NTR1P02LT3G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTR1P02L, NVTR01P02L MOSFET – Power, P-Channel, SOT-23 -20 V, -1.3 A These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are DC−DC converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. www.onsemi.com V(BR)DSS RDS(on) Max ID Max −20 V 220 mW @ −4.5 V −1.3 A P−Channel D Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • NVTR Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free and Halide−Free Packages are Available G S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage − Continuous VGS ±12 V Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) ID IDM −1.3 −4.0 A A PD 400 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance − Junction−to−Ambient RqJA 300 °C/W TL 260 °C Total Power Dissipation @ TA = 25°C Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1 2 SOT−23 CASE 318 STYLE 21 P02 M G G 1 Gate 2 Source P02 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† NTR1P02LT1G SOT−23 (Pb−Free) 3000 Tape & Reel NTR1P02LT3G SOT−23 (Pb−Free) 10,000 Tape & Reel NVTR01P02LT1G SOT−23 (Pb−Free) 3000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2001 June, 2019 − Rev. 14 1 Publication Order Number: NTR1P02LT1/D NTR1P02L, NVTR01P02L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Test Condition Symbol Min Drain−to−Source Breakdown Voltage (VGS = 0 V, ID = −10 mA) V(BR)DSS −20 Zero Gate Voltage Drain Current (VDS = −16 V, VGS = 0 V) (VDS = −16 V, VGS = 0 V, TJ = 125°C) IDSS −1.0 −10 mA Gate−Body Leakage Current (VGS = ± 12 V, VDS = 0 V) IGSS ±100 nA Gate Threshold Voltage (VDS = VGS, ID = −250 mA) VGS(th) −1.0 −1.25 V Static Drain−to−Source On−Resistance (VGS = −4.5 V, ID = −0.75 A) (VGS = −2.5 V, ID = −0.5 A) rDS(on) 0.140 0.200 0.22 0.35 W Input Capacitance (VDS = −5.0 V) Ciss 225 Output Capacitance (VDS = −5.0 V) Coss 130 Transfer Capacitance (VDS = −5.0 V) Crss 55 td(on) 7.0 tr 15 td(off) 18 Parameter Typ Max Unit OFF CHARACTERISTICS V ON CHARACTERISTICS (Note 1) −0.7 DYNAMIC CHARACTERISTICS pF SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VGS = −4.5 V, VDD = −5.0 V, ID = −1.0 A, RL = 5.0 W, RG = 6.0 W) Fall Time Total Gate Charge (VDS = −16 V, ID = −1.5 A, VGS = −4.5 V) tf 9 QT 3.1 ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2) (VGS = 0 V, IS = −0.6 A) IS −0.6 ISM −0.75 VSD −1.0 Reverse Recovery Time trr 16 ta 11 tb 5.5 QRR 8.5 (IS = −1.0 A, VGS = 0 V, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge A V ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2 NTR1P02L, NVTR01P02L 2.5 3 TJ = 25°C 2.2 V VDS ≥ 5 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 3.0 2.0 V VGS = 2.4 V to 3.0 V 2.0 1.5 1.8 V 1.0 1.6 V 0.5 0 1.4 V 1.2 V TJ = 25°C 1 TJ = 100°C 0 5 4 1 2 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0 2 1.0 1.5 2.0 VGS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID = 1.0 A TJ = 25°C 0.25 0.20 0.15 0 2 6 4 10 8 2.5 Figure 2. Transfer Characteristics 0.30 0.30 TJ = 25°C 0.25 VGS = 2.5 V 0.20 VGS = 4.5 V 0.15 0.10 0.05 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 1.6 1.4 VGS = 0 V ID = 0.75 A VGS = 4.5 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.10 TJ = −55°C 1.2 1.0 0.8 TJ = 100°C 10 1 0.1 0.6 0.4 −50 TJ = 125°C 100 TJ = 25°C −25 0 25 50 75 100 125 150 0.01 1 6 11 16 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 1 NTR1P02L, NVTR01P02L VGS, GATE−TO−SOURCE VOLTAGE (V) 400 C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C 300 Ciss 200 Coss 100 Crss 0 0 5 10 15 5 4 3 Qgs Qgd 2 VDS = 16 V ID = 1.5 A TJ = 25°C 1 0 25 20 QT 0.5 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.5 2.0 2.5 3.0 3.5 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 1.0 VDD = 48 V ID = 9 A VGS = 4.5 V VGS = 0 V TJ = 25°C IS, SOURCE CURRENT (A) 0.9 td(off) tf tr 10 td(on) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 1 10 0 100 0 0.5 VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ID, DRAIN CURRENT (A) t, TIME (ns) 1.0 10 100 ms 1 0.1 0.01 0.001 1 ms 10 ms VGS = 12 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 1.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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