NSV45035JZT1G

Adjustable Constant Current Regulator & LED Driver 45 V, 35 − 70 mA + 15%, 1.5 W Package NSI45035JZ, NSV45035JZ The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs (similar to Constant Current Diode, CCD). The CCR is based on Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 20% of regulation with only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher currents by attaching a resistor between Radj (Pin 3) and the Cathode (Pin 4). The Radj pin can also be left open (No Connect) if no adjustment is required. It requires no external components allowing it to be designed as a high or low−side regulator. The high anodecathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. This device is available in a thermally robust package and is qualified to stringent AEC−Q101 standard, which is lead-free RoHS compliant and uses halogen-free molding compound, and UL94−V0 certified. www.onsemi.com Ireg(SS) = 35 − 70 mA @ Vak = 7.5 V Anode 1 3 Radj 2/4 Cathode SOT−223 CASE 318E STYLE 2 Features • • • • • • • • • • • Robust Power Package: 1.5 Watts Adjustable up to 70 mA Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing − Protecting LEDs AEC-Q101 Qualified and PPAP Capable, UL94−V0 Certified SBT (Self−Biased Transistor) Technology Negative Temperature Coefficient Eliminates Additional Regulation NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Automobile: Chevron Side Mirror Markers, Cluster, Display & • • • • Instrument Backlighting, CHMSL, Map Light AC Lighting Panels, Display Signage, Decorative Lighting, Channel Lettering Switch Contact Wetting Application Note AND8391/D − Power Dissipation Considerations Application Note AND8349/D − Automotive CHMSL MARKING DIAGRAM C AYW AAKG G 1 A A Y W AAK G C Radj = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† NSI45035JZT1G SOT−223 (Pb−Free) 1000/Tape & Reel NSV45035JZT1G SOT−223 (Pb−Free) 1000/Tape & Reel NSV45035JZT3G SOT−223 (Pb−Free) 4000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 December, 2020 − Rev. 3 1 Publication Order Number: NSI45035JZ/D NSI45035JZ, NSV45035JZ MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Anode−Cathode Voltage Reverse Voltage Operating and Storage Junction Temperature Range ESD Rating: Human Body Model Machine Model Symbol Value Vak Max 45 V VR 500 mV TJ, Tstg −55 to +150 ESD Unit °C Class 2 Class C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Steady State Current @ Vak = 7.5 V (Note 1) Voltage Overhead (Note 2) Symbol Min Typ Max Unit Ireg(SS) 29.75 35 40.25 mA Voverhead 1.8 Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) Capacitance @ Vak = 7.5 V (Note 4) C 7.4 pF Capacitance @ Vak = 0 V (Note 4) C 31 pF 1. 2. 3. 4. 30.9 V 42.5 mA Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 35 sec, using FR−4 @ 300 mm2 2 oz. Copper traces, in still air. Voverhead = Vin − VLEDs. Voverhead is typical value for 75% Ireg(SS). Ireg(P) non−repetitive pulse test. Pulse width t ≤ 1.0 msec. f = 1 MHz, 0.02 V RMS. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 5) TA = 25°C Derate above 25°C Symbol Max Unit PD 1008 8.06 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 124 °C/W Thermal Reference, Junction−to−Lead 4 (Note 5) RψJL4 33.3 °C/W PD 1136 9.09 mW mW/°C Total Device Dissipation (Note 6) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 110 °C/W Thermal Reference, Junction−to−Lead 4 (Note 6) RψJL4 33.3 °C/W PD 1238 9.9 mW mW/°C Total Device Dissipation (Note 7) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 101 °C/W Thermal Reference, Junction−to−Lead 4 (Note 7) RψJL4 33.7 °C/W PD 1420 11.36 mW mW/°C RθJA 88 °C/W RψJL4 32.1 °C/W PD 1316 10.53 mW mW/°C RθJA 95 °C/W RψJL4 32.4 °C/W PD 1506 12.05 mW mW/°C Total Device Dissipation (Note 8) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 8) Thermal Reference, Junction−to−Lead 4 (Note 8) Total Device Dissipation (Note 9) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 9) Thermal Reference, Junction−to−Lead 4 (Note 9) Total Device Dissipation (Note 10) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 10) RθJA 83 °C/W Thermal Reference, Junction−to−Lead 4 (Note 10) RψJL4 30.8 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical measurements and method of attachment. 