This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0601A (2SD601A)
Unit: mm
M
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0.40+0.10
–0.05
0.16+0.10
–0.06
0.4±0.2
1.50+0.25
–0.05
5˚
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• High forward current transfer ratio hFE
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
2.8+0.2
–0.3
3
■ Features
(0.95) (0.95)
1.9±0.1
(0.65)
2
1
2.90+0.20
–0.05
■ Absolute Maximum Ratings Ta = 25°C
Unit
Collector-base voltage (Emitter open)
VCBO
−45
V
Collector-emitter voltage (Base open)
VCEO
−45
V
Emitter-base voltage (Collector open)
VEBO
−7
V
Collector current
IC
−100
mA
Peak collector current
ICP
−200
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1.1+0.2
–0.1
Rating
0 to 0.1
Symbol
1.1+0.3
–0.1
10˚
Parameter
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: B
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−45
V
VCEO
IC = −2 mA, IB = 0
−45
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−7
Collector-base cutoff current (Emitter open)
ICBO
VCB = −20 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −10 V, IB = 0
Forward current transfer ratio *
hFE
VCE = −10 V, IC = −2 mA
te
na
nc
e/
on
tin
Collector-emitter voltage (Base open)
ue
Parameter
Di
sc
■ Electrical Characteristics Ta = 25°C ± 3°C
Collector-emitter saturation voltage
VCE(sat)
fT
M
ain
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Cob
Conditions
Min
Typ
160
IC = −100 mA, IB = −10 mA
− 0.3
Max
Unit
V
− 0.1
µA
−100
µA
460
− 0.5
V
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
VCB = −10 V, IE = 0, f = 1 MHz
2.7
pF
Pl
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
Marking symbol
BQ
BR
BS
B
Product of no-rank is not classified and have no marking symbol for rank.
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJD00047BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0709A
IC VCE
−100
160
IC I B
−60
Ta = 25°C
VCE = −5 V
Ta = 25°C
−50
−80
IB = −300 µA
Collector current IC (mA)
200
Collector current IC (mA)
−120
−40
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector power dissipation PC (mW)
PC Ta
240
120
80
−200 µA
−40
−150 µA
−100 µA
80
120
160
−2
0
−4
−6
−8
−10
Collector current IC (mA)
Base current IB (µA)
−300
25°C
Ta = 75°C
−25°C
−160
−250
−150
−100
−80
− 0.8
−1.2
0
−1.6
0
−300
−10
−400
IC / IB = 10
−1
Ta = 75°C
25°C
− 0.4
− 0.8
−1.2
−1.6
−2.0
− 0.001
−1
−25°C
−10
−100
−1 000
Collector current IC (mA)
Base-emitter voltage VBE (V)
Di
sc
hFE IC
600
300
Ta = 75°C
25°C
Cob VCB
VCB = −10 V
Ta = 25°C
120
100
80
60
Pl
−25°C
200
100
0
−1
40
20
−10
−100
Collector current IC (mA)
2
Transition frequency fT (MHz)
nc
te
na
500
400
140
M
ain
Forward current transfer ratio hFE
e/
VCE = −10 V
fT I E
160
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
on
tin
ue
Base-emitter voltage VBE (V)
−200
Base current IB (µA)
− 0.01
−40
−50
−100
− 0.1
−120
−200
− 0.4
0
VCE(sat) IC
VCE = −5 V
−200
0
0
−12
IC VBE
−240
VCE = −5 V
Ta = 25°C
−350
−10
−50 µA
Collector-emitter voltage VCE (V)
IB VBE
−400
−20
Collector-emitter saturation voltage VCE(sat) (V)
40
−30
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0
0
Ambient temperature Ta (°C)
0
−250 µA
−20
40
0
−60
−1 000
0
0.1
1
10
Emitter current IE (mA)
SJC00047BED
100
8
IE = 0
f = 1 MHz
Ta = 25°C
7
6
5
4
3
2
1
0
−1
−10
−100
Collector-base voltage VCB (V)
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0709A
NF IE
NF IE
VCB = −5 V
R = 50 kΩ
18 g
Ta = 25°C
VCB = −5 V
f = 1 kHz
Rg = 2 kΩ
Ta = 25°C
hfe
16
14
12
f = 100 Hz
hoe (µS)
M
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sc te
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4
3
2
10
1 kHz
8
10
10 kHz
6
hie (kΩ)
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4
1
VCE = −5 V
f = 270 Hz
Ta = 25°C
100
h Parameter
Noise figure NF (dB)
5
Noise figure NF (dB)
h Parameter IE
20
6
2
0
0.01
0.1
1
0
0.1
10
Emitter current IE (mA)
Emitter current IE (mA)
h Parameter VCE
hfe
IE = 2 mA
f = 270 Hz
Ta = 25°C
hoe (µS)
10
hre (× 10−4)
hie (kΩ)
−10
−100
10
1
0.1
hre (× 10−4)
1
10
Emitter current IE (mA)
Pl
te
na
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Di
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on
tin
ue
Collector-emitter voltage VCE (V)
M
ain
h Parameter
100
1
−1
1
SJC00047BED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
pla d in
ea
ne clu
se
pla m d de
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tp t f
:// ol d d d nte inte llow
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m R ue ue yp typ r P
ico L d d e
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du
pa ou e pe
ct
d
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life
so ate
cy
nic st
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.co inf
sta
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.
n.
M
Di ain
sc te
on na
tin nc
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
M
ain
te
na
nc
e
/D
isc
on
tin
ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
