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NSI45025AZT1G

NSI45025AZT1G

  • 厂商:

    MURATA-PS(村田)

  • 封装:

    SOT223-3

  • 描述:

  • 数据手册
  • 价格&库存
NSI45025AZT1G 数据手册
NSI45025AZ, NSV45025AZ 45 V, 25 mA ± 10%, 1.4 W package, Constant Current Regulator, SOT-223 The linear constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost−effective solution for regulating current in LEDs (similar to Constant Current Diode, CCD). The CCR is based on Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 25% of regulation with only 0.5 V Vak. It requires no external components allowing it to be designed as a high or low−side regulator. The high anode-cathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. The CCR comes in thermally robust packages and is qualified to AEC-Q101 standard, and UL94 −V0 certified. http://onsemi.com Ireg(SS) = 25 mA @ Vak = 7.5 V Anode 1 Cathode 2/4 Features • • • • • • • Robust Power Package: 1.4 Watts Wide Operating Voltage Range & Immediate Turn-On Voltage Surge Suppressing − Protecting LEDs SBT (Self−Biased Transistor) Technology Negative Temperature Coefficient NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free and are RoHS Compliant SOT−223 CASE 318E STYLE 2 MARKING DIAGRAM C AYW AAFG G Applications • Automobile: Chevron Side Mirror Markers, Cluster, Display & • • • • Instrument Backlighting, CHMSL, Map Light AC Lighting Panels, Display Signage, Decorative Lighting, Channel Lettering Switch Contact Wetting Application Note AND8391/D − Power Dissipation Considerations Application Note AND8349/D − Automotive CHMSL 1 A C NC A = Assembly Location Y = Year W = Work Week AAF = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Anode−Cathode Voltage Reverse Voltage Operating and Storage Junction Temperature Range ESD Rating: Human Body Model Machine Model Symbol Value Unit Vak Max 45 V VR 500 mV TJ, Tstg −55 to +150 °C ESD Class 1C Class B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2013 July, 2013 − Rev. 3 1 ORDERING INFORMATION Device Package Shipping† NSI45025AZT1G SOT−223 (Pb−Free) 1000/Tape & Reel NSV45025AZT1G SOT−223 (Pb−Free) 1000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSI45025AZ/D NSI45025AZ, NSV45025AZ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Steady State Current @ Vak = 7.5 V (Note 1) Voltage Overhead (Note 2) 1. 2. 3. 4. Symbol Min Typ Max Unit Ireg(SS) 22.5 25 27.5 mA Voverhead Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) Capacitance @ Vak = 7.5 V (Note 4) C Capacitance @ Vak = 0 V (Note 4) C 1.8 23.4 Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300 Voverhead = Vin − VLEDs. Voverhead is typical value for 75% Ireg(SS). Ireg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec. f = 1 MHz, 0.02 V RMS. mm2 26 V 28.65 mA 2.6 pF 6.9 pF 2 oz. Copper traces, in still air. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 954 7.6 mW mW/°C RθJA 131 °C/W RψJL4 40.8 °C/W PD 1074 8.6 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 116 °C/W Thermal Reference, Junction−to−Lead 4 (Note 6) RψJL4 39.9 °C/W PD 1150 9.2 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 109 °C/W Thermal Reference, Junction−to−Lead 4 (Note 7) RψJL4 42 °C/W PD 1300 10.4 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 8) RθJA 96 °C/W Thermal Reference, Junction−to−Lead 4 (Note 8) RψJL4 39.4 °C/W PD 1214 9.7 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 9) RθJA 103 °C/W Thermal Reference, Junction−to−Lead 4 (Note 9) RψJL4 40.2 °C/W PD 1389 11.1 mW mW/°C Total Device Dissipation (Note 5) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 5) Thermal Reference, Junction−to−Lead 4 (Note 5) Total Device Dissipation (Note 6) TA = 25°C Derate above 25°C Total Device Dissipation (Note 7) TA = 25°C Derate above 25°C Total Device Dissipation (Note 8) TA = 25°C Derate above 25°C Total Device Dissipation (Note 9) TA = 25°C Derate above 25°C Total Device Dissipation (Note 10) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 10) RθJA 90 °C/W Thermal Reference, Junction−to−Lead 4 (Note 10) RψJL4 37.7 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 5. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 6. FR−4 @ 100 mm2, 2 oz. copper traces, still air. 7. FR−4 @ 300 mm2, 1 oz. copper traces, still air. 8. FR−4 @ 300 mm2, 2 oz. copper traces, still air. 9. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 10. FR−4 @ 500 mm2, 2 oz. copper traces, still air. NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical measurements and method of attachment. http://onsemi.com 2 NSI45025AZ, NSV45025AZ TYPICAL PERFORMANCE CURVES Minimum FR−4 @ 300 mm2, 2 oz Copper Trace, Still Air 50 40 30 20 10 VR 0 −10 −20 −10 0 10 20 30 50 40 60 TA = 25°C 25 TA = 85°C 20 15 TA = 125°C 10 5 0 DC Test Steady State, Still Air 0 1 2 4 5 6 7 9 8 10 Figure 2. Steady State Current (Ireg(SS)) vs. Anode−Cathode Voltage (Vak) Ireg(SS), STEADY STATE CURRENT (mA) TA = 25°C 25 24 23 22 3.0 Non−Repetitive Pulse Test 4.0 5.0 6.0 7.0 8.0 9.0 10 28 Vak @ 7.5 V TA = 25°C 27 26 25 24 23 22 23 25 24 Vak, ANODE−CATHODE VOLTAGE (V) 2200 Vak @ 7.5 V TA = 25°C POWER DISSIPATION (mW) 25 15 20 25 29 28 30 500 mm2/2 oz 2000 26 10 27 Figure 4. Steady State Current vs. Pulse Current Testing 27 5 26 Ireg(P), PULSE CURRENT (mA) Figure 3. Pulse Current (Ireg(P)) vs. Anode−Cathode Voltage (Vak) Ireg, CURRENT REGULATION (mA) 3 Figure 1. General Performance Curve for CCR 26 0 [ −0.051 mA/°C typ @ Vak = 7.5 V