35MB

Naina Semiconductor Ltd. emiconductor Single Phase Bridge Rectifier Features • Glass passivated chip junction • Surge capability of 400 A • High efficiency • Electrically isolated metal case for maximum heat dissipation • Mounting: thru hole for # 8 screw 35MB Thermal and Mechanical Specifications (TA = 250C unless otherwise noted) Parameters Maximum operating junction temperature range Maximum storage temperature range Approximate weight Symbol TJ TStg WT Values - 55 to + 125 - 55 to + 150 30 Units 0 C C G BPC 0 g Voltage Ratings (TA = 250C unless otherwise noted) unless Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output current Peak forward surge current (10ms) single half sine-wave superimposed on rated load Maximum DC forward voltage drop per element @ 7.5 A TA = Maximum DC reverse 250C current at rated DC blocking voltage per TA = element 1250C Symbol VRRM VRMS VDC IF(AV) IFSM FSM VF 50 35 50 100 70 100 200 140 200 35MB 400 280 400 35.0 400 1.2 5.0 IR 500 µA 600 420 600 800 560 800 1000 700 1000 Units V V V A A V 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com Naina Semiconductor Ltd. emiconductor 35MB A LL DIMENSIONS ARE IN MM 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com