NSV40200LT1G

NSS40200L, NSV40200L 40 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. www.onsemi.com −40 VOLTS 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 80 mW SOT−23 (TO−236) CASE 318 STYLE 6 Features • NSV Prefix for Automotive and Other Applications Requiring • COLLECTOR 3 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MARKING DIAGRAM VA M G G 1 VA = Specific Device Code* M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Specific Device Code, Date Code or overbar orientation and/or location may vary depending upon manufacturing location. This is a representation only and actual devices may not match this drawing exactly. ORDERING INFORMATION Device Package Shipping† NSS40200LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) NSV40200LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 October, 2016 − Rev. 8 1 Publication Order Number: NSS40200L/D NSS40200L, NSV40200L MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −40 Vdc Collector-Base Voltage VCBO −40 Vdc Emitter-Base Voltage VEBO −7.0 Vdc IC −2.0 A Collector Current − Peak ICM −4.0 A Base Current − Peak IBM −300 mA Electrostatic Discharge ESD Rating Collector Current − Continuous HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction−to−Ambient RqJA (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction−to−Ambient RqJA (Note 2) Max Unit 460 3.7 mW mW/°C °C/W 270 540 4.3 mW mW/°C °C/W 230 Total Device Dissipation (Single Pulse < 10 sec) PDsingle (Note 3) 710 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 4 @ 100 mm2, 1 oz. copper traces. 2. FR− 4 @ 500 mm2, 1 oz. copper traces. 3. Thermal response. www.onsemi.com 2 NSS40200L, NSV40200L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −40 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −7.0 Vdc) IEBO Vdc −40 − − −40 − − −7.0 − − − − −0.1 − − −0.1 250 220 180 150 − 300 − − − − − − − − − − −0.010 −0.080 −0.135 −0.135 −0.017 −0.095 −0.170 −0.170 − − −0.900 − − −0.900 100 − − Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (Note 5) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −1.0 A, VCE = −2.0 V) VBE(on) V V V Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − − 325 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − − 62 pF Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) td − − 60 ns Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) tr − − 120 ns Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) ts − − 400 ns Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) tf − − 130 ns SWITCHING CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested. www.onsemi.com 3 NSS40200L, NSV40200L TYPICAL CHARACTERISTICS 0.35 VCE(sat) = 150°C IC/IB = 10 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.25 0.2 25°C 0.15 −55°C 0.1 0.05 −55°C 0.2 0.15 0.1 0.05 0 0.001 0.01 0.1 1.0 10 0.001 0.01 1.0 10 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1.1 150°C (5.0 V) IC/IB = 10 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 800 750 700 650 150°C (2.0 V) 600 550 500 25°C (5.0 V) 450 400 25°C (2.0 V) 350 300 −55°C (5.0 V) 250 200 −55°C (2.0 V) 150 100 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.1 1.0 0.001 10 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.0 1.0 10 mA VCE = −2.0 V VCE, COLLECTOR−EMITTER VOLTAGE (V) VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 25°C 0.25 0 0.9 VCE(sat) = 150°C IC/IB = 100 0.3 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 VCE (V) IC = 500 mA 0.8 100 mA 300 mA 0.6 0.4 0.2 0 0.1 0.001 0.01 0.1 1.0 10 0.01 IC, COLLECTOR CURRENT (A) 0.1 1.0 10 IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region www.onsemi.com 4 100 NSS40200L, NSV40200L TYPICAL CHARACTERISTICS 300 Cobo, OUTPUT CAPACITANCE (pF) 100 Cibo (pF) 275 250 225 200 175 150 125 100 90 Cobo (pF) 80 70 60 50 40 30 20 0 1.0 2.0 3.0 5.0 4.0 6.0 0 10 5.0 15 20 25 30 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 100 ms 10 ms 1s 1 ms 1.0 IC (A) Cibo, INPUT CAPACITANCE (pF) 325 0.1 Thermal Limit 0.01 0.01 0.1 1.0 10 VCE (Vdc) Figure 9. Safe Operating Area www.onsemi.com 5 100 35 NSS40200L, NSV40200L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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