DATA SHEET
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General Purpose Transistors
COLLECTOR
3
NPN Silicon
MMBT2222L, MMBT2222AL,
SMMBT2222AL
1
BASE
2
EMITTER
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
•
Compliant
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
3
1
2
SOT−23
CASE 318
STYLE 6
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Symbol
MMBT2222L
MMBT2222AL, SMMBT2222AL
Collector −Base Voltage
Collector Current − Peak (Note 3)
Vdc
VCBO
Vdc
VEBO
Vdc
5.0
6.0
IC
600
mAdc
ICM
1100
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
MARKING DIAGRAM
xxx M G
G
60
75
MMBT2222L
MMBT2222AL, SMMBT2222AL
Collector Current − Continuous
Unit
30
40
MMBT2222L
MMBT2222AL, SMMBT2222AL
Emitter −Base Voltage
Value
VCEO
PD
RqJA
1
xxx = 1P or M1B
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
PD
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
© Semiconductor Components Industries, LLC, 1994
August, 2021 − Rev. 12
1
Publication Order Number:
MMBT2222LT1/D
MMBT2222L, MMBT2222AL, SMMBT2222AL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
30
40
−
−
Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
60
75
−
−
Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
5.0
6.0
−
−
Vdc
−
10
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A, SMMBT2222A
ICEX
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
MMBT2222
MMBT2222A, SMMBT2222A
MMBT2222
MMBT2222A, SMMBT2222A
ICBO
−
−
−
−
0.01
0.01
10
10
mAdc
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
MMBT2222A, SMMBT2222A
IEBO
−
100
nAdc
IBL
−
20
nAdc
35
50
75
35
100
50
30
40
−
−
−
−
300
−
−
−
MMBT2222
MMBT2222A, SMMBT2222A
−
−
0.4
0.3
MMBT2222
MMBT2222A, SMMBT2222A
−
−
1.6
1.0
MMBT2222
MMBT2222A, SMMBT2222A
−
0.6
1.3
1.2
MMBT2222
MMBT2222A, SMMBT2222A
−
−
2.6
2.0
250
300
−
−
−
8.0
−
−
30
25
2.0
0.25
8.0
1.25
−
−
8.0
4.0
50
75
300
375
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 4)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 4)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 4)
Collector −Emitter Saturation Voltage (Note 4)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage (Note 4)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
hFE
MMBT2222A only
MMBT2222
MMBT2222A, SMMBT2222A
−
VCE(sat)
Vdc
VBE(sat)
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 5)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
MMBT2222
MMBT2222A, SMMBT2222A
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MHz
Cobo
pF
Cibo
MMBT2222
MMBT2222A, SMMBT2222A
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
MMBT2222A, SMMBT2222A
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
MMBT2222A, SMMBT2222A
Small −Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
MMBT2222A, SMMBT2222A
pF
hie
kW
X 10− 4
hre
hfe
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2
−
MMBT2222L, MMBT2222AL, SMMBT2222AL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
5.0
25
35
200
−
150
−
4.0
Unit
SMALL− SIGNAL CHARACTERISTICS
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
MMBT2222A, SMMBT2222A
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A, SMMBT2222A
mmhos
hoe
rb, Cc
Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
ps
NF
dB
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
(VCC = 30 Vdc, VBE(off) = − 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
10
tr
−
25
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
60
Storage Time
Fall Time
ns
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
5. fT is defined as the frequency at which |hfe| extrapolates to unity.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
+16 V
200
+16 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
200
0
0
-2 V
1 kW
< 2 ns
1k
-14 V
CS* < 10 pF
< 20 ns
CS* < 10 pF
1N914
-4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
hFE , DC CURRENT GAIN
1000
700
500
TJ = 125°C
300
200
25°C
100
70
50
-55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
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3
50
70
100
200
300
500 700 1.0 k
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
MMBT2222L, MMBT2222AL, SMMBT2222AL
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
200
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts - 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
500
Figure 5. Turn −On Time
200
300
500
10
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
6.0
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn −Off Time
10
8.0
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, TIME (ns)
t, TIME (ns)
100
70
50
4.0
2.0
IC = 50 mA
100 mA
500 mA
1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
0
50
50 100
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
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4
50 k 100 k
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
MMBT2222L, MMBT2222AL, SMMBT2222AL
30
CAPACITANCE (pF)
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3
20 30
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
50
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
Figure 9. Capacitances
70 100
IC/IB = 10
1.2
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
50
1.3
IC/IB = 10
150°C
0.1
−55°C
25°C
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.01
0.001
0.01
0.1
0.001
1
0.01
1
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
1.2
+0.5
VCE = 1 V
0
1.0
0.9
COEFFICIENT (mV/ °C)
VBE(on), BASE−EMITTER VOLTAGE (V)
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 10. Current−Gain Bandwidth Product
1
1.1
2.0
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
RqVC for VCE(sat)
-0.5
-1.0
-1.5
RqVB for VBE
-2.0
0.3
0.2
-2.5
0.001
0.01
0.1
1
0.1 0.2
IC, COLLECTOR CURRENT (A)
0.5
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 14. Temperature Coefficients
Figure 13. Base Emitter Voltage vs. Collector
Current
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5
500
MMBT2222L, MMBT2222AL, SMMBT2222AL
10
10 ms
100 ms
1
1 ms
1s
IC (A)
Thermal Limit
0.1
0.01
0.001
Single Pulse Test
@ TA = 25°C
0.01
0.1
1
10
100
VCE (Vdc)
Figure 15. Safe Operating Area
ORDERING INFORMATION
Device
MMBT2222LT1G
MMBT2222ALT1G,
SMMBT2222ALT1G
MMBT2222LT3G
MMBT2222ALT3G,
SMMBT2222ALT3G
Specific Marking Code
Package
Shipping†
M1B
SOT−23
(Pb−Free)
3000 / Tape & Reel
1P
SOT−23
(Pb−Free)
3000 / Tape & Reel
M1B
SOT−23
(Pb−Free)
10,000 / Tape & Reel
1P
SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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