PZTA42T1G

PZTA42T1G High Voltage Transistor Surface Mount NPN Silicon www.onsemi.com Features • PZTA42T1G is Complement to PZTA92T1G • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT COLLECTOR 2, 4 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Collector−Emitter Voltage (Open Base) VCEO Collector−Base Voltage (Open Emitter) VCBO Emitter−Base Voltage (Open Collector) VEBO Collector Current (DC) IC Value BASE 1 Unit Vdc 300 EMITTER 3 Vdc 300 4 Vdc 6.0 500 1 3 W SOT−223 CASE 318E STYLE 1 Total Power Dissipation @ TA = 25°C (Note 1) PD Storage Temperature Range Tstg −65 to +150 °C Junction Temperature TJ 150 °C 1.5 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. AYW P1D G G 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (Note 2) 2 mAdc Symbol RqJA Max Unit °C/W 83.3 2. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. P1D A Y W G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† PZTA42T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel SPZTA42T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 June, 2017 − Rev. 12 1 Publication Order Number: PZTA42T1/D PZTA42T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristics Min Max 300 − 300 − 6.0 − − 0.1 − 0.1 25 40 40 − − − 50 − − 3.0 − 0.5 − 0.9 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO Emitter-Base Cutoff Current (VBE = 6.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) hFE − DYNAMIC CHARACTERISTICS Current-Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Feedback Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Cre Collector-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) MHz pF Vdc Vdc 3. Pulse Test Conditions, tp = 300 ms, d 0.02. 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 -55°C 20 0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain www.onsemi.com 2 100 PZTA42T1G 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) 1000 Figure 2. Capacitance 1.4 V, VOLTAGE (V) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 0.6 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 1 100 IC, COLLECTOR CURRENT (A) f T, CURRENT−GAIN — BANDWIDTH (MHz) Figure 3. “ON” Voltages 10 0.1 1.0 s 0.1 10 ms 0.01 0.001 1 10 100 1 IC, COLLECTOR CURRENT (mA) 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 4. Current Gain Bandwidth Product Figure 5. Safe Operating Area www.onsemi.com 3 1000 PZTA42T1G PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE DIM A A1 b b1 c D E e e1 L L1 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A q L MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − L1 SOLDERING FOOTPRINT* STYLE 1: PIN 1. 2. 3. 4. MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 mm Ǔ ǒinches 1.5 SCALE 6:1 0.059 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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