Naina Semiconductor Ltd. emiconductor
Thyristor – Diode Module
Features
• • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
160NTD
Maximum Ratings (TA = 250C unless otherwise noted) unless
Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms
2
Symbol IF(AV) IF(RMS) IFSM It
2
Values 160 350 5100 120
Units A A A kA s M 3 PACKAGE
2
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 to +125 65 0.16
O
Units
O
C
C/W
Electrical Characteristics (TA = 250C unless otherwise noted) unless
Parameter
Maximum average on-state current Maximum repetitive peak reverse voltage range Forward voltage drop Gate current required to trigger Gate voltage required to trigger Holding current range Maximum latching current Critical rate of rise of off-state voltage RMS isolated voltage
Symbol
IT(max) VRRM VFM IGT VGT IH IL dv/dt VISO
Values
160 200 to 1600 1.5 150 2.5 200 500 1000 3500
Units
A V V mA V mA mA V/µs V
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 Sector 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com
Naina Semiconductor Ltd. emiconductor
160NTD
A LL DIMENSIONS IN MM
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 Sector 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com
很抱歉,暂时无法提供与“160NTD”相匹配的价格&库存,您可以联系我们找货
免费人工找货