This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB0621
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to SD0592
Package
M
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Features
Code
TO-92B-B1
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–30
V
Collector-emitter voltage (Base open)
VCEO
–25
V
Emitter-base voltage (Collector open)
VEBO
–5
V
–1
A
–1.5
A
750
mW
150
°C
–55 to +150
°C
Collector current
IC
Peak collector current
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
Electrical Characteristics Ta = 25°C±3°C
Parameter
Pin Name
1. Emitter
2. Collector
3. Base
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Low collector-emitter saturation voltage VCE(sat)
High transition frequency fT
Symbol
Conditions
Min
Typ
Max
Unit
VCBO
IC = –10 mA, IE = 0
–30
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–25
V
VEBO
IE = –10 mA, IC = 0
–5
V
ICBO
VCB = –20 V, IE = 0
hFE1 *
VCE = –10 V, IC = –500 mA
85
hFE2
VCE = –5 V, IC = –1 A
50
on
tin
Emitter-base voltage (Collector open)
ue
Collector-base voltage (Emitter open)
nc
e
Forward current transfer ratio
/D
isc
Collector-base cutoff current (Emitter open)
te
na
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
340
mA
VCE(sat)
IC = –500 mA, IB = –50 mA
– 0.2
– 0.4
V
VBE(sat)
IC = –500 mA, IB = –50 mA
– 0.85
–1.2
V
fT
M
ain
Transition frequency
– 0.1
200
VCB = –10 V, IE = 0, f = 1 MHz
20
MHz
30
pF
Pl
Cob
VCB = –10 V, IE = 50 mA, f = 200 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Publication date : October 2008
SJC00044DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0621
PC Ta
IC VCE
−1.50
Ta = 25°C
−1.25
− 0.75
0.4
−4 mA
−3 mA
− 0.50
VCE = −10 V
Ta = 25°C
Collector current IC (A)
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−1.00
0.6
−1.0
IB = −10 mA
Collector current IC (A)
0.8
IC IB
−1.2
− 0.8
− 0.6
− 0.4
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Collector power dissipation PC (W)
1.0
0.2
− 0.25
80
120
160
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
−10
−1
Ta = 75°C
25°C
−25°C
− 0.01
− 0.01
− 0.1
−2
−4
−6
−8
0
−10
0
−2
−4
−1
−100
−10
25°C
75°C
VCE = −10 V
Ta = 75°C
25°C
−25°C
100
− 0.01
− 0.01
− 0.1
−1
0
− 0.01
−10
− 0.1
−1
−10
Collector current IC (A)
Collector current IC (A)
/D
isc
nc
e
te
na
120
M
ain
80
40
0
1
10
Emitter current IE (mA)
2
IE = 0
f = 1 MHz
Ta = 25°C
40
100
VCER RBE
−120
IC = −10 mA
Ta = 25°C
−100
−80
30
−60
20
−40
Pl
Transition frequency fT (MHz)
160
Cob VCB
50
CER
fT IE
200 V = −10 V
CB
Ta = 25°C
Collector output capacitance
(Common base, input open circuited) Cob (pF)
on
tin
ue
Collector current IC (A)
−12
400
200
− 0.1
−10
−10
300
Ta = −25°C
−1
−8
hFE IC
500
IC / IB = 10
−6
Base current IB (mA)
VBE(sat) IC
IC / IB = 10
− 0.1
0
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
−100
0
− 0.2
FE
40
−1 mA
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Collector-emitter voltage V
dhu
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y
(V)
Forward
current
transfer
ratio
b
. p o pe p
(Resistor between B and E)
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0
Base-emitter saturation voltage VBE(sat) (V)
0
−2 mA
10
−20
0
−1
−10
−100
Collector-base voltage VCB (V)
SJC00044DED
0
0.1
1
10
100
Base-emitter resistance RBE (kΩ)
10
Collector current IC (A)
102
40
80
120
160
Ambient temperature Ta (°C)
− 0.001
− 0.1
Collector-emitter voltage VCE (V)
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104
M
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ICEO (Ta)
ICEO (Ta = 25°C)
M
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0621
ICEO Ta
VCE = −10 V
−10
安全動作領域
Single pulse
Ta = 25°C
−1
ICP
IC
t = 10 ms
− 0.1
t=1s
− 0.01
−1
SJC00044DED
−10
−100
3
+0.15
4
ue
0.45 −0.1
on
tin
/D
isc
nc
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±0.5
±0.2
0.7 ±0.1
2.5 −0.2
+0.6
1
±0.2
±0.2
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0621
TO-92-B1
Unit: mm
5.0 ±0.2
2
4.0 ±0.2
0.45 −0.1
+0.15
2.5 −0.2
+0.6
3
SJC00044DED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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