160MDS

Naina Semiconductor Ltd. Three – Phase Bridge Rectifier Features Easy connections Excellent power volume ratio Insulated type 160 MDS Voltage Ratings (TJ = 250C unless otherwise noted) VRRM, Max. repetitive peak reverse voltage (V) 800 1000 1200 1400 1600 Type number Voltage code VRSM, Max. nonrepetitive peak reverse voltage (V) 900 1100 1300 1500 1700 IRRM max @ TJ max (mA) 80 160 MDS 100 120 140 160 M DS - 1 60 10 Thermal and Mechanical Specifications (TA = 250C unless otherwise noted) Parameters Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Mounting torque ±10% Approximate weight DC operation per module DC operation per junction 120 Rect conduction angle per module 120 Rect conduction angle per junction Per module, Mounting surface smooth, flat and greased to heatsink to terminal Rth(CS) T Symbol TJ TStg Values - 40 to + 150 - 40 to + 150 0.12 0.73 0.15 0.88 0.03 4 to 6 3 to 4 176 Units 0 0 C C Rth(JC) 0 C/W 0 C/W Nm g 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com Naina Semiconductor Ltd. Electrical Specifications (TJ = 250C unless otherwise noted) Parameters Maximum DC output current Maximum peak one-cycle forward, non-repetitive surge current 160 MDS Conditions 120 Rect conduction angle, TC = 85 C t = 10ms t = 8.3ms t = 8.3ms t = 10ms T = 8.3ms T = 10ms T = 8.3ms T = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied 0 0 Symbol I0 Values 160 1430 1500 1200 1260 10200 9300 7200 6600 102000 0.81 Units A IFSM TJ = TJ max. It 2 A Maximum I t for fusing 2 As 2 Maximum J √t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop 2 T = 0.1 to 10ms, no voltage reapplied [ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max [ I > π > IF(AV) ], @ TJ max J √t VF(TO)1 VF(TO)2 2 A √s V 2 1.04 V [ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max [ I > π * IF(AV) ], @ TJ max Ipk = 100A, tP = 400 µs single junction f = 50Hz, t = 1ms, all terminals shorted r1 r2 VFM VISO 3.52 mΩ 3.13 mΩ 1.49 V RMS isolation voltage 4000 V Diode Configuration 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com Naina Semiconductor Ltd. 160 MDS A LL DIMENSIONS IN MM 3 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com