Vak, ANODE−CATHODE VOLTAGE (V) 27 24 [ −0.070 mA/°C typ @ Vak = 7.5 V [ −0.058 mA/°C typ @ Vak = 7.5 V TA = −40°C Vak, ANODE−CATHODE VOLTAGE (V) 28 Ireg(P), PULSE CURRENT (mA) 30 Ireg(SS), STEADY STATE CURRENT (mA) Ireg, CURRENT REGULATION (mA) 60 300 mm2/2 oz 1800 1600 100 mm2/2 oz 1400 1200 1000 500 mm2/1 oz 800 600 400 −40 35 300 mm2/1 oz 100 mm2/1 oz −20 0 20 40 60 TA, AMBIENT TEMPERATURE (°C) TIME (s) Figure 6. Power Dissipation vs. Ambient Temperature @ TJ = 1505C Figure 5. Current Regulation vs. Time http://onsemi.com 3 80 NSI45025AZ, NSV45025AZ APPLICATIONS INFORMATION The CCR is a self biased transistor designed to regulate the current through itself and any devices in series with it. The device has a slight negative temperature coefficient, as shown in Figure 2 – Tri Temp. (i.e. if the temperature increases the current will decrease). This negative temperature coefficient will protect the LEDS by reducing the current as temperature rises. The CCR turns on immediately and is typically at 20% of regulation with only 0.5 V across it. The device is capable of handling voltage for short durations of up to 45 V so long as the die temperature does not exceed 150°C. The determination will depend on the thermal pad it is mounted on, the ambient temperature, the pulse duration, pulse shape and repetition. Single LED String The CCR can be placed in series with LEDs as a High Side or a Low Side Driver. The number of the LEDs can vary from one to an unlimited number. The designer needs to calculate the maximum voltage across the CCR by taking the maximum input voltage less the voltage across the LED string (Figures 7 and 8). Figure 8. Higher Current LED Strings Two or more fixed current CCRs can be connected in parallel. The current through them is additive (Figure 9). Figure 7. Figure 9. http://onsemi.com 4 NSI45025AZ, NSV45025AZ Other Currents LEDs on and off for a portion of a single cycle. This on/off cycle is called the Duty cycle (D) and is expressed by the amount of time the LEDs are on (Ton) divided by the total time of an on/off cycle (Ts) (Figure 12). The adjustable CCR can be placed in parallel with any other CCR to obtain a desired current. The adjustable CCR provides the ability to adjust the current as LED efficiency increases to obtain the same light output (Figure 10). Figure 12. The current through the LEDs is constant during the period they are turned on resulting in the light being consistent with no shift in chromaticity (color). The brightness is in proportion to the percentage of time that the LEDs are turned on. Figure 13 is a typical response of Luminance vs Duty Cycle. 6000 ILLUMINANCE (lx) 5000 4000 Figure 10. 3000 Dimming using PWM The dimming of an LED string can be easily achieved by placing a BJT in series with the CCR (Figure 11). 2000 Lux Linear 1000 0 0 10 20 30 40 50 60 70 DUTY CYCLE (%) 80 90 100 Figure 13. Luminous Emmitance vs. Duty Cycle Reducing EMI Designers creating circuits switching medium to high currents need to be concerned about Electromagnetic Interference (EMI). The LEDs and the CCR switch extremely fast, less than 100 nanoseconds. To help eliminate EMI, a capacitor can be added to the circuit across R2. (Figure 11) This will cause the slope on the rising and falling edge on the current through the circuit to be extended. The slope of the CCR on/off current can be controlled by the values of R1 and C1. The selected delay / slope will impact the frequency that is selected to operate the dimming circuit. The longer the delay, the lower the frequency will be. The delay time should not be less than a 10:1 ratio of the minimum on time. The frequency is also impacted by the resolution and dimming steps that are required. With a delay of 1.5 microseconds on the rise and the fall edges, the minimum on time would be 30 microseconds. If the design called for a resolution of 100 dimming steps, then a total duty cycle time (Ts) of 3 milliseconds or a frequency of 333 Hz will be required. Figure 11. The method of pulsing the current through the LEDs is known as Pulse Width Modulation (PWM) and has become the preferred method of changing the light level. LEDs being a silicon device, turn on and off rapidly in response to the current through them being turned on and off. The switching time is in the order of 100 nanoseconds, this equates to a maximum frequency of 10 Mhz, and applications will typically operate from a 100 Hz to 100 kHz. Below 100 Hz the human eye will detect a flicker from the light emitted from the LEDs. Between 500 Hz and 20 kHz the circuit may generate audible sound. Dimming is achieved by turning the http://onsemi.com 5 NSI45025AZ, NSV45025AZ Thermal Considerations P D(MAX) + As power in the CCR increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. When the device has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power applications. The maximum dissipation the device can handle is given by: T J(MAX) * T A R qJA Referring to the thermal table on page 2 the appropriate RqJA for the circuit board can be selected. AC Applications The CCR is a DC device; however, it can be used with full wave rectified AC as shown in application notes AND8433/D and AND8492/D and design notes DN05013/D and DN06065/D. Figure 14 shows the basic circuit configuration. Figure 14. Basic AC Application http://onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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