160NTT

Naina Semiconductor Ltd. emiconductor Thyristor – Thyristor Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 160NTT Maximum Ratings (TA = 250C unless otherwise noted) unless Parameter Maximum average forward current @ TJ 0 = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) F(AV) IF(RMS) F(RMS) IFSM It 2 Values 160 350 5100 120 Units A A A kA s M 3 PACKAGE 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 to +125 65 0.16 O Units O C C/W Electrical Characteristics (TA = 250C unless otherwise noted) unless Parameter Maximum average on-state current Maximum repetitive peak reverse voltage range Forward voltage drop Gate current required to trigger Gate voltage required to trigger Holding current range Maximum latching current Critical rate of rise of off-state voltage RMS isolated voltage Symbol IT(max) VRRM VFM IGT VGT IH IL dv/dt VISO Values 160 200 to 1600 1.5 150 2.5 200 500 1000 3500 Units A V V mA V mA mA V/µs V 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 Sector 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com Naina Semiconductor Ltd. emiconductor 160NTT A LL DIMENSIONS IN MM Diode Configuration 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 Sector 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com