SMMBTA56LT1G

MMBTA55LSeries, MMBTA56LSeries, SMMBTA56LSeries Driver Transistors PNP Silicon www.onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 CASE 318 STYLE 6 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MMBTA55 MMBTA56, SMMBTA56 VCEO Collector −Base Voltage MMBTA55 MMBTA56, SMMBTA56 VCBO Emitter −Base Voltage VEBO −4.0 Vdc IC −500 mAdc Collector Current − Continuous Vdc −60 −80 1 BASE 2 EMITTER Vdc −60 −80 MARKING DIAGRAM 2xx M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 RqJA PD °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 1994 April, 2018 − Rev. 9 1 PD 1 2xx = Device Code x = H for MMBTA55LT1G xx = GM for MMBTA56LT1G, SMMBTA56LT1G M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: MMBTA55LT1/D MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) MMBTA55 MMBTA56, SMMBTA56 V(BR)CEO Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = −60 Vdc, IB = 0) ICES Collector Cutoff Current (VCB = −60 Vdc, IE = 0) MMBTA55 (VCB = −80 Vdc, IE = 0) MMBTA56, SMMBTA56 ICBO Vdc −60 −80 − − −4.0 − − −0.1 Vdc mAdc mAdc − −0.1 − −0.1 100 100 − − − −0.25 − −1.2 50 − ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −100 mAdc, IB = −10 mAdc) VCE(sat) Base −Emitter On Voltage (IC = −100 mAdc, VCE = −1.0 Vdc) VBE(on) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4) (IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME TURN-OFF TIME VCC -1.0 V VCC +VBB +40 V 5.0 ms 100 +40 V RL 100 RL OUTPUT +10 V RB Vin 0 tr = 3.0 ns OUTPUT * CS t 6.0 pF 5.0 mF RB Vin * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits www.onsemi.com 2 200 100 VCE = -2.0 V TJ = 25°C TJ = 25°C 70 50 100 C, CAPACITANCE (pF) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series 70 50 Cibo 30 20 Cobo 10 30 7.0 20 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) 5.0 -0.1 -0.2 -200 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current−Gain — Bandwidth Product 1.0 k 700 500 TJ = 125°C VCE = -1.0 V ts h FE, DC CURRENT GAIN t, TIME (ns) Figure 3. Capacitance 400 300 200 100 70 50 tf VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 30 20 10 -5.0 -7.0 -10 200 25°C -55°C 100 80 60 tr td @ VBE(off) = -0.5 V -50 -70 -100 -200 -300 -20 -30 IC, COLLECTOR CURRENT (mA) 40 -0.5 -1.0 -2.0 -500 Figure 4. Switching Time -50 -100 -200 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -500 Figure 5. DC Current Gain 1 1.1 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) -50 -100 150°C 25°C −55°C 0.1 IC/IB = 10 1.0 0.9 0.8 −55°C 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.01 0.2 0.001 0.01 0.1 1 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 6. Collector Emitter Saturation Voltage vs. Collector Current Figure 7. Base Emitter Saturation Voltage vs. Collector Current www.onsemi.com 3 1 1.1 VCE = 1 V 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 R qVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.2 0.001 0.01 0.1 1 -1.0 TJ = 25°C -0.8 IC = -100 mA IC = -50 mA IC = -250 mA IC = -500 mA -0.6 -0.4 IC = -10 mA -0.2 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 8. Base Emitter Voltage vs. Collector Current Figure 9. Collector Saturation Region -0.8 1 IC, COLLECTOR CURRENT (A) VBE(on), BASE−EMITTER VOLTAGE (V) MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series -1.2 -1.6 RqVB for VBE -2.0 -2.4 -2.8 -0.5 -1.0 -2.0 -50 1 mS 1S 100 mS 10 mS 0.1 Thermal Limit 0.01 0.001 -5.0 -10 -20 -50 -100 -200 0.1 -500 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 10. Base−Emitter Temperature Coefficient Figure 11. Safe Operating Area ORDERING INFORMATION Package Type Shipping† MMBTA55LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBTA55LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBTA56LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBTA56LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBTA56LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SMMBTA56LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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