SD41_1

Naina Semiconductor Ltd. emiconductor Schottky Barrier Rectifier Diode Features • Fast Switching • Low forward voltage drop, VF • Guard ring protection • High surge capacity • High efficiency, low power loss SD41 Electrical Ratings (TC = 250C, unless otherwise noted) C, Parameter Repetitive peak reverse voltage DC blocking voltage Non-repetitive peak reverse voltage Average rectified forward current 0 (TC = 85 C) Non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 Hz Symbol VRRM 45 VDC VRSM IF(AV) 54 30 V A D O- 203AA (DO -4) 2 03AA Values Units V IFSM 600 A Maximum Ratings (TC = 250C, unless otherwise noted) C, Parameter Test Conditions IF = 3 0 A Maximum instantaneous forward voltage IF = 6 0 A IF = 60 A @ 150 C TC = 25 C Maximum instantaneous reverse current at rated DC voltage TC = 125 C 0 0 0 Symbol Values 0.58 Units V V V mA mA VF 0.75 0.70 50 IR 125 Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted) Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Symbol Rth(JC) TJ Tstg W Values 2.0 -65 to +150 65 -65 to +150 65 15 45.6 Units 0 C/W 0 C C in-lb g 0 Naina Semiconductor Ltd. emiconductor SD41 A LL DIMENSIONS IN MM