IN 5831
SCHOTTKY RECTIFIER
NAINA
25 AMPERE
40 VOLTS
Switch mode Power Rectifier.
employing the Schottky Barrier principle in a large area metal-to-silicon power diode.State-of-the-art geometry features epitaxial construction with oside passivation and metal overlap contact. ideally suited for use as rectifiers in lowvoltage, high-frequency inverters, free whelling diodes, and polarity protection diodes. • Extremely Low VF • Low Power Loss/High • Low Stored Charge, Majority Efficiency Carrier Conduction • High Surge Capacity Mechnical Characteristics : • Case Welded steel, hermetically seated • Finish : All External Surtaces Corrosion Resistant and Terminal Lead is Readily Solderable Solder Heat : The excellent heat transfer property of the heavy duty copper anode terminal which transmits heat away from the die requires that caution be used when attaching wires.
•
Stud Torque: 15 Ib-in max
NA MAXIMUM RATINGS
Ratings Peak Repetitive Reverse Voltage Working Peak Reverse Voltage PC Blooking Voltage Nonrepetitive Peak Reverse Voltage Average Rectified Forward Current VR(equiv) ≤0.2 VR(dc).. TC=850C Ambient Temperature Rated VR(dc). PF(AV)= 0, RθJA=3.50C/W Nonrepetitive Peak Surge Current (surge applied at rated load conditions, halfwave, single phase, 60 Hz) Operating and Storage Junction Temperature Range (Reverse voltage applied) Peak Operating Junction Temperature (Forward Current Applied) Symbol VRRM VRWM VR VRSM IO TA IFSM 1N5831 40 UNIT Volts
48 25 90 800 for one cycle -65 TO +125 150
Volts Amps C Amps
0
TJ, Tstg TJ(pk)
0
C C
0
THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction to case RθJC ELECTRICAL CHARACTERISTICS (TC =250Cunless otherwise noted) Maximum Instantaneous Forward Voltage(1) (IF=10 Amps) VF ( IF=25 Amps)) (IF=78.5 Amps) Maximum Instantaneous Reverse Current @ Rated dc Voltage(1) (1) (TC=1000C
Max 1.75 0.38 0.48 0.82 20 150
0
Unit C/W
Volts
ma
NAINA SEMICONDUCTOR LTD., D95,SECTOR 63,NOIDA-201301(INDIA)
TEL:91-11-4205450,4273654,e-mail: kmm@nainasemi.com web:www.nainasemi.com
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