5. FR−4 @ 300 mm2, 1 oz. copper traces, still air. 6. FR−4 @ 300 mm2, 2 oz. copper traces, still air. 7. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 8. FR−4 @ 500 mm2, 2 oz. copper traces, still air. 9. FR−4 @ 700 mm2, 1 oz. copper traces, still air. 10. FR−4 @ 700 mm2, 2 oz. copper traces, still air. www.onsemi.com 2 NSI45035JZ, NSV45035JZ TYPICAL PERFORMANCE CURVES Minimum FR−4 @ 300 mm2, 2 oz Copper Trace, Still Air Ireg(SS), STEADY STATE CURRENT (mA) Ireg, CURRENT REGULATION (mA) 60 50 40 30 20 10 0 −10 TA = 25°C, Radj = Open −20 −10 0 10 20 30 40 50 70 60 40 TA = −40°C −0.0290 mA/°C 30 −0.0278 mA/°C 25 TA = 25°C 20 TA = 85°C 15 TA = 125°C 10 Radj = Open 5 0 DC Test Steady State, Still Air 0 3 4 5 6 7 8 10 9 Figure 2. Steady State Current (Ireg(SS)) vs. Anode−Cathode Voltage (Vak) Ireg(SS), STEADY STATE CURRENT (mA) TA = 25°C 36 35 34 33 Radj = Open 32 31 3.0 Non−Repetitive Pulse Test 4.0 5.0 6.0 7.0 8.0 9.0 10 41 40 39 38 37 36 35 34 33 32 Vak @ 7.5 V TA = 25°C Radj = Open 31 30 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Vak, ANODE−CATHODE VOLTAGE (V) Ireg(P), PULSE CURRENT (mA) Figure 3. Pulse Current (Ireg(P)) vs. Anode−Cathode Voltage (Vak) Figure 4. Steady State Current vs. Pulse Current Testing Ireg(SS), STEADY STATE CURRENT (mA) 37 Ireg, CURRENT REGULATION (mA) 2 Figure 1. General Performance Curve for CCR 37 Vak @ 7.5 V TA = 25°C Radj = Open 36 35 0 1 Vak, ANODE−CATHODE VOLTAGE (V) 38 34 −0.0302 mA/°C 35 Vak, ANODE−CATHODE VOLTAGE (V) 39 Ireg(P), PULSE CURRENT (mA) 45 5 10 15 20 25 30 35 70 Vak @ 7.5 V TA = 25°C 65 60 55 50 45 40 35 30 1 TIME (s) 10 100 Radj (W), MAX POWER 50 mW Figure 6. Ireg(SS) vs. Radj Figure 5. Current Regulation vs. Time www.onsemi.com 3 1000 NSI45035JZ, NSV45035JZ 2300 500 mm2/2 oz POWER DISSIPATION (mW) 2100 300 mm2/2 oz 1900 1700 100 mm2/2 oz 1500 1300 1100 500 mm2/1 oz 900 300 mm2/1 oz 700 500 −40 100 mm2/1 oz −20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) Figure 7. Power Dissipation vs. Ambient Temperature @ TJ = 1505C APPLICATIONS INFORMATION The CCR is a self biased transistor designed to regulate the current through itself and any devices in series with it. The device has a slight negative temperature coefficient, as shown in Figure 2 – Tri Temp. (i.e. if the temperature increases the current will decrease). This negative temperature coefficient will protect the LEDS by reducing the current as temperature rises. The CCR turns on immediately and is typically at 20% of regulation with only 0.5 V across it. The device is capable of handling voltage for short durations of up to 45 V so long as the die temperature does not exceed 150°C. The determination will depend on the thermal pad it is mounted on, the ambient temperature, the pulse duration, pulse shape and repetition. Single LED String The CCR can be placed in series with LEDs as a High Side or a Low Side Driver. The number of the LEDs can vary from one to an unlimited number. The designer needs to calculate the maximum voltage across the CCR by taking the maximum input voltage less the voltage across the LED string (Figures 8 and 9). Figure 8. www.onsemi.com 4 NSI45035JZ, NSV45035JZ Figure 10. Figure 9. Higher Current LED Strings Two or more fixed current CCRs