This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SA2067
Silicon PNP epitaxial planar type
Unit: mm
10.0±0.2
C 1.0
18.0±0.5
Solder Dip
1.48±0.2
2.25±0.2
0.65±0.1
0.65±0.1
0.35±0.1
1.05±0.1
0.55±0.1
0.55±0.1
■ Absolute Maximum Ratings TC = 25°C
2.5±0.2
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−60
V
Collector-emitter voltage (Base open)
VCEO
−60
V
Emitter-base voltage (Collector open)
VEBO
−6
V
Collector current
IC
−3
A
Peak collector current
ICP
−6
A
Collector power dissipation
PC
15
W
Ta = 25°C
1.2±0.1
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• High speed switching (tstg: storage time/tf: fall time is short)
• Low collector-emitter saturation voltage VCE(sat)
• Superior forward current transfer ratio hFE linearity
• Allowing automatic insertion eith radial taping
2.5±0.1
13.0±0.2
■ Features
5.0±0.1
90˚
1.0±0.2
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4.2±0.2
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
2.5±0.2
1 2 3
1 : Base
2 : Collector
3 : Emitter
MT-4-A1 Package
Internal Connection
C
B
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
E
ue
■ Electrical Characteristics TC = 25°C ± 3°C
Symbol
tin
Parameter
Conditions
Min
Typ
Max
IC = −10 mA, IB = 0
Collector-base cutoff current (Emitter open)
ICBO
VCB = −60 V, IE = 0
−100
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = −60 V, IB = 0
−100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
Forward current transfer ratio
hFE1 *
VCE = −4 V, IC = −1 A
120
hFE2
VCE = −4 V, IC = −3 A
40
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VCEO
Collector-emitter saturation voltage
VCE(sat)
−60
Unit
Collector-emitter voltage (Base open)
IC = −3 A, IB = − 375 mA
V
−1
mA
320
− 0.8
V
fT
VCE = −10 V, IC = − 0.1 A, f = 10 MHz
Turn-on time
ton
IC = −1 A, Resistance loaded
Storage time
tstg
IB1 = − 0.1 A, IB2 = 0.1 A
0.7
µs
VCC = 50 V
0.15
µs
Pl
Transition frequency
Fall time
tf
90
MHz
0.3
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
120 to 250
160 to 320
Publication date: January 2003
SJD00286BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2067
IC VBE
VCE(sat) IC
−7
VCE = −4 V
−5
−4
−1
Ta = 25°C
VCE = −4 V
1 000
M
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Collector current IC (A)
−6
hFE IC
10 000
IC / IB = 8
DC current gain hFE
Collector to emitter saturation voltage VCE(sat) (V)
−10
−3
−2
− 0.01
− 0.5
0
−1.0
−1.5
− 0.001
− 0.01
−2.0
Base to emitter voltage VBE (V)
t = 1 ms
t = 10 ms
IC
t=1s
−1
− 0.1
− 0.01
−1
−10
−100
− 0.1
−1
−1 000
Pl
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Collector to emitter voltage VCE (V)
ue
Collector current IC (A)
Non repetitive pulse
TC = 25°C
−10 I
CP
10
Collector current IC (A)
Safe operation area
−100
2
100
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−1
0
− 0.1
SJD00286BED
−10
1
− 0.01
− 0.1
−1
Collector current IC (A)
−10
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
pla d in
ea
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tp t f
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
M
ain
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
