1N5832_1

Naina Semiconductor Ltd. emiconductor Schottky Barrier Rectifier Diode Schottky Features • Fast Switching • Low forward voltage drop, VF • Guard ring protection • High surge capacity • High efficiency, low power loss 1N5832 Electrical Ratings (TC = 250C, unless otherwise noted) C, Parameter Repetitive peak reverse voltage DC blocking voltage Non-repetitive peak reverse voltage Average rectified forward current O (TC = 85 C) Non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 Hz Symbol VRRM 20 VDC VRSM IF(AV) 24 40 V A D O- 2 03AB (DO -5) 203AB Values Units V IFSM 800 A Maximum Ratings (TC = 250C, unless otherwise noted) C, Parameter Maximum instantaneous forward voltage Test Conditions IF = 1 0 A IF = 4 0 A IF = 125 A TC = 25OC O TC = 100 C VF Symbol Values 0.36 0.52 0.98 20 150 Units V V V mA mA Maximum instantaneous reverse current at rated DC voltage IR Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted) Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Symbol Rth(JC) TJ Tstg W Values 1.0 -65 to +125 65 -65 to +125 65 15 45.6 Units 0 C/W 0 C 0 C in-lb g Naina Semiconductor Ltd. emiconductor 1N5832 A LL DIMENSIONS IN MM