can be connected in parallel. The current through them is additive (Figure 10). www.onsemi.com 5 NSI45035JZ, NSV45035JZ Other Currents the human eye will detect a flicker from the light emitted from the LEDs. Between 500 Hz and 20 kHz the circuit may generate audible sound. Dimming is achieved by turning the LEDs on and off for a portion of a single cycle. This on/off cycle is called the Duty cycle (D) and is expressed by the amount of time the LEDs are on (Ton) divided by the total time of an on/off cycle (Ts) (Figure 13). The adjustable CCR can be placed in parallel with any other CCR to obtain a desired current. The adjustable CCR provides the ability to adjust the current as LED efficiency increases to obtain the same light output (Figure 11). Figure 13. The current through the LEDs is constant during the period they are turned on resulting in the light being consistent with no shift in chromaticity (color). The brightness is in proportion to the percentage of time that the LEDs are turned on. Figure 14 is a typical response of Luminance vs Duty Cycle. Figure 11. 6000 5000 Dimming using PWM ILLUMINANCE (lx) The dimming of an LED string can be easily achieved by placing a BJT in series with the CCR (Figure 12). 4000 3000 2000 Lux Linear 1000 0 0 10 20 30 40 50 60 70 DUTY CYCLE (%) 80 90 100 Figure 14. Luminous Emmitance vs. Duty Cycle Reducing EMI Designers creating circuits switching medium to high currents need to be concerned about Electromagnetic Interference (EMI). The LEDs and the CCR switch extremely fast, less than 100 nanoseconds. To help eliminate EMI, a capacitor can be added to the circuit across R2. (Figure 12) This will cause the slope on the rising and falling edge on the current through the circuit to be extended. The slope of the CCR on/off current can be controlled by the values of R1 and C1. The selected delay / slope will impact the frequency that is selected to operate the dimming circuit. The longer the delay, the lower the frequency will be. The delay time should not be less than a 10:1 ratio of the minimum on time. The frequency is also impacted by the resolution and dimming Figure 12. The method of pulsing the current through the LEDs is known as Pulse Width Modulation (PWM) and has become the preferred method of changing the light level. LEDs being a silicon device, turn on and off rapidly in response to the current through them being turned on and off. The switching time is in the order of 100 nanoseconds, this equates to a maximum frequency of 10 Mhz, and applications will typically operate from a 100 Hz to 100 kHz. Below 100 Hz www.onsemi.com 6 NSI45035JZ, NSV45035JZ steps that are required. With a delay of 1.5 microseconds on the rise and the fall edges, the minimum on time would be 30 microseconds. If the design called for a resolution of 100 dimming steps, then a total duty cycle time (Ts) of 3 milliseconds or a frequency of 333 Hz will be required. www.onsemi.com 7 NSI45035JZ, NSV45035JZ Thermal Considerations P D(MAX) + As power in the CCR increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. When the device has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power applications. The maximum dissipation the device can handle is given by: T J(MAX) * T A R qJA Referring to the thermal table on page 2 the appropriate RqJA for the circuit board can be selected. AC Applications The CCR is a DC device; however, it can be used with full wave rectified AC as shown in application notes AND8433/D and AND8492/D and design notes DN05013/D and DN06065/D. Figure 15 shows the basic circuit configuration. Figure 15. Basic AC Application www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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