NJT4030PT3G

Bipolar Power Transistors PNP Silicon NJT4030P, NJV4030P Features • Epoxy Meets UL 94, V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring • www.onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS MAXIMUM RATINGS (TC = 25°C unless otherwise noted) COLLECTOR 2,4 Symbol Value Unit VCEO 40 Vdc Collector−Base Voltage VCB 40 Vdc Emitter−Base Voltage VEB 6.0 Vdc Base Current − Continuous IB 1.0 Adc Collector Current − Continuous IC 3.0 Adc ICM 5.0 Adc ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Rating Collector−Emitter Voltage Collector Current − Peak Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Power Dissipation Total PD @ TA = 25°C (Note 1) Total PD @ TA = 25°C (Note 2) Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds Operating and Storage Junction Temperature Range Symbol PD Max Unit W 2.0 0.80 °C/W RqJC RqJA RqJA 11 64 155 TL 260 °C TJ, Tstg −55 to + 150 °C 1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material. 2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material. © Semiconductor Components Industries, LLC, 2013 February, 2021 − Rev. 7 1 BASE 1 EMITTER 3 MARKING DIAGRAM 4 1 2 3 SOT−223 CASE 318E STYLE 1 AYW 4030PG G 1 A Y W 4030P G = Assembly Location Year = Work Week = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NJT4030PT1G SOT−223 (Pb−Free) 1000 / Tape & Reel SOT−223 (Pb−Free) 4000 / Tape & Reel NJV4030PT1G NJT4030PT3G NJV4030PT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NJT4030P/D NJT4030P, NJV4030P ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 40 − − 6.0 − − − − 100 − − 100 − − − − − − 0.150 0.200 0.500 − − 1.0 − − 1.0 220 200 100 − − − − 400 − − 40 − − 130 − − 160 − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) VCEO(sus) Emitter−Base Voltage (IE = 50 mAdc, IC = 0 Adc) VEBO Collector Cutoff Current (VCB = 40 Vdc) ICBO Emitter Cutoff Current (VBE = 6.0 Vdc) IEBO Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 3) Collector−Emitter Saturation Voltage (IC = 0.5 Adc, IB = 5.0 mAdc) (IC = 1.0 Adc, IB = 10 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VBE(sat) Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) DC Current Gain (IC = 0.5 Adc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) hFE Vdc Vdc Vdc − DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) Cob Input Capacitance (VEB = 5.0 Vdc, f = 1.0 MHz) Cib Current−Gain − Bandwidth Product (Note 4) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) fT pF pF MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. fT = |hFE| • ftest PD, POWER DISSIPATION (W) 2.5 2.0 TC 1.5 1.0 TA 0.5 0 25 50 75 100 TJ, TEMPERATURE (°C) Figure 1. Power Derating www.onsemi.com 2 125 150 NJT4030P, NJV4030P TYPICAL CHARACTERISTICS 700 VCE = 1 V 150°C 500 400 25°C 300 −40°C 200 100 150°C 500 400 25°C 300 −40°C 200 100 0 0.001 0.01 0.1 1 0 10 1 Figure 3. DC Current Gain 10 −40°C 0.1 0.01 0.001 0.01 0.1 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 150°C IC/IB = 50 150°C 25°C 0.01 10 0.001 VBE(on), EMITTER−BASE VOLTAGE (V) IC = 2 A 1A 0.5 A 0.1 A 1.0E−02 0.1 1 10 Figure 5. Collector−Emitter Saturation Voltage 1 1.0E−04 1.0E−03 0.01 IC, COLLECTOR CURRENT (A) Figure 4. Collector−Emitter Saturation Voltage 0.1 −40°C 0.1 IC, COLLECTOR CURRENT (A) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.1 Figure 2. DC Current Gain 25°C 0.01 0.01 IC, COLLECTOR CURRENT (A) IC/IB = 10 0.001 0.001 IC, COLLECTOR CURRENT (A) 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 4 V 600 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 600 1.0E−01 1.0E+00 1.2 1.1 VCE = 2 V 1.0 0.9 −40°C 0.8 0.7 0.6 25°C 0.5 0.4 0.3 0.2 0.1 0 150°C 0.001 IB, BASE CURRENT (A) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 6. Collector Saturation Region Figure 7. VBE(on) Voltage www.onsemi.com 3 10 NJT4030P, NJV4030P 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.2 IC/IB = 10 VBE(sat), EMITTER−BASE SATURATION VOLTAGE (V) VBE(sat), EMITTER−BASE SATURATION VOLTAGE (V) TYPICAL CHARACTERISTICS −40°C 25°C 150°C 0.001 0.01 0.1 1 10 1.1 1.0 IC/IB = 50 0.9 −40°C 0.8 0.7 0.6 25°C 0.5 0.4 0.3 0.2 0.1 0 150°C 0.001 0.01 IC, COLLECTOR CURRENT (A) Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 100 250 200 150 100 50 0 0 1 2 3 4 5 40 20 0 5 10 15 20 25 30 VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance Figure 11. Output Capacitance 35 10 TJ = 25°C ftest = 1 MHz VCE = 10 V 140 120 100 80 60 40 20 0 60 VEB, EMITTER BASE VOLTAGE (V) IC, COLLECTOR CURRENT (A) fTau, CURRENT BANDWIDTH PRODUCT (MHz) 180 TJ = 25°C ftest = 1 MHz 80 0 6 200 160 10 Figure 9. Base−Emitter Saturation Voltage TJ = 25°C ftest = 1 MHz 300 1 IC, COLLECTOR CURRENT (A) Figure 8. Base−Emitter Saturation Voltage 350 0.1 0.001 0.01 0.1 1 0.5 ms 1 ms 1 10 ms 100 ms 0.1 0.01 1 IC, COLLECTOR CURRENT (A) 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 12. Current−Gain Bandwidth Product Figure 13. Safe Operating Area www.onsemi.com 4 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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