dissipation The power dissipation level is maximum allowed power dissipation for particular package or power dissipation at which the junction temperature reaches its maximum operating value, whichever is lower. Quiescent and Disable Currents Quiescent Current (Iq) is the difference between the input current (measured through the LDO input pin) and the output load current. If Enable pin is set to LOW the regulator www.onsemi.com 8 NCV47710 APPLICATIONS INFORMATION Circuit Description Calculating Bypass Capacitor The NCV47710 is an integrated low dropout regulator that provides a regulated voltage at 350 mA to the output. It is enabled with an input to the enable pin. The regulator voltage is provided by a PNP pass transistor controlled by an error amplifier with a bandgap reference, which gives it the lowest possible dropout voltage. The output current capability is 350 mA, and the base drive quiescent current is controlled to prevent oversaturation when the input voltage is low or when the output is overloaded. The integrated current sense feature provides diagnosis and system protection functionality. The current limit of the device is adjustable by resistor connected to CSO pin. Voltage on CSO pin is proportional to output current. The regulator is protected by both current limit and thermal shutdown. Thermal shutdown occurs above 150°C to protect the IC during overloads and extreme ambient temperatures. If usage of low ESR ceramic capacitors is demanded, connect the bypass capacitor Cb between Adjustable Input pin and Vout pin according to Applications circuit at Figure 1. Parallel combination of bypass capacitor Cb with the feedback resistor R1 contributes in the device transfer function as an additional zero and affects the device loop stability, therefore its value must be optimized. Attention to the Output Capacitor value and its ESR must be paid. See also Stability in High Speed Linear LDO Regulators Application Note, AND8037/D for more information. Optimal value of bypass capacitor is given by following expression: Cb + 1 2 p fz (eq. 1) R1 where R1 − the upper feedback resistor fz − the frequency of the zero added into the device transfer function by R1 and Cb external components. Set the R1 resistor according to output voltage requirement. Chose the fz with regard on the output capacitance Cout, refer to the table below. Regulator The error amplifier compares the reference voltage to a sample of the output voltage (Vout) and drives the base of a PNP series pass transistor via a buffer. The reference is a bandgap design to give it a temperature−stable output. Saturation control of the PNP is a function of the load current and input voltage. Oversaturation of the output power device is prevented, and quiescent current in the ground pin is minimized. Cout (mF) fZ range (kHz) Regulator Stability Considerations 10 22 47 100 3.3−48.2 1.5−33 1.5−33 2.2−22 Ceramic capacitors and its part numbers listed bellow have been used as low ESR output capacitors Cout from the table above to define the frequency ranges of additional zero required for stability: The input capacitor (Cin) is necessary to stabilize the input impedance to avoid voltage line influences. The output capacitor (Cout) helps determine three main characteristics of a linear regulator: startup delay, load transient response and loop stability. The capacitor value and type should be based on cost, availability, size and temperature constraints. The aluminum electrolytic capacitor is the least expensive solution, but, if the circuit operates at low temperatures (−25°C to −40°C), both the value and ESR of the capacitor will vary considerably. The capacitor manufacturer’s data sheet usually provides this information. The value for the output capacitor Cout, shown in Figure 1 should work for most applications; see also Figure 17 for output stability at various load and Output Capacitor ESR conditions. Stable region of ESR in Figure 17 shows ESR values at which the LDO output voltage does not have any permanent oscillations at any dynamic changes of output load current. Marginal ESR is the value at which the output voltage waving is fully damped during four periods after