2SB13980QA

2SB13980QA

  • 厂商:

    NAIS(松下)

  • 封装:

    SIP3

  • 描述:

    2SB13980QA

  • 数据手册
  • 价格&库存
2SB13980QA 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1398 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 M Di ain sc te on na tin nc ue e/ d 0.7 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing supply with the radial taping Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −30 V Collector-emitter voltage (Base open) VCEO −25 V VEBO −7 V Collector current IC −5 A Peak collector current ICP −8 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.10 –0.05 2.5±0.5 1 14.5±0.5 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. (1.0) 0.65 max. ■ Absolute Maximum Ratings Ta = 25°C Emitter-base voltage (Collector open) (0.5) (1.0) (0.2) 4.5±0.1 ■ Features 2.5±0.1 (0.8) 1.05±0.05 0.45+0.10 –0.05 2.5±0.5 2 3 1: Emitter 2: Collector 3: Base MT-2-A1 Package cm2 Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion Parameter Symbol Collector-emitter voltage (Base open) ue ■ Electrical Characteristics Ta = 25°C ± 3°C tin VCEO Conditions −25 −7 VEBO IE = −10 µA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 Forward current transfer ratio *1, 2 hFE VCE = −2 V, IC = −2 A VCE(sat) IC = −3 A, IB = − 0.1 A nc e/ Di sc on Emitter-base voltage (Collector open) te na Collector-emitter saturation voltage *1 Transition frequency VCB = −6 V, IE = 50 mA, f = 200 MHz fT M ain Collector output capacitance (Common base, input open circuited) VCB = −20 V, IE = 0, f = 1 MHz Cob Min IC = −1 mA, IB = 0 Typ 90 Max Unit V V −100 nA −100 nA 205  −1 120 V MHz 85 pF Pl Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank P Q hFE 90 to 135 120 to 205 Publication date: January 2003 SJC00082BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1398 PC  Ta IC  VCE Ta = 25°C IB = −50 mA Collector current IC (A) −5 0.8 −10 −45 mA −40 mA −35 mA −30 mA −4 −25 mA VCE = −2 V −8 Collector current IC (A) Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 1.0 IC  VBE −6 25°C Ta = 100°C −6 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) 1.2 0.6 0.4 −10 mA 40 60 0 80 100 120 140 160 −3 −4 Collector-emitter saturation voltage VCE(sat) (V) 300 Ta = 100°C 25°C −25°C − 0.1 −1 −1 Ta = 100°C 25°C −25°C ue − 0.1 te na Pl 120 80 40 0 −1 −10 −100 Collector-base voltage VCB (V) 2 −1 Collector current IC (A) tin on Di sc nc e/ IE = 0 f = 1 MHz Ta = 25°C M ain Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 160 0 − 0.4 − 0.8 SJC00082BED −10 −1.2 −1.6 −2.0 Base-emitter voltage VBE (V) fT  I E 240 IC / IB = 30 −10 − 0.01 − 0.01 −10 Collector current IC (A) 240 0 −6 − 0.1 100 200 −5 VCE(sat)  IC 400 0 − 0.01 −2 −100 VCE = −2 V 200 −1 0 Collector-emitter voltage VCE (V) hFE  IC 500 −2 −5 mA Transition frequency fT (MHz) 20 −4 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 0 Ambient temperature Ta (°C) Forward current transfer ratio hFE −15 mA −2 −1 0.2 0 −20 mA −3 −25°C VCB = −6 V Ta = 25°C 200 160 120 80 40 0 1 10 100 Emitter current IE (mA) 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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