PZT2222AT3G

PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features • PNP Complement is PZT2907AT1 • The SOT−223 Package Can be Soldered Using Wave or Reflow • SOT−223 Package Ensures Level Mounting, Resulting in Improved • • • • www.onsemi.com SOT−223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT 4 Thermal Conduction, and Allows Visual Inspection of Soldered Joints The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die Available in 12 mm Tape and Reel S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 1 COLLECTOR 2, 4 BASE 1 3 EMITTER Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage (Open Collector) VEBO 6.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation up to TA = 25°C (Note 1) PD Storage Temperature Range Tstg − 65 to +150 °C Junction Temperature°Range TJ − 55 to +150 °C W 1.5 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2. MARKING DIAGRAM AYM P1FG G A = Assembly Location Y = Year M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Symbol Value Unit RqJA 83.3 °C/W TL 260 10 °C Sec Thermal Resistance, Junction−to−Ambient Lead Temperature for Soldering, 0.0625″ from case Time in Solder Bath Package Shipping† PZT2222AT1G SOT−223 (Pb−Free) 1,000 Tape & Reel SPZT2222AT1G SOT−223 (Pb−Free) 1,000 Tape & Reel PZT2222AT3G SOT−223 (Pb−Free) 4,000 Tape & Reel THERMAL CHARACTERISTICS Rating 3 SOT−223 (TO−261) CASE 318E−04 STYLE 1 MAXIMUM RATINGS Rating 2 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2018 − Rev. 11 1 Publication Order Number: PZT2222AT1/D PZT2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO °75° − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc) IBEX − 20 nAdc Collector−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc) ICEX − 10 nAdc Emitter−Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO − 100 nAdc Collector−Base Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125°C) ICBO − − 10 10 nAdc mAdc 35 50 70 35 100 50 40 − − − − 300 − − − − 0.3 1.0 0.6 − 1.2 2.0 2.0 0.25 8.0 1.25 − − 8.0x10−4 4.0x10−4 50 75 300 375 5.0 25 35 200 − 4.0 300 − OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = − 55°C) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) hFE Collector−Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base−Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) Input Impedance° (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) °hie° Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre Small−Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) ť hfe ť Output Admittance° (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) °hoe° F Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz) − Vdc Vdc kW − − mmhos dB DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc − 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce − 25 pF (VCC = 30 Vdc, IC = 150 mAdc, IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc) Figure 1 td − 10 ns tr − 25 (VCC = 30 Vdc, IC = 150 mAdc, IB(on) = IB(off) = 15 mAdc) Figure 2 ts − 225 tf − 60 SWITCHING TIMES (TA = 25°C) Delay Time Rise Time Storage Time Fall Time www.onsemi.com 2 ns PZT2222A VCC Vi R2 90% Vo R1 10% 0 tr Vi D.U.T. tp Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time Vi = − 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 W, R2 = 200 W. PULSE GENERATOR: PULSE DURATION RISE TIME DUTY FACTOR OSCILLOSCOPE: INPUT IMPEDANCE INPUT CAPACITANCE RISE TIME tp 3 200 ns tr 3 2 ns d = 0.02 Zi > 100 kW Ci < 12 pF tr < 5 ns VCC Vi +16.2 V R2 D.U.T. R1 0 R3 Vi TIME Vo OSCILLOSCOPE D1 R4 -13.8 V tf 100 ms VBB Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time TYPICAL CHARACTERISTICS 1.2 1 0.1 0.01 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 TA = 25°C TA = −55°C TA = 150°C 0.1 1 10 100 1000 IC/IB = 10 1.0 TA = −55°C 0.9 0.8 0.7 TA = 25°C 0.6 0.5 0.4 0.3 0.2 TA = 150°C 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Collector Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current www.onsemi.com 3 PZT2222A TYPICAL CHARACTERISTICS 2.0 100 1.1 1.0 TA = −55°C 0.1 1 10 100 1000 0.3 0.2 600 mA 300 mA 100 mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 Figure 5. DC Current Gain vs. Collector Current Figure 6. Saturation Region 100 100 VCE = 2 V C, CAPACITANCE (pF) TA = 25°C 0.5 0.4 1.4 IB, BASE CURRENT (mA) 0.8 0.6 1.6 IC, COLLECTOR CURRENT (mA) 0.9 TA = −55°C 0.7 TA = 25°C 1.8 10 mA TA = 25°C 10 VBE(ON), BASE−EMITTER ON VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) TA = 150°C Cibo Cobo 10 TA = 150°C 0.1 1 10 100 1 1000 0.1 1 10 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 7. Base−Emitter Turn−On Voltage vs. Collector Current Figure 8. Capacitance 1000 IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN VCE = 6 V IC = 1 mA 1000 0.0001 1s 0.1 0.01 100 0.001 10 Single Pulse Test at TA = 25°C 1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. 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