NJT4030P, NJV4030P
Bipolar Power Transistors
PNP Silicon
Features
• Epoxy Meets UL 94, V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
•
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Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
COLLECTOR 2,4
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VCEO
40
Vdc
Collector−Base Voltage
VCB
40
Vdc
Emitter−Base Voltage
VEB
6.0
Vdc
Base Current − Continuous
IB
1.0
Adc
Collector Current − Continuous
IC
3.0
Adc
ICM
5.0
Adc
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Collector−Emitter Voltage
Collector Current − Peak
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
Characteristic
Total Power Dissipation
Total PD @ TA = 25°C (Note 1)
Total PD @ TA = 25°C (Note 2)
Symbol
PD
Max
Unit
Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds
Operating and Storage Junction
Temperature Range
°C/W
RqJA
RqJA
64
155
TL
260
°C
TJ, Tstg
−55 to
+ 150
°C
1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material.
2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material.
© Semiconductor Components Industries, LLC, 2013
October, 2018 − Rev. 6
EMITTER 3
MARKING
DIAGRAM
4
1
2
3
SOT−223
CASE 318E
STYLE 1
AYW
4030PG
G
1
A
Y
W
4030P
G
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb−Free Package
(Note: Microdot may be in either location)
W
2.0
0.80
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
BASE
1
1
ORDERING INFORMATION
Device
Package
Shipping†
NJT4030PT1G
SOT−223
(Pb−Free)
1000 / Tape &
Reel
SOT−223
(Pb−Free)
4000 / Tape &
Reel
NJV4030PT1G
NJT4030PT3G
NJV4030PT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NJT4030P/D
NJT4030P, NJV4030P
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
40
−
−
6.0
−
−
−
−
100
−
−
100
−
−
−
−
−
−
0.150
0.200
0.500
−
−
1.0
−
−
1.0
220
200
100
−
−
−
−
400
−
−
40
−
−
130
−
−
160
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
VCEO(sus)
Emitter−Base Voltage
(IE = 50 mAdc, IC = 0 Adc)
VEBO
Collector Cutoff Current
(VCB = 40 Vdc)
ICBO
Emitter Cutoff Current
(VBE = 6.0 Vdc)
IEBO
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 3)
Collector−Emitter Saturation Voltage
(IC = 0.5 Adc, IB = 5.0 mAdc)
(IC = 1.0 Adc, IB = 10 mAdc)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
DC Current Gain
(IC = 0.5 Adc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
Vdc
Vdc
Vdc
−
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 5.0 Vdc, f = 1.0 MHz)
Cib
Current−Gain − Bandwidth Product (Note 4)
(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)
fT
pF
pF
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. fT = |hFE| • ftest
PD, POWER DISSIPATION (W)
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25
50
75
100
TJ, TEMPERATURE (°C)
Figure 1. Power Derating
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2
125
150
NJT4030P, NJV4030P
TYPICAL CHARACTERISTICS
700
VCE = 1 V
150°C
500
400
25°C
300
−40°C
200
100
150°C
500
400
25°C
300
−40°C
200
100
0
0.001
0.01
0.1
1
0
10
1
Figure 3. DC Current Gain
10
−40°C
0.1
0.01
0.001
0.01
0.1
1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1
150°C
IC/IB = 50
150°C
25°C
0.01
10
0.001
VBE(on), EMITTER−BASE VOLTAGE (V)
IC = 2 A
1A
0.5 A
0.1 A
1.0E−02
0.1
1
10
Figure 5. Collector−Emitter Saturation Voltage
1
1.0E−04 1.0E−03
0.01
IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
0.1
−40°C
0.1
IC, COLLECTOR CURRENT (A)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.1
Figure 2. DC Current Gain
25°C
0.01
0.01
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0.001
0.001
IC, COLLECTOR CURRENT (A)
1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 4 V
600
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
600
1.0E−01
1.0E+00
1.2
1.1
VCE = 2 V
1.0
0.9
−40°C
0.8
0.7
0.6
25°C
0.5
0.4
0.3
0.2
0.1
0
150°C
0.001
IB, BASE CURRENT (A)
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. Collector Saturation Region
Figure 7. VBE(on) Voltage
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3
10
NJT4030P, NJV4030P
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
IC/IB = 10
VBE(sat), EMITTER−BASE
SATURATION VOLTAGE (V)
VBE(sat), EMITTER−BASE
SATURATION VOLTAGE (V)
TYPICAL CHARACTERISTICS
−40°C
25°C
150°C
0.001
0.01
0.1
1
10
1.1
1.0
IC/IB = 50
0.9
−40°C
0.8
0.7
0.6
25°C
0.5
0.4
0.3
0.2
0.1
0
150°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
100
250
200
150
100
50
0
0
1
2
3
4
5
40
20
0
5
10
15
20
25
30
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
35
10
TJ = 25°C
ftest = 1 MHz
VCE = 10 V
140
120
100
80
60
40
20
0
60
VEB, EMITTER BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
fTau, CURRENT BANDWIDTH
PRODUCT (MHz)
180
TJ = 25°C
ftest = 1 MHz
80
0
6
200
160
10
Figure 9. Base−Emitter Saturation Voltage
TJ = 25°C
ftest = 1 MHz
300
1
IC, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
350
0.1
0.001
0.01
0.1
1
0.5 ms
1 ms
1
10 ms
100 ms
0.1
0.01
1
IC, COLLECTOR CURRENT (A)
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
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4
100
NJT4030P, NJV4030P
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE R
q
q
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
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5
NJT4030P, NJV4030P
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NJT4030P/D