6A10

Naina Semiconductor Ltd. emiconductor Silicon Rectifier, 6.0A Features • Diffused junction • Low cost • Low reverse leakage current • High current capability & low forward voltage drop • Plastic material carrying UL recognition 94V-0 • Polarity: Color Band denotes Cathode • Lead free finish 6A05 - 6A10 A05 Thermal and Mechanical Specifications (TA = 250C unless otherwise specified) Parameters Maximum operating junction temperature range Maximum storage temperature range Typical thermal resistance junction to ambient Approximate weight Symbol TJ TStg RθJA W Values -55 to +150 -55 to +150 10 0 Units 0 C C J EDEC R -6 0 C/W g 2.1 Electrical Characteristics (TA = 250C unless otherwise specified) unless Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output current @ TA = 500C Peak forward surge current (8.3ms) single half sine-wave superimposed on rated load Maximum DC forward voltage drop per element @ 10 A Typical junction capacitance Maximum DC reverse TA = 250C current at rated DC TA = 1000C blocking voltage Symbol VRRM VRMS VDC IF(AV) IFSM VF CJ IR 100 6A05 50 35 50 6A1 100 70 100 6A2 200 140 200 6A4 400 280 400 6.0 400 0.9 150 10 6A6 600 420 600 6A8 800 560 800 6A10 1000 700 1000 Units V V V A A V pF µA 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com Naina Semiconductor Ltd. emiconductor 6A05 - 6A10 A05 D imensions in inches and (millimeters) 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com