BA159

Naina Semiconductor Ltd. emiconductor Fast Recovery Diode, 1.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability BA159 Mechanical Characteristics • Case: Molded Plastic • • • • Cathode indicated by Polarity band Mounting position: Any Terminals: Finish Tin plated, Solderable per Solderable MIL-STD-202, Method 208 Weight: 0.33 grams (approx.) DO-41 Maximum Ratings (TA = 250C unless otherwise specified) unless Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output current @ TA = 500C Peak forward surge current (8.3ms) single half sine-wave ms) superimposed on rated load Symbol VRRM VRMS VDC IF(AV) IFSM BA159 1000 700 1000 1.0 30 Units V V V A A Electrical Characteristics (TA = 250C unless otherwise specified) Parameters Maximum DC forward voltage drop @ 1.0A DC Maximum DC reverse current @ rated DC blocking Maximum voltage Maximum reverse recovery time TA = 250C TA = 1000C Symbol VF IR tRR BA159 1.2 5.0 50 500 Units V µA ns Thermal and Mechanical Specifications (TA = 250C unless otherwise specified) Parameters Typical thermal resistance, junction to ambient Operating and Storage temperature range Symbol RθJA TJ , TStg Values 65 - 65 to + 150 Units 0 C/W 0 C 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com Naina Semiconductor Ltd. emiconductor BA159 D imensions in inches and (millimeters) 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com