100NDD

Naina Semiconductor Ltd. emiconductor Diode – Diode Module Features • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 and M2 package 100NDD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms 2 Symbol IF(AV) IF(RMS) IFSM It 2 Values 100 157 2000 18 Units A A A kA s M 1 & M2 PACKAGE 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 to +125 0.35 0 Units 0 C C/W Electrical Characteristics (TA = 25OC unless otherwise noted) unless Parameter Maximum average on-state current, 180 C sinusoidal Maximum repetitive peak reverse voltage range peak Forward voltage drop RMS isolation voltage 0 Symbol IT(max) VRRM VFM VISO Values 100 200 to 1600 1.35 2500 Units A V V V 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com Naina Semiconductor Ltd. emiconductor 100NDD A LL DIMENSIONS ARE IN MM Diode Configuration 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com