200NS

Naina Semiconductor Ltd. emiconductor Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 200NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Electrical Specifications (TE = 250C, unless otherwise noted) C, Symbol IF(AV) VFM IFSM IFRM It 2 Parameters Maximum avg. forward current @ TE = O 150 C Maximum peak forward voltage drop @ rated IF(AV) Maximum peak one cycle (non-rep) surge current @ 10 msec Maximum peak repetitive surge current 2 rep) Maximum I t rating (non-rep) for 5 to 10 msec Values 200 1.4 4000 11000 92500 Units A V A A A sec 2 D O- 2 05AA (DO -8) 205AA Electrical Ratings (TE = 250C, unless otherwise noted) C, Type number Voltage Code 10 20 40 60 200NS(R) 80 100 120 140 160 VRRM, Maximum repetitive peak reverse voltage (V) 100 200 400 600 800 1000 1200 1400 1600 VR(RMS), Maximum RMS reverse voltage (V) 70 140 280 420 560 700 840 980 1120 VR, Maximum DC blocking voltage (V) 100 200 400 600 800 1000 1200 1400 1600 Recommended RMS working voltage (V) 40 80 160 240 320 400 480 560 640 200 IR(AV), Maximum avg. reverse leakage current (µA) Naina Semiconductor Ltd. emiconductor Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted) Symbol Rth(JC) TJ Tstg W Parameters Maximum thermal resistance, junction to case Maximum Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight 200NS(R) Values 0.23 -65 to 150 65 -65 to 200 2.0 (min) – 3.0 (max) 150 Units 0 C/W 0 0 C C G A LL DIMENSIONS IN MM