This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1674
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SC4391
Unit: mm
6.9±0.1
4.0
2.5±0.1
(0.8)
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• High collector-emitter voltage (Base open) VCEO
• Allowing supply with the radial taping
(0.5)
(1.0)
(0.2)
4.5±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
0.7
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−80
V
Collector-emitter voltage (Base open)
VCEO
−80
V
Emitter-base voltage (Collector open)
VEBO
−5
V
Collector current
IC
−1
A
Peak collector current
ICP
−1.5
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.45+0.10
–0.05
2.5±0.5
1
14.5±0.5
d
p
lan inc
ea
se
ed lud
p
lan m m es
ht visi
tp t f
ed ain ain foll
:// ol d d te te ow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
n. ab typ ty
du
pa ou e pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
(1.0)
0.65 max.
1.05±0.05
0.45+0.10
–0.05
2.5±0.5
2
3
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
cm2
Note) *: Printed circuit board: Copper foil area of 1
or more, and the
board thickness of 1.7 mm for the collector portion
Parameter
Symbol
Collector-base voltage (Emitter open)
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
Conditions
Min
Typ
Max
Unit
IC = −10 µA, IE = 0
−80
V
VCEO
IC = −1 mA, IB = 0
−80
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−5
Collector-base cutoff current (Emitter open)
ICBO
VCB = −40 V, IE = 0
Di
sc
on
tin
VCBO
Collector-emitter voltage (Base open)
V
− 0.1
µA
340
VCE = −2 V, IC = −100 mA
120
hFE2 *1
VCE = −2 V, IC = −500 mA
60
Collector-emitter saturation voltage *1
VCE(sat)
IC = −500 mA, IB = −50 mA
− 0.2
− 0.3
V
Base-emitter saturation voltage *1
VBE(sat)
IC = −500 mA, IB = −50 mA
− 0.85
−1.20
V
e/
hFE1 *2
M
ain
te
na
nc
Forward current transfer ratio
fT
Cob
VCB = −10 V, IE = 50 mA, f = 200 MHz
120
VCB = −10 V, IE = 0, f = 1 MHz
15
MHz
30
pF
Pl
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
120 to 240
170 to 340
Publication date: March 2003
SJC00025BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1674
Collector power dissipation PC (W)
IC VCE
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness
Ta = 25°C
−1.0
IB = −8 mA
−7 mA
−6 mA
Collector current IC (A)
1.0
VCE(sat) IC
−1.2
− 0.8
−5 mA
−4 mA
−10
IC / IB = 10
−1
Ta = 75°C
25°C
M
Di ain
sc te
on na
tin nc
ue e/
d
0.8
Collector-emitter saturation voltage VCE(sat) (V)
PC Ta
1.2
− 0.6
0.4
0.2
−2 mA
− 0.2
−1 mA
40
80
120
160
Forward current transfer ratio hFE
25°C
75°C
− 0.1
− 0.01
− 0.01
− 0.1
−6
−8
−1
300
Ta = 75°C
200
25°C
–25°C
100
ue
− 0.1
−1
Collector current IC (A)
tin
on
Di
sc
nc
e/
IE = 0
f = 1 MHz
Ta = 25°C
te
na
40
M
ain
30
Pl
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
50
20
10
0
−1
−10
−100
Collector-base voltage VCB (V)
2
− 0.001
− 0.01
SJC00025BED
−10
− 0.1
−1
−10
Collector current IC (A)
fT I E
200
VCE = −2 V
400
0
− 0.01
−10
Collector current IC (A)
60
−10
hFE IC
−10
−1
−4
500
IC / IB = 10
Ta = −25°C
−2
0
Collector-emitter voltage VCE (V)
VBE(sat) IC
−100
−25°C
− 0.01
0
0
Ambient temperature Ta (°C)
Base-emitter saturation voltage VBE(sat) (V)
− 0.4
− 0.1
Transition frequency fT (MHz)
0
−3 mA
d
p
lan inc
ea
se
ed lud
p
lan m m es
ht visi
tp t f
ed ain ain foll
:// ol d d te te ow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
n. ab typ ty
du
pa ou e pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
0.6
VCB = −10 V
Ta = 25°C
160
120
80
40
0
1
10
Emitter current IE (mA)
100
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
pla d in
ea
ne clu
se
pla m d de
v
ht isi
ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
n. ab typ ty
du
pa ou e pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
M
Di ain
sc te
on na
tin nc
ue e/
d
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
M
ain
te
na
nc
e
/D
isc
on
tin
ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
