12F

12F/12FR 12AMP SILICON POWER DIODE DO-4 FEATURES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS 12F/FR NAINA 12F/ 12FR 4 19 11.5 M6 x 1.0 A 12A 1.2V 250 A 60 A 250A 2Sec C A FR 11A/F IF (A) Maximum Average Forward Current Te=1500C V FM Maximum peak forward voltage drop @ Rated IF(AV) IFSMMaximum peak one cycle (non-rep) surge current 10msec IFRMMaximum peak one cycle (non -rep) surge current 10msec I2t Maximum I2t rating (non-rep.) for 5 to 10 m sec. F C 10 THERMAL MECHANICAL SPECIFICATIONS θJC TJ Tstg W Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (non-lubricated threads) Approx, weight 2oC/W -65oC to 150oC -65 oC to 150oC 0.14 M-Kg min, 0.17 M-kg max 7 gms. ELECTRICAL RATINGS TYPE VRRM 12F/12FR Max. repetitive peak voltage (v) 10 100 70 100 40 100 20 200 140 200 80 100 40 400 280 400 160 100 60 600 420 60 240 100 80 800 560 800 320 100 100 1000 700 1000 400 100 120 1200 840 1200 480 100 140 160 1400 1600 980 1120 VR(RMS) VR Max. R.M.S. reverse voltage (V) Max. D.C. Blocking Voltage (V) Recommended R.M.S. working Voltage(v) Max. Average reverse leakage current @ VRMM Tc 250C uA 1400 1600 560 100 640 100 IR(AV) NAINA SEMICONDUCTOR LTD. D95,SECTOR 63 NOIDA(INDIA) e-mail : sales@nainasemi.com, web site : www.nainasemi.com