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804DCR

804DCR

  • 厂商:

    NAINA

  • 封装:

  • 描述:

    804DCR - Phase Control Thyristors (Capsule Type) - Naina Semiconductor ltd.

  • 数据手册
  • 价格&库存
804DCR 数据手册
Naina Semiconductor Ltd. emiconductor Phase Control Thyristors (Capsule Type) Features • • • • Metal case with ceramic insulator High current rating Bifacial cooled Center gate trigger 804DCR Applications • • • DC motor controls AC controllers DC power supplies T O- 200A C (B-PUK) 2 00A Voltage Ratings Type number Voltage Code 40 60 804DCR 80 100 120 140 160 VDRM/VRRM, Maximum Repetitive peak Maximum & off-state voltage state V 400 600 800 1000 1200 1400 1600 VRSM, Maximum nonrepetitive peak voltage V 500 700 900 1100 1300 1500 1700 50 IDRM/IRRM, Maximum at TJ = TJ maximum mA Electrical Ratings (TJ = 250C, unless otherwise specified) Parameters Maximum on-state average current 180 sinusoidal conduction @ TC = 55 C sinusoidal Maximum RMS on-state current Maximum peak, one cycle non-repetitive surge current repetitive Maximum I t for fusing @ t = 10ms Maximum repetitive peak on and off-state voltage range state Maximum peak on-state voltage (TJ = 125 C, Ipeak = 1100A) Maximum holding current @ TJ = 25 C 0 Maximum latching current @TJ = 25 C Threshold voltage Slope resistance 0 0 2 O 0 Symbol IT(AV) IT(RMS) ITSM It VRRM, VDRM DRM VTM IH IL VT0 rT 2 Values 800 1256 12000 218 200 to 1600 1.7 300 800 0.99 0.75 Units A A A As V V mA mA V mΩ 2 Switching Ratings (TJ = 250C,, unless otherwise specified) C Parameters Rate of rise of turn-on current @ TJ = TJ max, anode voltage ≤ 80% VDRM max, Typical turn-on time Typical turn-off time Symbol di/dt td tq Values 200 12 200 Units A/µs µs 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 Sector 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com Naina Semiconductor Ltd. emiconductor Blocking Parameters (TJ = 250C,, unless otherwise specified) C Parameters Critical rate of rise of off-state voltage @ TJ = TJ max, linear to 80% rated VDRM Maxmimum peak reverse & off-state leakage current @ TJ = TJ max, rated VDRM/VRRM applied Symbol dV/dt IRRM, IDRM 804DCR Values 500 50 Units V/µs mA Triggering Parameters (TJ = 250C,, unless otherwise specified) C Parameters DC gate current to trigger DC gate voltage to trigger Symbol IGT VGT Values 2 00 3.0 Units mA V Thermal and Mechanical Specifications (TJ = 250C, unless otherwise specified) Thermal Parameters Maximum operating junction temperature range Maximum Maximum storage temperature range Maximum thermal resistance, junction to case Mounting torque Approximate weight Symbol TJ TStg Rth(JC) F WT Values - 40 to +125 - 40 to +125 0.045 12 .. 14 260 0 Units 0 C 0 C C/W kN g A LL DIMENSIONS IN MM 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 Sector 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com
804DCR 价格&库存

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