This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1398
Silicon PNP epitaxial planar type
For low-frequency power amplification
Unit: mm
6.9±0.1
4.0
M
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0.7
• Low collector-emitter saturation voltage VCE(sat)
• Large collector current IC
• Allowing supply with the radial taping
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−30
V
Collector-emitter voltage (Base open)
VCEO
−25
V
VEBO
−7
V
Collector current
IC
−5
A
Peak collector current
ICP
−8
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.45+0.10
–0.05
2.5±0.5
1
14.5±0.5
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■ Absolute Maximum Ratings Ta = 25°C
Emitter-base voltage (Collector open)
(0.5)
(1.0)
(0.2)
4.5±0.1
■ Features
2.5±0.1
(0.8)
1.05±0.05
0.45+0.10
–0.05
2.5±0.5
2
3
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
cm2
Note) *: Print circuit board: Copper foil area of 1
or more, and the board
thickness of 1.7 mm for the collector portion
Parameter
Symbol
Collector-emitter voltage (Base open)
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
tin
VCEO
Conditions
−25
−7
VEBO
IE = −10 µA, IC = 0
Collector-base cutoff current (Emitter open)
ICBO
VCB = −10 V, IE = 0
Emitter-base cutoff current (Collector open)
IEBO
VEB = −5 V, IC = 0
Forward current transfer ratio *1, 2
hFE
VCE = −2 V, IC = −2 A
VCE(sat)
IC = −3 A, IB = − 0.1 A
nc
e/
Di
sc
on
Emitter-base voltage (Collector open)
te
na
Collector-emitter saturation voltage
*1
Transition frequency
VCB = −6 V, IE = 50 mA, f = 200 MHz
fT
M
ain
Collector output capacitance
(Common base, input open circuited)
VCB = −20 V, IE = 0, f = 1 MHz
Cob
Min
IC = −1 mA, IB = 0
Typ
90
Max
Unit
V
V
−100
nA
−100
nA
205
−1
120
V
MHz
85
pF
Pl
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
P
Q
hFE
90 to 135
120 to 205
Publication date: January 2003
SJC00082BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1398
PC Ta
IC VCE
Ta = 25°C
IB = −50 mA
Collector current IC (A)
−5
0.8
−10
−45 mA
−40 mA
−35 mA
−30 mA
−4
−25 mA
VCE = −2 V
−8
Collector current IC (A)
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness
1.0
IC VBE
−6
25°C
Ta = 100°C
−6
M
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Collector power dissipation PC (W)
1.2
0.6
0.4
−10 mA
40
60
0
80 100 120 140 160
−3
−4
Collector-emitter saturation voltage VCE(sat) (V)
300
Ta = 100°C
25°C
−25°C
− 0.1
−1
−1
Ta = 100°C
25°C
−25°C
ue
− 0.1
te
na
Pl
120
80
40
0
−1
−10
−100
Collector-base voltage VCB (V)
2
−1
Collector current IC (A)
tin
on
Di
sc
nc
e/
IE = 0
f = 1 MHz
Ta = 25°C
M
ain
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
160
0
− 0.4
− 0.8
SJC00082BED
−10
−1.2
−1.6
−2.0
Base-emitter voltage VBE (V)
fT I E
240
IC / IB = 30
−10
− 0.01
− 0.01
−10
Collector current IC (A)
240
0
−6
− 0.1
100
200
−5
VCE(sat) IC
400
0
− 0.01
−2
−100
VCE = −2 V
200
−1
0
Collector-emitter voltage VCE (V)
hFE IC
500
−2
−5 mA
Transition frequency fT (MHz)
20
−4
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Ambient temperature Ta (°C)
Forward current transfer ratio hFE
−15 mA
−2
−1
0.2
0
−20 mA
−3
−25°C
VCB = −6 V
Ta = 25°C
200
160
120
80
40
0
1
10
100
Emitter current IE (mA)
1 000
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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pla d in
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pla m d de
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tp t f
:// ol d d d nte inte llow
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m R ue ue yp typ r P
ico L d d e
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n. ab typ ty
du
pa ou e pe
ct
d
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.co inf
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M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
M
ain
te
na
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e
/D
isc
on
tin
ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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