40NTD

Naina Semiconductor Ltd. emiconductor Thyristor – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 40NTD Maximum Ratings (TA = 250C unless otherwise noted) unless Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It 2 Values 40 100 1000 5000 Units A A A As 2 M 1 P ACKAGE Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 to +125 65 0.7 0 Units 0 C C/W Electrical Characteristics (TA = 250C unless otherwise noted) unless Parameter Maximum average on-state current Maximum repetitive peak reverse voltage range Forward voltage drop Gate current required to trigger Gate voltage required to trigger Holding current range Maximum latching current Critical rate of rise of off-state voltage RMS isolated voltage Symbol IT(max) VRRM VFM IGT VGT IH IL dv/dt VISO Values 40 200 to 1600 1.25 100 2 5 to 100 300 300 2500 Units A V V A V mA mA V/µs V 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com Naina Semiconductor Ltd. emiconductor 40NTD A LL DIMENSIONS ARE IN MM Diode Configuration 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com