2SB1220GRL

2SB1220GRL

  • 厂商:

    NAIS(松下)

  • 封装:

    SC-85

  • 描述:

    2SB1220GRL

  • 数据手册
  • 价格&库存
2SB1220GRL 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1220G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SD1821G ■ Package • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. • Code SMini3-F2 • Marking Symbol: I • Pin Name 1. Base 2. Emitter 3. Collector d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open) VCEO −150 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −50 mA Peak collector current ICP −100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol tin Parameter Conditions Min Typ Max Unit VCEO IC = −100 µA, IB = 0 −150 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 V Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0 hFE VCE = −5 V, IC = −10 mA VCE(sat) IC = −30 mA, IB = −3 mA e/ Di sc on Collector-emitter voltage (Base open) nc Forward current transfer ratio * te na Collector-emitter saturation voltage Transition frequency VCB = −10 V, IE = 10 mA, f = 200 MHz fT Cob VCB = −10 V, IE = 0, f = 1 MHz Noixe voltage NV VCE = −10 V, IC = −1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT −1 µA 450  −1 V 200 MHz 4 pF 150 mV Pl M ain Collector output capacitance (Common base, input open circuited) 130 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S T hFE 130 to 220 185 to 330 260 to 450 Publication date: April 2007 SJC00354AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1220G PC  Ta IC  VCE Collector current IC (mA) 160 Ta = 25°C IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −80 −60 VCE = −5 V 25°C −100 −4 mA Ta = 75°C 80 80 120 0 160 Forward current transfer ratio hFE Ta = 75°C 25°C −25°C − 0.01 − 0.1 −1 −6 −8 −10 500 400 Ta = 75°C 300 25°C −25°C 200 100 ue −1 −10 Collector current IC (mA) tin on Di sc te na nc e/ IE = 0 f = 1 MHz Ta = 25°C M ain 6 4 Pl Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 8 2 0 −1 −10 −100 Collector-base voltage VCB (V) 2 0 −12 0 − 0.4 SJC00354AED −100 − 0.8 −1.2 −1.6 −2.0 Base-emitter voltage VBE (V) 250 VCE = −5 V 0 − 0.1 −100 Collector current IC (mA) 10 −10 hFE  IC −10 − 0.1 −4 600 IC / IB = 10 −1 −2 0 Collector-emitter voltage VCE (V) VCE(sat)  IC −100 −40 −20 Transition frequency fT (MHz) 40 −1 mA −60 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 0 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) −2 mA −20 40 0 −3 mA −40 −25°C −80 M Di ain sc te on na tin nc ue e/ d 120 −120 Collector current IC (mA) Collector power dissipation PC (mW) IC  VBE −100 200 fT  I E VCB = −10 V Ta = 25°C 200 150 100 50 0 0.1 1 10 Emitter current IE (mA) 100 1.25 ±0.10 1 (0.65) ±0.050 +0.05 3 2 (0.65) 0.13 −0.02 +0.05 1.30 ±0.10 0 to 0.10 ±0.10 ±0.10 pla in ea 0.90 2.10 ne clu se d pla m d m es f ht visi n a a o tp t f e :// ol d d d inte inte llow ww lo is is na n i(5°) w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P 0.425 ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy n s cle i (0.49) c.c t in o. for sta jp/ m ge en at . / ion . ed inu 0.30 −0.02 (0.89) on t (5°) Di sc ce / en an 2.00 ±0.20 Pl ain t M M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 Unit: mm Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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