SD51_1

Naina Semiconductor Ltd. emiconductor Schottky Barrier Rectifier Diode Features • Fast Switching • Low forward voltage drop, VF • Guard ring protection • High surge capacity • High efficiency, low power loss SD51 Electrical Ratings (TC = 250C, unless otherwise noted) C, Parameter Repetitive peak reverse voltage DC blocking voltage Non-repetitive peak reverse voltage Average rectified forward current (TC = 850C) Non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 Hz Symbol VRRM 45 VDC VRSM IF(AV) 54 60 V A D O- 2 03AB (DO -5) 203AB Values Units V IFSM 600 A Maximum Ratings (TC = 250C, unless otherwise noted) C, Parameter Test Conditions IF = 3 0 A Maximum instantaneous forward voltage IF = 6 0 A IF = 120 A TC = 250C Maximum instantaneous reverse current at rated DC voltage TC = 125 C 0 Symbol Values 0.58 Units V V V mA mA VF 0.66 0.86 50 IR 125 Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted) Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Symbol Rth(JC) TJ Tstg W Values 1.0 -65 to +150 65 -65 to +150 65 15 45.6 Units 0 C/W 0 0 C C in-lb g Naina Semiconductor Ltd. emiconductor SD51 A LL DIMENSIONS IN MM