Naina Semiconductor Ltd. emiconductor
Schottky Barrier Rectifier Diode
Features • Fast Switching • Low forward voltage drop, VF • Guard ring protection • High surge capacity • High efficiency, low power loss
SD41
Electrical Ratings (TC = 250C, unless otherwise noted) C,
Parameter Repetitive peak reverse voltage DC blocking voltage Non-repetitive peak reverse voltage Average rectified forward current 0 (TC = 85 C) Non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 Hz Symbol VRRM 45 VDC VRSM IF(AV) 54 30 V A
D O- 203AA (DO -4) 2 03AA
Values
Units V
IFSM
600
A
Maximum Ratings (TC = 250C, unless otherwise noted) C,
Parameter Test Conditions IF = 3 0 A Maximum instantaneous forward voltage IF = 6 0 A IF = 60 A @ 150 C TC = 25 C Maximum instantaneous reverse current at rated DC voltage TC = 125 C
0 0 0
Symbol
Values 0.58
Units V V V mA mA
VF
0.75 0.70 50
IR 125
Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted)
Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Symbol Rth(JC) TJ Tstg W Values 2.0 -65 to +150 65 -65 to +150 65 15 45.6 Units 0 C/W 0 C C in-lb g
0
Naina Semiconductor Ltd. emiconductor
SD41
A LL DIMENSIONS IN MM
很抱歉,暂时无法提供与“SD41”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 5+0.05793
- 20+0.05281
- 100+0.0477
- 500+0.04259
- 1000+0.04021
- 2000+0.0385
- 国内价格
- 5+0.13113
- 20+0.11907
- 100+0.107
- 500+0.09493
- 1000+0.0893
- 2000+0.08528
- 国内价格
- 10+0.29564
- 50+0.27279
- 200+0.25375
- 600+0.23471
- 1500+0.21948
- 3000+0.20996
- 国内价格
- 10+0.1027
- 100+0.0962
- 500+0.0897
- 2000+0.0832
- 5000+0.07865
- 10000+0.0767
- 国内价格
- 10+0.12656
- 100+0.11865
- 500+0.11074
- 2000+0.10283
- 5000+0.09729
- 10000+0.09492