25NDD

Naina Semiconductor Ltd. emiconductor Diode – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 25NDD Maximum Ratings (TA = 250C unless otherwise noted) unless Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It 2 Values 25 39 600 1.4 Units A A A 1 M 1 PACKAGE kA s 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 to +125 1.0 0 Units 0 C C/W Electrical Characteristics (TA = 25OC unless otherwise noted) unless Parameter Maximum average on-state current, 180 C sinusoidal sinusoidal Maximum repetitive peak reverse voltage range Maximum Forward voltage drop RMS isolation voltage 0 Symbol IT(max) VRRM VFM VISO Values 25 200 to 1600 1.15 2500 Units A V V V 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com Naina Semiconductor Ltd. emiconductor 25NDD A LL DIMENSIONS ARE IN MM Diode Configuration 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com