10A8

Naina Semiconductor Ltd. emiconductor Silicon Rectifier, 10.0A Features • Diffused junction • Low cost • Low reverse leakage current • High current capability & low forward voltage drop • Plastic material carrying UL recognition 94V-0 • Polarity: Color Band denotes Cathode • Lead free finish 10A05 - 10A10 A05 Thermal and Mechanical Specifications (TA = 250C unless otherwise specified) Parameters Maximum operating junction temperature range Maximum storage temperature range Typical thermal resistance junction to ambient Approximate weight Symbol TJ TStg RθJA W Values - 55 to + 125 - 55 to + 150 10 0 Units 0 C C J EDEC R -6 0 C/W g 2.1 Electrical Characteristics (TA = 250C unless otherwise specified) unless Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output current @ TA = 500C Peak forward surge current (8.3ms) single half sine-wave superimposed on rated load Maximum DC forward voltage drop per element @ 10 A Typical junction capacitance Maximum DC reverse TA = 250C current at rated DC TA = 1000C blocking voltage Symbol 10A05 10A1 VRRM VRMS VDC IF(AV) IFSM VF CJ IR 50 35 50 100 70 100 10A2 10A4 10A6 10A8 10A10 200 140 200 400 280 400 10 600 1.0 150 10 600 420 600 800 560 800 1000 700 1000 Units V V V A A V pF µA 100 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 Sector 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com Naina Semiconductor Ltd. emiconductor 10A05 - 10A10 A05 D imensions in inches and (millimeters) 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 Sector 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com