SBCP53T1G

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or reflow. • • • The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1G = AH BCP53−10T1G = AH−10 BCP53−16T1G = AH−16 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO −80 Vdc Collector−Base Voltage VCBO −100 Vdc Emitter−Base Voltage Rating VEBO −5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Temperature Range TJ, Tstg °C −65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Surface Mounted) RqJA 83.3 °C/W Lead Temperature for Soldering, 0.0625″ from case Time in Solder Bath TL °C s 260 10 www.onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2, 4 1 BASE EMITTER 3 MARKING DIAGRAM 4 1 AYW XXXXXG G 2 3 SOT−223 CASE 318E STYLE 1 A Y W XXXXX G 1 = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Shipping† Device Package BCP53T1G SOT−223 (Pb−Free) 1000/Tape & Reel SBCP53−10T1G SOT−223 (Pb−Free) 1000/Tape & Reel BCP53−10T1G SOT−223 (Pb−Free) 1000/Tape & Reel SBCP53−10T1G SOT−223 (Pb−Free) 1000/Tape & Reel BCP53−16T1G SOT−223 (Pb−Free) 1000/Tape & Reel SBCP53−16T1G SOT−223 (Pb−Free) 1000/Tape & Reel BCP53−16T3G SOT−223 (Pb−Free) 4000/Tape & Reel NSVBCP53−16T3G SOT−223 (Pb−Free) 4000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 June, 2018 − Rev. 13 1 Publication Order Number: BCP53T1/D BCP53 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max −100 − − −80 − − −100 − − −5.0 − − − − −100 − − −100 Unit OFF CHARACTERISTICS Collector−Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO Collector−Emitter Breakdown Voltage (IC = −100 mAdc, RBE = 1.0 kW) V(BR)CER Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = − 30 Vdc, IE = 0) ICBO Emitter−Base Cutoff Current (VEB = − 5.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = − 5.0 mAdc, VCE = − 2.0 Vdc) All Part Types (IC = −150 mAdc, VCE = − 2.0 Vdc) BCP53, SBCP53 BCP53−10, SBCP53−10 BCP53−16, SBCP53−16, NSVBCP53−16 (IC = − 500 mAdc, VCE = − 2.0 Vdc) All Part Types hFE Collector−Emitter Saturation Voltage (IC = − 500 mAdc, IB = − 50 mAdc) VCE(sat) Base−Emitter On Voltage (IC = − 500 mAdc, VCE = − 2.0 Vdc) VBE(on) − 25 − − 40 63 100 − − − 250 160 250 25 − − − − −0.5 − − −1.0 − 50 − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = − 5.0 Vdc, f = 35 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BCP53 Series 2.0 IC/IB = 10 200 BCP53, −10, −16 +150°C 1.6 150°C, 5 V 180 1.8 1.4 hFE, DC CURRENT GAIN Vce(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) TYPICAL CHARACTERISTICS −55°C 1.2 1.0 +25°C 0.8 0.6 0.4 150°C, 2 V 160 140 25°C, 5 V 120 25°C, 2 V 100 80 −55°C, 5 V 60 −55°C, 2 V 40 20 0 0.2 0 0.001 0.01 0.1 1 0.001 10 0.01 IC, COLLECTOR CURRENT (A) 300 150°C, 5 V 150°C, 5 V 150°C, 2 V 100 25°C, 2 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 160 25°C, 5 V 80 60 −55°C, 5 V 40 −55°C, 2 V 10 Figure 2. DC Current Gain vs. Collector Current (BCP53) 180 120 1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 140 0.1 250 150°C, 2 V 200 25°C, 5 V 150 25°C, 2 V 100 −55°C, 5 V −55°C, 2 V 50 20 0 0 0.001 0.1 1 0.001 10 1 Figure 3. DC Current Gain vs. Collector Current (BCP53−10) Figure 4. DC Current Gain vs. Collector Current (BCP53−16) IC/IB = 10 0.9 −55°C 0.8 0.7 +25°C 0.5 +150°C 0.001 IC/IB = 10 0.1 1 10 BCP53 −16 1.1 1.0 0.9 −55°C 0.8 0.7 +25°C 0.6 0.5 +150°C 0.4 0.01 10 1.2 BCP53, −10 1.0 0.4 0.1 IC, COLLECTOR CURRENT (A) 1.1 0.6 0.01 IC, COLLECTOR CURRENT (A) Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V) Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V) 1.2 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. BCP53, −10 Base Emitter Saturation Voltage vs. Collector Current Figure 6. BCP53−16 Base Emitter Saturation Voltage vs. Collector Current www.onsemi.com 3 10 BCP53 Series TYPICAL CHARACTERISTICS 1.2 1.1 1.0 0.9 0.8 −55°C 0.7 0.6 +25°C 0.5 0.4 0.3 +150°C 0.001 1.0 0.01 0.1 1.0 0.9 −55°C 0.8 0.7 +25°C 0.6 0.5 +150°C 0.4 0.3 0.2 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 7. BCP53, −10 Base Emitter Turn−On Voltage vs. Collector Current VBE(on) Figure 8. BCP53−16 Base Emitter Turn−On Voltage vs. Collector Current IC = 1.0 A 110 IC = 1.5 A BCP53−10 100 0.8 IC = 500 mA 0.7 0.6 IC = 100 mA 0.5 0.4 0.3 90 BCP53 80 70 60 BCP53−16 0.2 50 0.1 0 40 0.001 0.01 0.1 0 1 1 2 4 VOLTAGE (V) Figure 9. BCP53, −10, −16 Saturation Region Figure 10. Input Capacitance 10 Ic, COLLECTOR CURRENT (A) 20 BCP53−10 15 BCP53 10 BCP53−16 5 3 Ib, BASE CURRENT (A) 25 CAPACITANCE (pF) BCP53 −16 Vce = 2 V 1.1 IC, COLLECTOR CURRENT (A) BCP53, −10, −16 0.9 1 CAPACITANCE (pF) Vce, COLLECTOR−EMITTER VOLTAGE (V) BCP53, −10 Vce = 2 V Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V) Vbe(on), BASE EMITTER TURN−ON VOLTAGE (V) 1.2 0 5 100 ms 10 ms 1 ms 1s 1 CONTINUOUS THERMAL LIMIT 0.1 SINGLE PULSE TEST AT Tamb = 25°C 0.01 0 2 4 6 8 10 12 14 16 18 20 0.1 1 10 VOLTAGE (V) Vce, COLLECTOR EMITTER VOLTAGE (V) Figure 11. Output Capacitance Figure 12. Standard Operating Area www.onsemi.com 4 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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