NTR4003NT3G

NTR4003N, NVR4003N Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit • • • • • • Design Low Gate Charge for Fast Switching ESD Protected Gate SOT−23 Package Provides Excellent Thermal Performance Minimum Breakdown Voltage Rating of 30 V NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) TYP ID MAX 1.0 W @ 4.0 V 30 V 0.56 A 1.5 W @ 2.5 V N−Channel 3 Applications • Notebooks: ♦ Level Shifters Logic Switches ♦ Low Side Load Switches Portable Applications ♦ • 1 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) TA = 25°C t < 10 s Value Unit VDSS 30 V VGS ±20 V ID 0.5 A TA = 85°C Steady State Continuous Drain Current (Note 1) Symbol TA = 25°C 0.37 Power Dissipation (Note 1) Pulsed Drain Current 0.69 W ID 0.56 A 0.40 t