NTD600N80S3Z

MOSFET – Power, N-Channel, SUPERFET) III 800 V, 600 mW, 8 A NTD600N80S3Z Description 800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantly improves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies. www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 800 V 600 mW 8A D G Features • • • • • • Typ. RDS(on) = 550 mW Ultra Low Gate Charge (Typ. Qg = 15.5 nC) Low Stored Energy in Output Capacitance (Eoss = 1.74 mJ @ 400 V) 100% Avalanche Tested ESD Improved Capability with Zener Diode RoHS Compliant S POWER MOSFET D G S Applications • • • • • D−PAK TO−252 CASE 369AS Adapters / Chargers LED Lighting AUX Power Audio Industrial Power MARKING DIAGRAM T600N 80S3Z AYWWZZ T600N80S3Z A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2020 December, 2020 − Rev. 0 1 Publication Order Number: NTD600N80S3Z/D NTD600N80S3Z ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise noted) Symbol Parameter VDSS Drain−to−Source Voltage VGS Gate−to−Source Voltage ID Drain Current Value Unit 800 V DC ±20 V AC (f > 1 Hz) ±30 Continuous (TC = 25°C) 8* Continuous (TC = 100°C) 5* Pulsed (Note 1) A IDM Drain Current 21* A EAS Single Pulsed Avalanche Energy (Note 2) 24 mJ IAS Avalanche Current (Note 2) 1.2 A EAR Repetitive Avalanche Energy (Note 1) 0.6 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 10 PD Power Dissipation (TC = 25°C) 60 W 0.48 W/°C −55 to +150 °C 260 °C Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from Case for 10 seconds) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 1.2 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 2 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL RESISTANCE RATINGS Symbol Parameter Value Unit _C/W RqJC Junction−to−Case − Steady State 2.08 RqJA Junction−to−Ambient − Steady State 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Quantity NTD600N80S3Z NTD600N80S3Z TO−252 330 mm 16 mm 2500 Units www.onsemi.com 2 NTD600N80S3Z ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25_C 800 V VGS = 0 V, ID = 1 mA, TJ = 150_C 900 V Drain−to−Source Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V IGSS Gate−to−Body Leakage Current DBVDSS / DTJ 1.1 V/_C 1 mA 1 mA 3.8 V 600 mW 0.8 VDS = 640 V, TC = 125_C VGS = ±20 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.18 mA RDS(on) Static Drain−to−Source On Resistance VGS = 10 V, ID = 4 A 550 Forward Transconductance VDS = 20 V, ID = 4 A 9.4 S VDS = 400 V, VGS = 0 V, f = 250 kHz 725 pF 12 pF gFS 2.2 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 139 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 21 pF Total Gate Charge at 10 V VDD = 400 V, ID = 4 A, VGS = 10 V (Note 4) 15.5 nC 3.1 nC Qg(tot) Qgs Gate−to−Source Gate Charge Qgd Gate−to−Drain “Miller” Charge ESR Equivalent Series Resistance 5.1 nC f = 1 MHz 3.5 W VDD = 400 V, ID = 4 A, VGS = 10 V, Rg = 4.7 W (Note 4) 12.3 ns 5.9 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 39.5 ns Turn-Off Fall Time 8.2 ns tf SOURCE−TO−DRAIN DIODE CHARACTERISTICS Maximum Continuous Source−to−Drain Diode Forward Current 8 A ISM Maximum Pulsed Source−to−Drain Diode Forward Current 21 A VSD Source−to−Drain Diode Forward Voltage VGS = 0 V, ISD = 4 A 1.2 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 2 A, dIF/dt = 100 A/ms IS 137 ns 0.91 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 3 NTD600N80S3Z TYPICAL CHARACTERISTICS 100 TJ = 25°C 20 VDS = 20 V VGS = 20 V 10 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 7.0 V 5.5 V 15 4.0 V 10 5 10 TJ = 25°C TJ = 150°C 0 5 10 15 20 25 30 3 TJ = −55°C 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1.50 1.25 1.00 VGS = 10 V 0.75 VGS = 20 V 0.50 0.25 0.00 0 5 10 15 0.1 0.01 TJ = 150°C TJ = 25°C 0.2 0.4 TJ = −55°C 0.6 0.8 1.0 Figure 3. On Resistance vs. Drain Current Figure 4. Diode Forward Voltage vs. Current VGS, GATE−TO−SOURCE VOLTAGE (V) Ciss 100 0.1 0.01 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1000 1 VGS = 0 V ID, DRAIN CURRENT (A) 10,000 10 10 0.001 0.0 100,000 CAPACITANCE (pF) 2 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE 0 1 Coss f = 250 kHz VGS = 0 V Crss = Cgd Coss = Cds + Cgd Ciss = Cgs + Cgd (Cds = shorted) 0.1 1 10 Crss 100 1000 10 ID = 4.0 A VDD = 130 V 8 VDD = 400 V 6 4 2 0 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5 10 15 QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 1.2 20 NTD600N80S3Z TYPICAL CHARACTERISTICS 3.0 ID = 10 mA RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE NORMALIZED DRAIN−TO−SOURCE BREAKDOWN VOLTAGE 1.2 1.1 1.0 0.9 0.8 −75 −50 −25 0 25 50 75 100 125 ID = 4.0 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 −75 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Normalized BVDSS vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 5 10 ms 10 4 100 ms Eoss (mJ) ID, DRAIN CURRENT (A) 100 1 ms 1 10 ms 0.1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 0.01 DC 1 10 100 2 1 Single Pulse TC = 25°C 1 3 1000 0 0 100 200 300 400 500 600 700 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Safe Operating Area Figure 10. Eoss vs. Drain−to−Source Voltage 8 50% Duty Cycle 20% 0.1 10% 5% PDM 2% 0.01 t1 1% t2 ZqJC(t) = r(t) x RqJC RqJC = 2.08°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 t1, RECTANGULAR PULSE DURATION (sec) Figure 11. Transient Thermal Impedance www.onsemi.com 5 0.1 1 NTD600N80S3Z VGS RL Qg VDD VGS Qgs Qgd DUT IG = Const. Charge Figure 12. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 13. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time NTD600N80S3Z + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13810G DPAK3 (TO−252 3 LD) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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