the load change and no oscillation is further observable. ESR characteristics were measured with ceramic capacitors and additional series resistors to emulate ESR. Low duty cycle pulse load current technique has been used to maintain junction temperature close to ambient temperature. GRM31CR71C106KAC7 (10 mF, 16 V, X7R, 1206) GRM32ER71C226KE18 (22 mF, 16 V, X7R, 1210) GRM32ER61C476ME15 (47 mF, 16 V, X5R, 1210) GRM32ER60J107ME20 (100 mF, 6.3 V, X5R, 1210) Enable Input The enable pin is used to turn the regulator on or off. By holding the pin down to a voltage less than 0.99 V, the output of the regulator will be turned off. When the voltage on the enable pin is greater than 2.31 V, the output of the regulator will be enabled to power its output to the regulated output voltage. Setting the Output Voltage The output voltage range can be set between 5 V and 20 V. This is accomplished with an external resistor divider feeding back the voltage to the IC back to the error amplifier by the voltage adjust pin ADJ. The internal reference voltage is set to a temperature stable reference (VREF1) of 1.275 V. The output voltage is calculated from the following formula. Ignoring the bias current into the ADJ pin: www.onsemi.com 9 NCV47710 ǒ V out + V REF1 1 ) Ǔ R1 (eq. 2) R2 P D(MAX) + Use R2 < 50 kW to avoid significant voltage output errors due to ADJ bias current. Designers should consider the tolerance of R1 and R2 during the design phase. The output current limit can be set between 10 mA and 350 mA by external resistor RCSO (see Figure 1). Capacitor CCSO of 1 mF in parallel with RCSO is required for stability of current limit control circuitry (see Figure 1). ǒ 100 I LIM + 1 R CSO + 100 1 Ǔ 1 100 2.55 R CSO 2.55 I LIM (eq. 6) R qJA Since TJ is not recommended to exceed 150°C, then the NCV47710 soldered on 645 mm2, 1 oz copper area, FR4 can dissipate up to 1.8 W (SOIC−8 EP) or 1 W (SOIC−8) and up to 4.3 W (SOIC−8 EP) or 1.6 W (SOIC−8) for 4 layers PCB (all layers are 1 oz) when the ambient temperature (TA) is 25°C. See Figure 18 for RthJA versus PCB area. The power dissipated by the NCV47710 can be calculated from the following equations: Setting the Output Current Limit V CSO + I out R CSO ƪTJ(MAX) * TAƫ P D + V inǒI q@I outǓ ) I outǒV in * V outǓ (eq. 7) or (eq. 3) V in(MAX) [ (eq. 4) P D(MAX) ) ǒV out I outǓ (eq. 8) I out ) I q Hints (eq. 5) Vin and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCV47710 and make traces as short as possible. Where RCSO − current limit setting resistor VCSO − voltage at CSO pin proportional to Iout ILIM − current limit value Iout − output current actual value CSO pin provides information about output current actual value. The CSO voltage is proportional to output current according to Equation 3. Once output current reaches its limit value (ILIM) set by external resistor RCSO than voltage at CSO pin is typically 2.55 V. Calculations of ILIM or RCSO values can be done using equations Equation 4 and Equation 5, respectively. RqJA, THERMAL RESISTANCE (°C/W) 220 Thermal Considerations As power in the NCV47710 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. When the NCV47710 has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power applications. The maximum dissipation the NCV47710 can handle is given by: 200 180 160 1 oz 140 SO−8 single layer PCB 2 oz 120 100 80 2 oz 1 oz 1 oz 2 oz SO−8 EP single layer PCB 60 SO−8 4 layers PCB 1 oz 2 oz 40 SO−8 EP 4 layers PCB 20 0 100 200 300 400 500 600 700 COPPER HEAT SPREADER AREA (mm2) Figure 18. Thermal Resistance vs. PCB Copper Area ORDERING INFORMATION Device Output Voltage Marking Package Shipping† NCV47710PDAJR2G Adjustable 47710 SOIC−8 EP (Pb−Free) 2500 / Tape & Reel NCV47710DAJR2G Adjustable 47710 SOIC−8 (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 EP CASE 751AC ISSUE D 8 1 SCALE 1:1 DATE 02 APR 2019 GENERIC MARKING DIAGRAM* 8 XXXXX AYWWG G 1 DOCUMENT NUMBER: DESCRIPTION: XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 98AON14029D SOIC−8 EP *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present and may be in either location. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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