NTR4171PT1G

NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • • • • Low RDS(on) at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device www.onsemi.com V(BR)DSS Applications • Load Switch • Optimized for Battery and Load Management Applications in −30 V Portable Equipment like Cell Phones, PDA’s, Media Players, etc. Symbol Value Unit Drain−to−Source Voltage VDSS −30 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C −2.2 TA = 85°C −1.5 t≤5s TA = 25°C Steady State ID 75 mW @ −10 V −2.2 A 110 mW @ −4.5 V −1.8 A 150 mW @ −2.5 V −1.0 A S G A D −3.5 0.48 TA = 25°C PD t≤5s Pulsed Drain Current ID MAX P−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter RDS(on) MAX W 1.25 3 IDM −15.0 TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS −1.0 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C tp = 10 ms Operating Junction and Storage Temperature A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter MARKING DIAGRAM/ PIN ASSIGNMENT Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 260 °C/W Junction−to−Ambient − t ≤ 10 s (Note 1) RqJA 100 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 3 Drain 1 2 SOT−23 CASE 318 STYLE 21 TRFMG G 1 Gate 2 Source TRF = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTR4171PT1G SOT−23 (Pb−Free) 3000/Tape & Reel NTR4171PT3G SOT−23 (Pb−Free) 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 October, 2016 − Rev. 2 1 Publication Order Number: NTR4171P/D NTR4171P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min −30 Typ Max Units OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS /TJ ID = −250 mA, Reference to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −24 V, TJ = 25°C VGS = 0 V, VDS = −24 V, TJ = 85°C −1.0 −5.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "12 V ±0.1 mA VGS(TH) VGS = VDS, ID = −250 mA −1.4 V V 24 mV/°C ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On−Resistance RDS(on) Forward Transconductance gFS −0.7 −1.15 3.5 mV/°C mW VGS = −10 V, ID = −2.2 A 50 75 VGS = −4.5 V, ID = −1.8 A 60 110 VGS = −2.5 V, ID = −1.0 A 90 150 VDS = −5.0 V, ID = −2.2 A 7.0 S 720 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 0 V, f = 1.0 MHz, VDS = −15 V 95 65 nC 15.6 VGS = −10 V, VDS = −15 V, ID = −3.5 A 0.7 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.6 Total Gate Charge QG(TOT) 7.4 Threshold Gate Charge QG(TH) 0.7 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.6 RG 6.1 W 8.0 ns Gate Resistance VGS = −4.5 V, VDS = −15 V, ID = −3.5 A 1.6 nC 1.6 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = −10 V, VDS = −15 V, ID = −3.5 A, RG = 6 W 11 32 tf 14 td(on) 9.0 tr td(off) VGS = −4.5 V, VDS = −15 V, ID = −3.5 A, RG = 6 W tf ns 16 25 22 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time VGS = 0 V, IS = −1.0 A, TJ = 25°C −0.8 tRR 14 Charge Time ta 10 Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = −1.0 A, dISD/dt = 100 A/ms QRR −1.2 V ns 4.0 8.0 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% 4. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 NTR4171P TYPICAL CHARACTERISTICS 10 10 −4.5 V 6.0 5.0 −2.2 V 4.0 3.0 VGS = −2.0 V 2.0 0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 4.0 4.5 5.0 7.0 6.0 5.0 TJ = 25°C 4.0 3.0 2.0 TJ = 125°C 1.0 1.25 1.5 TJ = −55°C 1.75 2.0 2.25 2.75 2.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.30 TJ = 25°C ID = −2.2 A 0.25 0.20 0.15 0.10 0.05 0 VDS = −5 V 8.0 1.0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 7.0 1.0 0 RDS(on), NORMALIZED DRAIN−TO−SOURCE RESISTANCE (W) −2.5 V −10 V 8.0 9.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 3.0 0.30 −2.0 V −2.2 V TJ = 25°C 0.25 0.20 −2.5 V 0.15 0.10 −4.5 V 0.05 0 VGS = −10 V 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 −VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.6 1.5 1.4 VGS = −4.5 V ID = −2.2 A IDSS, LEAKAGE (nA) −ID, DRAIN CURRENT (A) 9.0 1.3 TJ = 150°C 1000 1.2 1.1 1.0 0.9 TJ = 125°C 100 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 10 150 0 5.0 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTR4171P VGS = 0 V TJ = 25°C f = 1 MHz Ciss 800 700 600 500 400 300 Coss 200 100 C rss 0 0 t, TIME (ns) 1000 5.0 10 15 20 25 30 −VDS −VGS 12 8.0 10 8.0 6.0 4.0 VDS = −15 V TJ = 25°C ID = −3.5 A QGD QGS 6.0 4.0 2.0 0 2.0 0 2.0 4.0 6.0 8.0 10 12 0 16 14 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 VGS = −10 V VDD = −15 V ID = −3.5 A td(off) tf tr 10 td(on) 1.0 10 TJ = 125°C 100 TJ = 150°C 1.0 TJ = 25°C 0.1 TJ = −55°C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1.5 30 ID = −250 mA 1.4 25 1.3 1.2 POWER (W) −VGS(th) (V) 14 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 1.0 16 QT 10 −IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 900 12 1.1 1.0 0.9 0.8 20 15 10 5.0 0.7 0.6 −50 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1100 1000 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS −25 0 25 50 75 100 125 0 150 0.001 0.01 0.1 1.0 10 100 TJ, TEMPERATURE (°C) SINGLE PULSE TIME (s) Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 1000 NTR4171P TYPICAL CHARACTERISTICS −ID, DRAIN CURRENT (A) 100 10 VGS = −12 V Single Pulse TC = 25°C 10 ms 100 ms 1.0 1 ms 10 ms 0.1 0.01 RDS(on) Limit Thermal Limit Package Limit 0.1 1.0 dc 10 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) Figure 13. Maximum Rated Forward Biased Safe Operating Area 1.0 Duty Cycle = 0.5 0.2 0.1 0.01 0.1 0.05 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 14. FET Thermal Response www.onsemi.com 5 10 100 1000 NTR4171P PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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